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Dry etching
Known as:
Dry-etch
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of…
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Related topics
Related topics
12 relations
Broader (1)
Etching (microfabrication)
Isotropic etching
Microelectromechanical systems
Plasma ashing
Plasma etcher
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach
Lu Han
,
Tyler A. Piedimonte
,
Hongping Zhao
2013
Corpus ID: 41157105
The formation of large scale, highly uniform and controllable GaN microdome arrays based on a self-assembled low cost method was…
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2006
2006
Growth of mechanically fixed and isolated vertically aligned carbon nanotubes and nanofibers by DC plasma-enhanced hot filament chemical vapor deposition
H. Y. Yap
,
B. Ramaker
,
A. Sumant
,
R. Carpick
2006
Corpus ID: 30512389
2005
2005
Compact variable-focusing microlens with integrated thermal actuator and sensor
Weisong Wang
,
Ji Fang
,
K. Varahramyan
IEEE Photonics Technology Letters
2005
Corpus ID: 27466418
An integrated variable-focusing microlens chip with thermal actuator and sensor, which is capable of adjusting its focal length…
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2004
2004
Triangular Profile Imprint Molds in Nanograting Fabrication
Zhaoning Yu
,
S. Chou
2004
Corpus ID: 10609045
We have developed a technique based on nanoimprint lithography for the fabrication of nanogratings with controllable line widths…
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Highly Cited
2002
Highly Cited
2002
Technology development of 3D detectors for high-energy physics and imaging
G. Pellegrini
,
P. Roy
,
+10 authors
M. Rahman
2002
Corpus ID: 59329471
2001
2001
A monolithic inkjet print head: DomeJet
Sang-Wook Lee
,
H. Kim
,
K. Kuk
,
Y. Oh
Technical Digest. MEMS . 14th IEEE International…
2001
Corpus ID: 2922118
Highly Cited
2000
Highly Cited
2000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 /spl Aring/-12 /spl Aring/)
B. Lee
,
R. Choi
,
+7 authors
J. Lee
International Electron Devices Meeting…
2000
Corpus ID: 56269695
MOSFET's with equivalent oxide thickness of 8-12 /spl Aring/ have been demonstrated by using high-K gate dielectric thin films…
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1998
1998
Microbolometer uncooled infrared camera with 20-mK NETD
W. Radford
,
D. Murphy
,
+7 authors
S. Baur
Defense, Security, and Sensing
1998
Corpus ID: 123711150
Raytheon Sensors and Communications Systems has developed a prototype infrared imaging rifle-sight using an uncooled…
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1993
1993
An efficient volume-removal algorithm for practical three-dimensional lithography simulation with experimental verification
E. W. Scheckler
,
N. Tam
,
A. K. Pfau
,
A. Neureuther
IEEE Trans. Comput. Aided Des. Integr. Circuits…
1993
Corpus ID: 32169601
A fast three-dimensional volume removal algorithm for resist dissolution is presented and verified with applications to optical…
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1983
1983
Passivation of dry-etching damage using low-energy hydrogen implants
J. Wang
,
S. Fonash
,
S. Ashok
IEEE Electron Device Letters
1983
Corpus ID: 23327836
Reactive-ion etching-and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In-this study it is…
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