Deep reactive-ion etching

Known as: Bosch process (microtechnology), DRIE, Bosch process 
Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers… (More)
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Papers overview

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2010
2010
We present an integrated microand nanofabrication method to create micro/nano dual-scale silicon structures with a controllable… (More)
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2007
2007
This work presents a method for etching tapered sidewalls in silicon using deep reactive ion etching. The method is based on… (More)
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2005
2005
A new dry-etching method for fabricating an anisotropic deep groove in Pyrex/sup /spl reg// glass is described. In the method, a… (More)
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2004
2004
In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post… (More)
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2004
2004
The quality of channel sidewalls resulting from through-wafer deep reactive-ion etching is analysed using scanning electron… (More)
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2003
2003
Micromachining arbitrary 3D silicon structures for micro-electromechanical systems can be accomplished using gray-scale… (More)
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2003
2003
Aspect ratio dependent etching and microloading effects are two mechanisms leading to non-uniformities in the etching of silicon… (More)
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2001
2001
  • S. Tanakaa
  • 2001
In this article, we describe more than 100mm-deep reactive ion etching ~RIE! of silicon carbide ~SiC! in oxygen-added sulfur… (More)
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2001
2001
This paper reports a new fabrication technology of Pyrex glass with a fine pitch electrical feedthrough. Small through holes (40… (More)
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2000
2000
The authors describe the design, fabrication and testing of lateral field emission diodes utilizing the deep reactive ion etch… (More)
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