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EPROM
Known as:
Uv eprom
, Erasable programmable read only memory
, EPROM programmer
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An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched…
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Related topics
Related topics
48 relations
Answer to reset
Atmel AVR
BIOS
Cambridge Z88
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Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
MEI: An efficient algorithm for mining erasable itemsets
Tuong Le
,
Bay Vo
Engineering applications of artificial…
2014
Corpus ID: 18736704
Highly Cited
2007
Highly Cited
2007
Forensic Data Recovery from Flash Memory
Marcel Breeuwsma
,
M.C.J. de Jongh
,
C. Klaver
,
R. V. D. Knijff
,
Mark Roeloffs
2007
Corpus ID: 96097
Current forensic tools for examination of embedded systems like mobile phones and PDA’s mostly perform data extraction on a…
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Highly Cited
2007
Highly Cited
2007
Position Measurement in Industrial Drives by Means of Low-Cost Resolver-to-Digital Converter
C. Attaianese
,
G. Tomasso
IEEE Transactions on Instrumentation and…
2007
Corpus ID: 10361990
A fully integrated board for resolver-to-digital conversion is proposed in this paper. It is based on a combined analog/digital…
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Review
2005
Review
2005
Algorithms and data structures for flash memories
E. Gal
,
Sivan Toledo
CSUR
2005
Corpus ID: 1307704
Flash memory is a type of electrically-erasable programmable read-only memory (EEPROM). Because flash memories are nonvolatile…
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Highly Cited
2002
Highly Cited
2002
Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation
G. Cellere
,
A. Paccagnella
,
+4 authors
A. Modelli
2002
Corpus ID: 11055733
We are presenting new data on the charge loss in large floating gate (FG) memory arrays subjected to heavy ion irradiation…
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Review
1997
Review
1997
Flash memory cells-an overview
P. Pavan
,
R. Bez
,
P. Olivo
,
E. Zanoni
Proceedings of the IEEE
1997
Corpus ID: 13268141
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and charge-injection mechanisms that…
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Highly Cited
1997
Highly Cited
1997
Circuit techniques for 1.5-V power supply flash memory
N. Otsuka
,
M. Horowitz
IEEE J. Solid State Circuits
1997
Corpus ID: 16682074
We describe circuit techniques for a Flash memory which operates with a V/sub DD/ of 1.5 V. For the interface between the…
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Review
1993
Review
1993
Reliability issues of flash memory cells
S. Aritome
,
R. Shirota
,
G. Hemink
,
T. Endoh
,
F. Masuoka
Proceedings of the IEEE
1993
Corpus ID: 15440182
Reliability issues for flash electrically erasable programmable read-only memories are reviewed. The reliability of both the…
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Highly Cited
1987
Highly Cited
1987
New ultra high density EPROM and flash EEPROM with NAND structure cell
F. Masuoka
,
M. Momodomi
,
Y. Iwata
,
R. Shirota
International Electron Devices Meeting
1987
Corpus ID: 1957483
In order to realize ultra high density EPROM and Flash EEPROM, a NAND structure cell is proposed. This new structure is able to…
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Highly Cited
1984
Highly Cited
1984
Enhancing Self-Efficacy and Achievement Through Rewards and Goals: Motivational and Informational Effects
D. Schunk
1984
Corpus ID: 12909043
This experiment compared the effects of performance-contingent rewards and proximal goals on children's task motivation, self…
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