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Reactive-ion etching

Known as: RIE, Reactive ion etch, Reactive ion etching 
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than… 
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Related topics

Related topics

13 relations
Antenna effectCapacitively coupled plasmaDeep reactive-ion etchingDry etching

Broader (2)

Etching (microfabrication)Semiconductor device fabrication

Papers overview

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2006
2006
Reactive ion etching of fluorine containing photoresist
Photoresist are commonly used in semiconductor processing as soft masks for pattern transfer into multilayer stacks using… 
Highly Cited
2006
Highly Cited
2006
Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography
Highly Cited
2005
Highly Cited
2005
Electron beam lithography patterning of sub-10 nm line using hydrogen silsesquioxane for nanoscale device applications
We investigated novel patterning techniques to produce ultrafine patterns for nanoscale devices. Hydrogen silsesquioxane (HSQ… 
2004
2004
Monolithic suspended optical waveguides for InP MEMS
We present a novel waveguide design for InP microelecromechanical systems. The substrate is removed from underneath the waveguide… 
Highly Cited
2002
Highly Cited
2002
Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching
We report a novel method of fabricating gallium nitride (GaN) nanorods of controllable dimension and density from GaN epitaxial… 
1996
1996
Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers
Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral… 
1994
1994
Reactive ion etching of microlens arrays into fused silica
Microlens arrays made in photoresist can be transferred into fused silica substrates by reactive ion etching herby, the etch… 
1990
1990
Damage To Gate Oxides In Reactive Ion Etching
The damage incurred during reactive ion etching is studied by using MOS capacitors with various sizes of surface metal pads… 
Highly Cited
1988
Highly Cited
1988
Effect of Potential Field on Ion Deflection and Shape Evolution of Trenches during Plasma‐Assisted Etching
Modele mathematique pour etudier l'evolution de la forme des tranchees au cours de la gravure assistee par plasma 
Highly Cited
1982
Highly Cited
1982
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall… 
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