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PMOS logic
Known as:
PMOS
P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other…
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Related topics
Related topics
23 relations
CMOS
Central processing unit
Depletion-load NMOS logic
EPROM
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Papers overview
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Highly Cited
2009
Highly Cited
2009
A 5 GHz Differential Colpitts CMOS VCO Using the Bottom PMOS Cross-Coupled Current Source
Jian‐An Hou
,
Yeong-Her Wang
IEEE Microwave and Wireless Components Letters
2009
Corpus ID: 44942905
A low phase noise differential Colpitts voltage-controlled oscillator (VCO) with the bottom series PMOS cross-coupled current…
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2009
2009
Design of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners
Pui-in Mak
,
R. Martins
IEEE Transactions on Circuits and Systems Part 1…
2009
Corpus ID: 11495056
This paper presents an electrostatic discharge (ESD)-protected ultra-wideband (UWB) low-noise amplifier (LNA) for full-band (170…
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Highly Cited
2007
Highly Cited
2007
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations
D. Giot
,
P. Roche
,
G. Gasiot
,
R. Harboe-Sørensen
IEEE Transactions on Nuclear Science
2007
Corpus ID: 43348618
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates…
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Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
Yu-Chih Tseng
,
Peiqi Xuan
,
+4 authors
H. Dai
2004
Corpus ID: 1560670
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS…
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Highly Cited
2004
Highly Cited
2004
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
P. Chidambaram
,
Brian A. Smith
,
+11 authors
D. T. Grider
Digest of Technical Papers. Symposium on VLSI…
2004
Corpus ID: 20198429
Results from the best reported PMOS transistor at a 37 nm gate length (Lg) built on a process with a recessed SiGe epitaxial…
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Highly Cited
2000
Highly Cited
2000
A CMOS charge pump for low voltage operation
Y. Moisiadis
,
I. Bouras
,
A. Arapoyanni
IEEE International Symposium on Circuits and…
2000
Corpus ID: 17976089
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies…
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Highly Cited
2000
Highly Cited
2000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
B. Lee
,
R. Choi
,
+7 authors
J. Lee
International Electron Devices Meeting…
2000
Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films…
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Highly Cited
1998
Highly Cited
1998
A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances
Tamara I. Ahrens
,
T. Lee
Proceedings / International Symposium on Low…
1998
Corpus ID: 8572741
A 1.4-GHz LC voltage-controlled oscillator has been implemented in a MOSIS 0.5-/spl mu/m CMOS process. Complementary cross…
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Highly Cited
1994
Highly Cited
1994
A 13.4-GHz CMOS frequency divider
B. Razavi
,
Kwing F. Lee
,
R. Yan
IEEE International Solid-State Circuits…
1994
Corpus ID: 206995108
This paper describes the design ofa 13.4 GHz 1/2-frequency divider fabricated in a partially-scaled 0.1 /spl mu/m bulk CMOS…
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Highly Cited
1991
Highly Cited
1991
Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
A. Terao
,
D. Flandre
,
E. Lora-Tamayo
,
F. van de Wiele
IEEE Electron Device Letters
1991
Corpus ID: 43449878
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements…
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