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PMOS logic

Known as: PMOS 
P-type metal-oxide-semiconductor logic uses p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other… 
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Papers overview

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Highly Cited
2009
Highly Cited
2009
A low phase noise differential Colpitts voltage-controlled oscillator (VCO) with the bottom series PMOS cross-coupled current… 
2009
2009
This paper presents an electrostatic discharge (ESD)-protected ultra-wideband (UWB) low-noise amplifier (LNA) for full-band (170… 
Highly Cited
2007
Highly Cited
2007
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates… 
Highly Cited
2004
Highly Cited
2004
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Results from the best reported PMOS transistor at a 37 nm gate length (Lg) built on a process with a recessed SiGe epitaxial… 
Highly Cited
2000
Highly Cited
2000
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies… 
Highly Cited
2000
Highly Cited
2000
  • B. LeeR. Choi J. Lee
  • 2000
  • Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films… 
Highly Cited
1998
Highly Cited
1998
A 1.4-GHz LC voltage-controlled oscillator has been implemented in a MOSIS 0.5-/spl mu/m CMOS process. Complementary cross… 
Highly Cited
1994
Highly Cited
1994
This paper describes the design ofa 13.4 GHz 1/2-frequency divider fabricated in a partially-scaled 0.1 /spl mu/m bulk CMOS… 
Highly Cited
1991
Highly Cited
1991
Accumulation-mode PMOS transistors on SOI (silicon on insulator) are characterized by several conduction mechanisms. Measurements…