Reactive-ion etching

Known as: RIE, Reactive ion etch, Reactive ion etching 
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than… (More)
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Papers overview

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2014
2014
This letter introduces a novel inductively coupled plasma-reactive ion etching (ICP-RIE) technique based on a BCl3/SiCl4/Ar… (More)
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2011
2011
We report on the systematic studies of reactive-ion etching (RIE) conditions for zinc oxide (ZnO) films with methane and hydrogen… (More)
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2009
2009
Paper presents a dry release method for beam structures of radio frequency microelectromechanical systems (RF MEMS) switches. In… (More)
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2009
2009
In this paper we have investigated the damage to the surfaces after plasma etching of silicon and silicon dioxide. Sources of… (More)
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2002
2002
The reactive ion etching of quartz and Pyrex substrates was carried out using CF 4 /Ar and CF4 /O2 gas mixtures in a combined… (More)
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Highly Cited
2002
Highly Cited
2002
Very deep trenches (up to 200 pm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based… (More)
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1999
1999
We have studied reactive ion etching of Si r _ xGex alloys with x(0.15 and Ge in HBr plasmas. The etch rate of SiGe increases… (More)
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1999
1999
A new algorithm that determines the evolution of a surface eroding under reactive-ion etching is presented. The surface motion is… (More)
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Review
1997
Review
1997
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important… (More)
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1993
1993
This paper describes the development of real-time control technology for the improvement of manufacturing characteristics of… (More)
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