Dry etching

Known as: Dry-etch 
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of… (More)
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Etching (microfabrication)
Isotropic etchingMicroelectromechanical systemsPlasma ashingPlasma etcher
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Papers overview

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2015
2015
Adaptive Virtual Metrology Design for Semiconductor Dry Etching Process Through Locally Weighted Partial Least Squares
In semiconductor manufacturing processes, virtual metrology (VM) has been investigated as a promising tool to predict important… (More)
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2014
2014
Wafer-level quartz dry etching technology
Wafer-level quartz dry etching technology has been developed, which enables deep reactive ion etching (DRIE) for through-etch of… (More)
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2014
2014
Chlorine- and Fluorine-based dry etching of Germanium-Tin
Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub… (More)
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2011
2011
Crystalline anisotropic dry etching for single crystal silicon
This paper describes the possibility of the crystalline anisotropic etching of single-crystal silicon using a fully dry etching… (More)
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2009
2009
Patterning PDMS using a combination of wet and dry etching
PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls… (More)
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2009
2009
Highly selective electroplated nickel mask for lithium niobate dry etching
A sulfur hexafluoride based reactive ion etching process allowing to etch several micron deep holes with diameters of the order… (More)
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2007
2007
Dry Etching Based Silicon Micromachining
The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single… (More)
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2006
2006
Xenon Difluoride Dry Etching of Si, SiGe Alloy and Ge
Xenon diflouride (XeF2) vapor has been known to be able to spontaneously etch Si isotropically at high rates up to 10 mum/min… (More)
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2004
2004
Chemistry of titanium dry etching in fluorinated and chlorinated gases
native stoichiometric oxide, TiO2, always present on the titanium surface, results in a non-reproducible induction time. During… (More)
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2000
2000
Dry Etching of ZnO Using an Inductively Coupled Plasma
Dry Etching of ZnO Using an Inductively Coupled Plasma Ji-Myon Lee,a,* Ki-Myung Chang,a Kyoung-Kook Kim,a,b Won-Kook Choi,b and… (More)
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