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Capacitively coupled plasma

Known as: CCP, Capcitively coupled plasma 
A capacitively coupled plasma (CCP) is one of the most common types of industrial plasma sources. It essentially consists of two metal electrodes… 
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Papers overview

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Highly Cited
2013
Highly Cited
2013
An atmospheric pressure direct current (DC) plasma jet is investigated in N2 and dry air in terms of plasma properties and… 
2010
2010
Dual frequency, capacitively coupled plasma (DF-CCP) tools are now being used for etching of 30 cm diameter wafers during… 
2010
2010
Wafer diameters for microelectronics fabrication will soon transition from 300 to 450 mm at a time when excitation frequencies… 
Highly Cited
2009
Highly Cited
2009
The modelling of low temperature plasmas for fundamental investigations and equipment design is challenged by conflicting goals… 
2007
2007
We numerically investigated Si deep etching with several hundreds of micrometers such as that used in microelectromechanical… 
2007
2005
2005
Design of an all-in-one (main etch, PR ash and clean) dielectric etch chamber requires independent control of plasma generation… 
Highly Cited
2003
Highly Cited
2003
Magnetically enhanced, capacitively coupled radio frequency plasma sources are finding continued use for etching of materials for… 
Highly Cited
2003
Highly Cited
2003
A one-dimensional particle-in-cell/Monte Carlo model is developed to study capacitively coupled (cc) radio-frequency discharges…