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Isotropic etching
Known as:
Etching (isotropic)
, Etching (plasma)
Isotropic etching (e.g. wet etching or chemical etching) is a method commonly used in semi-conductor technology to remove material from a substrate…
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Related topics
Related topics
3 relations
Dry etching
Etching (microfabrication)
Reactive-ion etching
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Study on Wet Etching of AAO Template
G. Hu
,
Haiming Zhang
,
Wenwen Di
,
Tingting Zhao
2009
Corpus ID: 53504875
The highly ordered anodic aluminum oxide (AAO) template was prepared with two-step anodization. The AAOtemplate was carried out…
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2009
2009
High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
T. Wijesinghe
,
Shiqiang Li
,
M. Breese
,
D. Blackwood
2009
Corpus ID: 87465
2007
2007
Tuning of sculptured-thin-film spectral-hole filters by postdeposition etching
S. M. Pursel
,
M. Horn
,
A. Lakhtakia
2007
Corpus ID: 120949908
Postdeposition chemical etching of spectral-hole filters, which were fabricated as chiral sculptured thin films with central 90…
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Highly Cited
2003
Highly Cited
2003
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching
I. Tiginyanu
,
V. Ursaki
,
+4 authors
H. Föll
2003
Corpus ID: 121070216
GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers…
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2002
2002
Morphology and Effects of Hydrogen Etching of Porous SiC
A. Sagar
,
C. D. Lee
,
R. Feenstra
,
C. K. Inoki
,
T. Kuan
2002
Corpus ID: 30703567
The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few…
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1999
1999
An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance
D. Xu
,
T. Suemitsu
,
+5 authors
T. Tamamura
IEEE Electron Device Letters
1999
Corpus ID: 12851922
We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 /spl mu/m gate…
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Highly Cited
1988
Highly Cited
1988
Effect of Potential Field on Ion Deflection and Shape Evolution of Trenches during Plasma‐Assisted Etching
D. J. Economou
,
R. Alkire
1988
Corpus ID: 98401495
Modele mathematique pour etudier l'evolution de la forme des tranchees au cours de la gravure assistee par plasma
Review
1987
Review
1987
PANDA2: Program for Minimum Weight Design of Stiffened, Composite, Locally Buckled Panels
D. Bushnell
1987
Corpus ID: 56167784
Highly Cited
1980
Highly Cited
1980
Fabrication Process for Josephson Integrated Circuits
J. Greiner
,
C. Kircher
,
+9 authors
Irving Ames
IBM Journal of Research and Development
1980
Corpus ID: 57827739
A process for fabricating experimental Josephson integrated circuits is described that is based primarily on the use of vacuum…
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1972
1972
Sputter-Etching of Heterogeneous Surfaces
L. Maissel
,
C. Standley
,
L. V. Gregor
IBM Journal of Research and Development
1972
Corpus ID: 14591300
In conventional sputter etching, heterogeneous surfaces are eroded at generally unpredictable rates. The reasons for this are…
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