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The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ~2nm Al<sub>2</sub>O<sub>3</sub> tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also(More)
This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and(More)
In this study, a non-selenized CuInGaSe2 (CIGS) solar device with textured zinc oxide (ZnO) antireflection coatings was studied. The ZnO nanostructure was fabricated by a low-temperature aqueous solution deposition method. With controlling the morphology of the solution-grown tapered ZnO nanorod coatings, the average reflectance of the CIGS solar device(More)
— This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum–zinc–tin-oxide (AZTO) and HfO 2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO 2 layer with low-concentration(More)
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