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PMOS logic

Known as: PMOS 
P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other… 
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Related topics

Related topics

23 relations
CMOSCentral processing unitDepletion-load NMOS logicEPROM

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2011
Highly Cited
2011
Low‐voltage bulk‐driven input stage with improved transconductance
A low‐voltage input stage constructed from bulk‐driven PMOS transistors is proposed in this paper. It is based on a partial… 
Highly Cited
2009
Highly Cited
2009
A 5 GHz Differential Colpitts CMOS VCO Using the Bottom PMOS Cross-Coupled Current Source
A low phase noise differential Colpitts voltage-controlled oscillator (VCO) with the bottom series PMOS cross-coupled current… 
Highly Cited
2007
Highly Cited
2007
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates… 
Highly Cited
2006
Highly Cited
2006
Active-matrix OLED on bendable metal foil
This brief reports a flexible active-matrix organic light-emitting diode display based on a poly-Si thin-film transistor (TFT… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2000
Highly Cited
2000
A CMOS charge pump for low voltage operation
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies… 
Highly Cited
1998
Highly Cited
1998
A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances
A 1.4-GHz LC voltage-controlled oscillator has been implemented in a MOSIS 0.5-/spl mu/m CMOS process. Complementary cross… 
Highly Cited
1994
Highly Cited
1994
A 13.4-GHz CMOS frequency divider
This paper describes the design ofa 13.4 GHz 1/2-frequency divider fabricated in a partially-scaled 0.1 /spl mu/m bulk CMOS… 
Highly Cited
1992
Highly Cited
1992
Low-temperature (<or=550 degrees C) fabrication of poly-Si thin-film transistors
High performance n- and p-channel thin-film transistors (TFTs) have been fabricated in polycrystalline silicon films using a self… 
Highly Cited
1991
Highly Cited
1991
Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements… 
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