Dry etching

Known as: Dry-etch 
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of… (More)
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Papers overview

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2015
2015
In semiconductor manufacturing processes, virtual metrology (VM) has been investigated as a promising tool to predict important… (More)
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2014
2014
Wafer-level quartz dry etching technology has been developed, which enables deep reactive ion etching (DRIE) for through-etch of… (More)
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2014
2014
Cl- and F- based dry etching of Ge<sub>1-x</sub>Sn<sub>x</sub> were presented in this work. High selectivity of Ge<sub>1-x</sub… (More)
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2011
2011
This paper describes the possibility of the crystalline anisotropic etching of single-crystal silicon using a fully dry etching… (More)
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2009
2009
PDMS films of 10 μm thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls… (More)
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2009
2009
A sulfur hexafluoride based reactive ion etching process allowing to etch several micron deep holes with diameters of the order… (More)
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2007
2007
The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single… (More)
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2006
2006
Xenon diflouride (XeF2) vapor has been known to be able to spontaneously etch Si isotropically at high rates up to 10 mum/min… (More)
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2004
2004
native stoichiometric oxide, TiO2, always present on the titanium surface, results in a non-reproducible induction time. During… (More)
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2000
2000
Dry Etching of ZnO Using an Inductively Coupled Plasma Ji-Myon Lee,a,* Ki-Myung Chang,a Kyoung-Kook Kim,a,b Won-Kook Choi,b and… (More)
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