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PMOS logic

Known as: PMOS 
P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other… 
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Related topics

Related topics

23 relations
CMOSCentral processing unitDepletion-load NMOS logicEPROM

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
A 5 GHz Differential Colpitts CMOS VCO Using the Bottom PMOS Cross-Coupled Current Source
A low phase noise differential Colpitts voltage-controlled oscillator (VCO) with the bottom series PMOS cross-coupled current… 
2009
2009
Design of an ESD-Protected Ultra-Wideband LNA in Nanoscale CMOS for Full-Band Mobile TV Tuners
This paper presents an electrostatic discharge (ESD)-protected ultra-wideband (UWB) low-noise amplifier (LNA) for full-band (170… 
Highly Cited
2007
Highly Cited
2007
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
Results from the best reported PMOS transistor at a 37 nm gate length (Lg) built on a process with a recessed SiGe epitaxial… 
Highly Cited
2000
Highly Cited
2000
A CMOS charge pump for low voltage operation
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies… 
Highly Cited
2000
Highly Cited
2000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
  • B. LeeR. Choi J. Lee
  • International Electron Devices Meeting…
  • 2000
  • Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films… 
Highly Cited
1998
Highly Cited
1998
A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances
A 1.4-GHz LC voltage-controlled oscillator has been implemented in a MOSIS 0.5-/spl mu/m CMOS process. Complementary cross… 
Highly Cited
1994
Highly Cited
1994
A 13.4-GHz CMOS frequency divider
This paper describes the design ofa 13.4 GHz 1/2-frequency divider fabricated in a partially-scaled 0.1 /spl mu/m bulk CMOS… 
Highly Cited
1991
Highly Cited
1991
Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements… 
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