Skip to search formSkip to main contentSkip to account menu

Dry etching

Known as: Dry-etch 
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of… 
Wikipedia (opens in a new tab)

Related topics

Related topics

12 relations

Broader (1)

Etching (microfabrication)
Isotropic etchingMicroelectromechanical systemsPlasma ashingPlasma etcher

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Review
2016
Review
2016
High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation
Resonant tunnelling diode (RTD) is known to be the fastest electronics device that can be fabricated in compact form and operate… 
2015
2015
Hard mask free DRIE of crystalline Si nanobarrel with 6.7nm wall thickness and 50∶1 aspect ratio
Because of the unique mechanical and electrical properties, silicon was widely used in IC/MEMS devices for decades. However, it… 
Review
2014
Review
2014
GaN nanostructuring for the fabrication of thin membranes and emerging applications
We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with… 
2012
2012
Dry Etching
We covered wet etching which is essentially chemical and isotropic (because it is chemical, it is highly selective) Now we… 
2008
2008
Transpiration as a Mechanism for Mechanical and Electrical Energy Conversion.
2006
2006
Integration of Thin Flip Chip in Liquid Crystal Polymer Based Flex
  • Z. Hou
  • 2006
  • Corpus ID: 113794050
2003
2003
Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers
Lithographically defined multiwavelength photonic crystal laser arrays are reported. The dependence of the threshold pump power… 
2002
2002
High-performance resist materials for ArF excimer laser and electron beam lithography
High-performance resist materials for ArF (argon fluoride) excimer laser (λ = 193 nm) and electron beam (EB) lithography for… 
2000
2000
GaN-based NDR Devices for THz Generation
GaN-based Negative Differential Resistance (NDR) diode oscillators have been studied by employing Gunn design criteria applicable… 
1996
1996
Future prospects for dry etching
Abstract 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)