Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 228,364,174 papers from all fields of science
Search
Sign In
Create Free Account
EPROM
Known as:
Uv eprom
, Erasable programmable read only memory
, EPROM programmer
Expand
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of memory chip that retains its data when its power supply is switched…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
48 relations
Answer to reset
Atmel AVR
BIOS
Cambridge Z88
Expand
Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2000
2000
Why Aren't Aid Organizations Better Learners?
E. Berg
2000
Corpus ID: 155621237
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
I. Kelly
,
D. Keating
International Journal of Systems Science
1998
Corpus ID: 1088130
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the…
Expand
1998
1998
MOS memory using germanium nanocrystals formed by thermal oxidation of Si/sub 1-x/Ge/sub x/
Y. King
,
T. King
,
C. Hu
1998
Corpus ID: 15622367
In this work, we propose a novel technique of fabricating germanium nanocrystal quasi-nonvolatile memory device. The device…
Expand
1998
1998
Improving radiation hardness of EEPROM/flash cell by N2O annealing
Tiao-Yuan Huang
,
Fuh-Cheng Jong
,
+5 authors
K. Chin
IEEE Electron Device Letters
1998
Corpus ID: 29284030
The effects of an N/sub 2/O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory…
Expand
Highly Cited
1997
Highly Cited
1997
Circuit techniques for 1.5-V power supply flash memory
N. Otsuka
,
M. Horowitz
IEEE J. Solid State Circuits
1997
Corpus ID: 16682074
We describe circuit techniques for a Flash memory which operates with a V/sub DD/ of 1.5 V. For the interface between the…
Expand
1997
1997
Flight-Determined Subsonic Longitudinal Stability and Control Derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) With Thrust Vectoring
K. Iliff
,
K. Wang
1997
Corpus ID: 109422168
The subsonic longitudinal stability and control derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) are…
Expand
1995
1995
Erase Source Bias on Flash EPROM Device Reliability
K. T. San
,
Ç. Kaya
,
T. Ma
1995
Corpus ID: 62501019
This paper is concerned with the effects of the source bias during the erase operation on the reliability of Flash EPROM devices…
Expand
1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
T. Chao
,
Chung-Len Lee
,
T. Lei
1991
Corpus ID: 93957758
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this…
Expand
1989
1989
Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides
A. Wu
,
V. Murali
,
J. Nulman
,
B. Triplett
,
D. Fraser
,
M. Garner
IEEE Electron Device Letters
1989
Corpus ID: 27989413
The gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown (TDDB) in nitrided and reoxidized…
Expand
Highly Cited
1986
Highly Cited
1986
A novel high-speed, 5-volt programming EPROM structure with source-side injection
A. T. Wu
,
T. Chan
,
P. Ko
,
Chenming Hu
International Electron Devices Meeting
1986
Corpus ID: 20627577
A novel source-side injection EPROM (SIEPROM) structure [1] capable of 5-volt only, high speed programming is described. The cell…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE