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Reactive-ion etching
Known as:
RIE
, Reactive ion etch
, Reactive ion etching
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than…
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Related topics
Related topics
13 relations
Antenna effect
Capacitively coupled plasma
Deep reactive-ion etching
Dry etching
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Broader (2)
Etching (microfabrication)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2006
2006
Reactive ion etching of fluorine containing photoresist
K. Patel
,
Victor Q. Pham
,
Wenjie Li
,
M. Khojasteh
,
P. R. Varanasi
SPIE Advanced Lithography
2006
Corpus ID: 135944472
Photoresist are commonly used in semiconductor processing as soft masks for pattern transfer into multilayer stacks using…
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Highly Cited
2006
Highly Cited
2006
Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography
V. Gowrishankar
,
N. Miller
,
+5 authors
C. Hawker
2006
Corpus ID: 13207065
Highly Cited
2002
Highly Cited
2002
Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching
Chang-Chin Yu
,
C. Chu
,
+4 authors
Shing-chung Wang
2002
Corpus ID: 54724784
We report a novel method of fabricating gallium nitride (GaN) nanorods of controllable dimension and density from GaN epitaxial…
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2001
2001
Indirect adaptive control of reactive ion etching using neural networks
D. Stokes
,
G. May
IEEE Trans. Robotics Autom.
2001
Corpus ID: 27601811
This paper explores the use of neural networks for real-time, model-based feedback control of reactive ion etching (RIE). This…
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1996
1996
Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers
G.M. Smith
,
J. S. Hughes
,
+4 authors
J. Coleman
IEEE Photonics Technology Letters
1996
Corpus ID: 33793764
Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral…
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1990
1990
Damage To Gate Oxides In Reactive Ion Etching
I. Wu
,
R. Bruce
,
M. Koyanagi
,
T. Huang
Other Conferences
1990
Corpus ID: 137632567
The damage incurred during reactive ion etching is studied by using MOS capacitors with various sizes of surface metal pads…
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Highly Cited
1988
Highly Cited
1988
Effect of Potential Field on Ion Deflection and Shape Evolution of Trenches during Plasma‐Assisted Etching
D. J. Economou
,
R. Alkire
1988
Corpus ID: 98401495
Modele mathematique pour etudier l'evolution de la forme des tranchees au cours de la gravure assistee par plasma
1984
1984
Citizenship and the Critical Role of the Social Studies. NCSS Bulletin No. 72.
W. Parker
,
J. Jarolímek
1984
Corpus ID: 140920641
DOCUMENT RESUME-
Highly Cited
1982
Highly Cited
1982
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology
P. J. Tsang
,
S. Ogura
,
W. Walker
,
J. Shepard
,
D. Critchlow
IEEE Transactions on Electron Devices
1982
Corpus ID: 27860057
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2sidewall…
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Highly Cited
1964
Highly Cited
1964
Polymyxa betae n.sp., ein Parasit in den Wurzeln von Beta vulgaris Tournefort, besonders während der Jugendentwicklung der Zuckerrübe
B. Keskin
Archiv für Mikrobiologie
1964
Corpus ID: 31158352
Zusammenfassung1.Aus den Wurzeln junger Zuckerrübenpflanzen wurde ein Pilz aus der Familie der Plasmodiophoraceae isoliert und…
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