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In this work, we propose a hybrid broadcasting method combining the Crescent and Staggered Broadcasting schemes. Consider N (= Nc + Ns) channels to deliver a video with length D, where Nc is the number of Crescent channels and Ns is the number of Staggered channels. The performance of our proposed scheme is superior to the previous methods.
This work presents a novel method to form polycrystalline Cu(In(1-x)Ga(x))Se(2) (CIGS) thin film by co-sputtering of In─Se and Cu─Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using… (More)
The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ~2nm Al<sub>2</sub>O<sub>3</sub> tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also… (More)
This study investigates the p-well/n-well junction by using secondary electron potential contrast (SEPC) with in-situ nanoprobe biasing. Experimental result demonstrated dopant contrast is restored after applying electricity in the junction nodes. Furthermore, the image contrast was converted to a voltage scale, allowing the junction surface potential and… (More)
A solution-grown subwavelength antireflection coating has been investigated for enhancing the photovoltaic efficiency of thin film solar cells. The 100-nm-height ZnO nanorods coating benefited the photocurrent of Cu(In,Ga)Se2 solar cells from 31.7 to 34.5 mA/cm2 via the decrease of surface light reflectance from 14.5% to 7.0%, contributed by the gradual… (More)
— This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum–zinc–tin-oxide (AZTO) and HfO 2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO 2 layer with low-concentration… (More)
In this study, a non-selenized CuInGaSe2 (CIGS) solar device with textured zinc oxide (ZnO) antireflection coatings was studied. The ZnO nanostructure was fabricated by a low-temperature aqueous solution deposition method. With controlling the morphology of the solution-grown tapered ZnO nanorod coatings, the average reflectance of the CIGS solar device… (More)
In this study, we analyzed the In<sub>2</sub>O<sub>3</sub> thin films with different oxygen flow rate during sputtering as the transistor's channel layer. The electrical analysis including device's reliability and material analysis were both examined.