Skip to search formSkip to main contentSkip to account menu

Isotropic etching

Known as: Etching (isotropic), Etching (plasma) 
Isotropic etching (e.g. wet etching or chemical etching) is a method commonly used in semi-conductor technology to remove material from a substrate… 
Wikipedia (opens in a new tab)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
The highly ordered anodic aluminum oxide (AAO) template was prepared with two-step anodization. The AAOtemplate was carried out… 
2007
2007
Postdeposition chemical etching of spectral-hole filters, which were fabricated as chiral sculptured thin films with central 90… 
Highly Cited
2003
Highly Cited
2003
GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers… 
2002
2002
The morphology of the porous network in porous SiC has been studied. It has been found that pore formation starts with a few… 
1999
1999
We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 /spl mu/m gate… 
Highly Cited
1988
Highly Cited
1988
Modele mathematique pour etudier l'evolution de la forme des tranchees au cours de la gravure assistee par plasma 
Highly Cited
1980
Highly Cited
1980
A process for fabricating experimental Josephson integrated circuits is described that is based primarily on the use of vacuum… 
1972
1972
In conventional sputter etching, heterogeneous surfaces are eroded at generally unpredictable rates. The reasons for this are…