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PMOS logic
Known as:
PMOS
P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other…
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Related topics
Related topics
23 relations
CMOS
Central processing unit
Depletion-load NMOS logic
EPROM
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Papers overview
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2012
2012
The influence of clock-gating on NBTI-induced delay degradation
J. Pachito
,
C. V. Martins
,
J. Semião
,
Marcelino B. Santos
,
I. Teixeira
,
João Paulo Teixeira
IEEE International Symposium on On-Line Testing…
2012
Corpus ID: 5183939
This paper presents an analysis of the implications of clock gating techniques on the increase of aging degradations in new node…
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2010
2010
Multi-corner, energy-delay optimized, NBTI-aware flip-flop design
H. Abrishami
,
S. Hatami
,
Massoud Pedram
IEEE International Symposium on Quality…
2010
Corpus ID: 13000220
With the CMOS transistors being scaled to sub 45nm and lower, Negative Bias Temperature Instability (NBTI) has become a major…
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2010
2010
Post-placement STI well width adjusting by geometric programming for device mobility enhancement in critical path
Jing Li
,
Bo Yang
,
Qing Dong
,
S. Nakatake
Proceedings of IEEE International Symposium on…
2010
Corpus ID: 8549450
Size of STI wells is another significant factor to affect the stress magnitude(device mobility) besides size of transistor active…
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2007
2007
Ultra-low power subthreshold current-mode logic utilising PMOS load device
A. Tajalli
,
E. Vittoz
,
Y. Leblebici
,
E. J. Brauer
2007
Corpus ID: 30575165
A novel approach for implementing MOS current-mode logic (MCML) circuits that can operate with ultra low bias currents is…
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2005
2005
Low power SRAM techniques for handheld products
R. Islam
,
A. Brand
,
Dave Lippincott
ISLPED '05. Proceedings of the International…
2005
Corpus ID: 21532979
SRAM leakage constitutes a significant portion of the standby power budget of modern SoC products for handheld applications such…
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2005
2005
A 13.56 MHz CMOS RF Identification Passive Tag LSI with Ferroelectric Random Access Memory
S. Masui
,
Toshiyuki Teramoto
IEICE transactions on electronics
2005
Corpus ID: 35152413
A radio frequency identification tag LSI operating with the carrier frequency of 13.56MHz as well as storing nonvolatile…
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Highly Cited
2003
Highly Cited
2003
Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions
Niu Jin
,
Sung-Yong Chung
,
+12 authors
D. Simons
2003
Corpus ID: 18791228
Si/SiGe resonant interband tunnel diodes (RITDs) employing /spl delta/-doping spikes that demonstrate negative differential…
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Highly Cited
2000
Highly Cited
2000
A CMOS charge pump for low voltage operation
Y. Moisiadis
,
I. Bouras
,
A. Arapoyanni
IEEE International Symposium on Circuits and…
2000
Corpus ID: 17976089
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies…
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2000
2000
A 12.5 GHz back-gate tuned CMOS voltage controlled oscillator
A. Mostafa
,
M. El-Gamal
ICECS . 7th IEEE International Conference on…
2000
Corpus ID: 57490309
This paper presents the design and measurements of a 12.5 GHz CMOS VCO. The circuit is an LC oscillator using an integrated…
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1990
1990
A half-micron SRAM cell using a double-gated self-aligned polysilicon PMOS thin film transistor (TFT) load
A. Adan
,
K. Suzuki
,
H. Shibayama
,
R. Miyake
Digest of Technical Papers. Symposium on VLSI…
1990
Corpus ID: 38474087
An SRAM cell structure using stacked double-gated, self-aligned polysilicon PMOS thin-film transistors (TFT) is described. This…
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