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EPROM
Known as:
Uv eprom
, Erasable programmable read only memory
, EPROM programmer
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An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched…
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Related topics
Related topics
48 relations
Answer to reset
Atmel AVR
BIOS
Cambridge Z88
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Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2006
2006
Edge Profile Effect of Tunnel Oxide on Erase Threshold-Voltage Distributions in Flash Memory Cells
Bomsoo Kim
,
W. Kwon
,
+4 authors
D.M. Kim
IEEE Transactions on Electron Devices
2006
Corpus ID: 17433906
The erase threshold-voltage (VT) distribution in Flash electrically erasable programmable read-only memory cells was investigated…
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2000
2000
Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory
L. Scheick
,
Peter J. McNulty
,
David R. Roth
2000
Corpus ID: 55094338
A method is described for measuring the sensitive volume of the oxide which makes up the collection region for erasure…
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1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
I. Kelly
,
D. Keating
International Journal of Systems Science
1998
Corpus ID: 1088130
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the…
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1998
1998
Improving radiation hardness of EEPROM/flash cell by N2O annealing
Tiao-Yuan Huang
,
Fuh-Cheng Jong
,
+5 authors
K. Chin
IEEE Electron Device Letters
1998
Corpus ID: 29284030
The effects of an N/sub 2/O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory…
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Highly Cited
1997
Highly Cited
1997
Circuit techniques for 1.5-V power supply flash memory
N. Otsuka
,
M. Horowitz
IEEE J. Solid State Circuits
1997
Corpus ID: 16682074
We describe circuit techniques for a Flash memory which operates with a V/sub DD/ of 1.5 V. For the interface between the…
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1995
1995
Erase Source Bias on Flash EPROM Device Reliability
K. T. San
,
Ç. Kaya
,
T. Ma
1995
Corpus ID: 62501019
This paper is concerned with the effects of the source bias during the erase operation on the reliability of Flash EPROM devices…
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1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
T. Chao
,
Chung-Len Lee
,
T. Lei
1991
Corpus ID: 93957758
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this…
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Highly Cited
1986
Highly Cited
1986
A novel high-speed, 5-volt programming EPROM structure with source-side injection
A. T. Wu
,
T. Chan
,
P. Ko
,
Chenming Hu
International Electron Devices Meeting
1986
Corpus ID: 20627577
A novel source-side injection EPROM (SIEPROM) structure [1] capable of 5-volt only, high speed programming is described. The cell…
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1983
1983
New EPROM Data-Loss Mechanisms
Neal R. Mielke
IEEE International Reliability Physics Symposium
1983
Corpus ID: 28773612
Data-loss mechanisms in present-generation EPROMs have been studied. Defect-related data loss is primarily due to interpoly-oxide…
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1978
1978
Accelerated Testing in FAMOS Devices - 8K EPROM
R. Alexander
IEEE International Reliability Physics Symposium
1978
Corpus ID: 37026670
The results of multi-temperature operating life and charge retention bake tests of 8K EPROM FAMOS devices indicate that there is…
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