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Isotropic etching

Known as: Etching (isotropic), Etching (plasma) 
Isotropic etching (e.g. wet etching or chemical etching) is a method commonly used in semi-conductor technology to remove material from a substrate… 
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Papers overview

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2010
2010
Wafer level hermetic sealing using Cu/Sn system was studied in this paper. On 8 inch wafer, seal rings with the width of 300 µm… 
2005
2005
GaN hollow nanocolumns were formed by inductively coupled plasma etching. It was found that the tops of the GaN nanocolumns were… 
Highly Cited
2003
Highly Cited
2003
GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers… 
2002
2002
The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few… 
1999
1999
We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 /spl mu/m gate… 
1996
1996
The effect of discharge treatments such as low-temperanire plasma treatment, atmospheric lowtemperature plasma treatment and… 
Highly Cited
1980
Highly Cited
1980
A process for fabricating experimental Josephson integrated circuits is described that is based primarily on the use of vacuum… 
1972
1972
In conventional sputter etching, heterogeneous surfaces are eroded at generally unpredictable rates. The reasons for this are…