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Deep reactive-ion etching

Known as: Bosch process (microtechnology), DRIE, Bosch process 
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers… 
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Papers overview

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2009
2009
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK 
2007
2007
Three-dimensional (3-D) microstages driven by electrostatic comb actuators that provide continuous motion along three axes (x,y… 
2006
2006
This paper describes design, fabrication, and test of an integrated micromachined ultrasound transducer (MUT). This MUT can work… 
2004
2004
In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post… 
2003
2003
While deep reactive ion etching using an inductively coupled plasma (ICP) source has proven to be a boon to the fabrication of… 
Highly Cited
2003
Highly Cited
2003
Aspect ratio dependent etching and microloading effects are two mechanisms leading to non-uniformities in the etching of silicon… 
Highly Cited
2003
Highly Cited
2003
Two-dimensional terahertz photonic crystals were manufactured from Si using deep reactive ion etching. Arrays of square holes… 
2003
2003
Development of a high power optical micro switch fabricated by deep reactive ion etching (DRIE) in silicon on insulator (SOI… 
2001
2001
Due to the inherently non-uniform etching effects in the standard DRIE (Deep Reactive Ion Etch) process, a new technique has been… 
2000
2000
The authors describe the design, fabrication and testing of lateral field emission diodes utilizing the deep reactive ion etch…