Plasma ashing

In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a… (More)
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Topic mentions per year

Topic mentions per year

1978-2016
024619782016

Papers overview

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2014
2014
Articles you may be interested in Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet… (More)
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2013
2013
An array-based Plasma-Induced Damage (PID) characterization circuit with various antenna structures is proposed for efficient… (More)
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2010
2010
This paper investigated the plasma ashing damage to patterned porous low k structures with the objective to minimize the plasma… (More)
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2005
2005
This paper will discuss the performance ofequipment which monitors and so controls photoresist thickness and uniformity during… (More)
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2005
2005
It was found that the behavior of a virus in host plant is reflected in the pattern of crystalline inorganic components of the… (More)
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1997
1997
This paper presents an important observation of plasma-induced damage on ultrathin oxides during O/sub 2/ plasma ashing by metal… (More)
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1997
1997
During ashing process, resist has been intuitively regarded as a protection layer and deliberately removed in previous studies by… (More)
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1995
1995
Radio-frequency ~rf! inductively coupled planar plasma ~ICP! provides a better way to generate spatially confined high density… (More)
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1994
1994
The effects of plasma charging damage on the noise properties of MOSFET's which is a necessary consideration for high-performance… (More)
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1978
1978
The compatibility of several post-gate plasma and sputtering processes with radiation-hardened CMOS processing has been… (More)
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