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EPROM

Known as: Uv eprom, Erasable programmable read only memory, EPROM programmer 
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched… 
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Related topics

Related topics

48 relations
Answer to resetAtmel AVRBIOSCambridge Z88

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
High-Efficiency Differential RF Front-End for a Gen2 RFID Tag
This brief proposes the analysis and design of a high-efficiency differential radio-frequency (RF) front-end for electronic… 
Review
2005
Review
2005
Mapping structures for flash memories: techniques and open problems
Flash memory is a type of electrically erasable programmable read-only memory (EEPROM). Because flash memories are nonvolatile… 
Highly Cited
2001
Highly Cited
2001
Secure configuration of Field Programmable Gate arrays
Although SRAM programmed Field Programmable Gate Arrays (FPGA's) have come to dominate the industry due to their density and… 
2000
2000
An antifuse EPROM circuitry scheme for field-programmable repair in DRAM
An antifuse EPROM and 3-V programming circuit has been demonstrated in an existing 0.22-/spl mu/m DRAM process technology and is… 
1998
1998
MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/
In this work, we propose a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device. The device… 
Highly Cited
1997
Highly Cited
1997
Circuit techniques for 1.5-V power supply flash memory
We describe circuit techniques for a Flash memory which operates with a V/sub DD/ of 1.5 V. For the interface between the… 
1997
1997
Flight-Determined Subsonic Longitudinal Stability and Control Derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) With Thrust Vectoring
The subsonic longitudinal stability and control derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) are… 
1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this… 
1989
1989
Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides
The gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown (TDDB) in nitrided and reoxidized… 
Highly Cited
1986
Highly Cited
1986
A novel high-speed, 5-volt programming EPROM structure with source-side injection
A novel source-side injection EPROM (SIEPROM) structure [1] capable of 5-volt only, high speed programming is described. The cell… 
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