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EPROM

Known as: Uv eprom, Erasable programmable read only memory, EPROM programmer 
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched… 
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Related topics

Related topics

48 relations
Answer to resetAtmel AVRBIOSCambridge Z88

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2000
2000
Why Aren't Aid Organizations Better Learners?
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the… 
1998
1998
MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/
In this work, we propose a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device. The device… 
1998
1998
Improving radiation hardness of EEPROM/flash cell by N2O annealing
The effects of an N/sub 2/O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory… 
Highly Cited
1997
Highly Cited
1997
Circuit techniques for 1.5-V power supply flash memory
We describe circuit techniques for a Flash memory which operates with a V/sub DD/ of 1.5 V. For the interface between the… 
1997
1997
Flight-Determined Subsonic Longitudinal Stability and Control Derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) With Thrust Vectoring
The subsonic longitudinal stability and control derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) are… 
1995
1995
Erase Source Bias on Flash EPROM Device Reliability
This paper is concerned with the effects of the source bias during the erase operation on the reliability of Flash EPROM devices… 
1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this… 
1989
1989
Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides
The gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown (TDDB) in nitrided and reoxidized… 
Highly Cited
1986
Highly Cited
1986
A novel high-speed, 5-volt programming EPROM structure with source-side injection
A novel source-side injection EPROM (SIEPROM) structure [1] capable of 5-volt only, high speed programming is described. The cell… 
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