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Deep reactive-ion etching
Known as:
Bosch process (microtechnology)
, DRIE
, Bosch process
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Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers…
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Related topics
Related topics
6 relations
Broader (2)
Etching (microfabrication)
Semiconductor device fabrication
Integrated circuit
Microelectromechanical systems
Reactive-ion etching
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2009
2009
Cryogenic deep reactive ion etching of silicon micro and nanostructures
L. Sainiemi
2009
Corpus ID: 28231827
OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK
2007
2007
Development of Three-Dimensional Microstages Using Inclined Deep-Reactive Ion Etching
Y. Ando
,
T. Ikehara
,
S. Matsumoto
Journal of microelectromechanical systems
2007
Corpus ID: 28963905
Three-dimensional (3-D) microstages driven by electrostatic comb actuators that provide continuous motion along three axes (x,y…
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2006
2006
A CMOS Compatible Ultrasonic Transducer Fabricated With Deep Reactive Ion Etching
L. Rufer
,
C. Domingues
,
S. Mir
,
V. Pétrini
,
J. Jeannot
,
P. Delobelle
Journal of microelectromechanical systems
2006
Corpus ID: 25191350
This paper describes design, fabrication, and test of an integrated micromachined ultrasound transducer (MUT). This MUT can work…
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2004
2004
Planarize the sidewall ripples of silicon deep reactive ion etching
K. Weng
,
Mei-Ya Wang
,
P. Tsai
2004
Corpus ID: 56070083
In order to diminish the sidewall defects in silicon deep reactive ion etching process, depositing doped silicon dioxide and post…
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2003
2003
Deep reactive ion etching characteristics of a macromachined chemical reactor
R. Besser
,
W. Shin
2003
Corpus ID: 43689785
While deep reactive ion etching using an inductively coupled plasma (ICP) source has proven to be a boon to the fabrication of…
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Highly Cited
2003
Highly Cited
2003
Critical aspect ratio dependence in deep reactive ion etching of silicon
J. Yeom
,
Y. Wu
,
M. Shannon
TRANSDUCERS '03. 12th International Conference on…
2003
Corpus ID: 32597710
Aspect ratio dependent etching and microloading effects are two mechanisms leading to non-uniformities in the etching of silicon…
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Highly Cited
2003
Highly Cited
2003
Two-dimensional terahertz photonic crystals fabricated by deep reactive ion etching in Si
N. Jukam
,
M. Sherwin
2003
Corpus ID: 121539604
Two-dimensional terahertz photonic crystals were manufactured from Si using deep reactive ion etching. Arrays of square holes…
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2003
2003
High-power optical microswitch fabricated by deep reactive ion etching (DRIE)
K. Cochran
,
L. Fan
,
D. DeVoe
SPIE MOEMS-MEMS
2003
Corpus ID: 120412707
Development of a high power optical micro switch fabricated by deep reactive ion etching (DRIE) in silicon on insulator (SOI…
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2001
2001
Low-frequency process for silicon-on-insulator deep reactive ion etching
M. Wasilik
,
A. Pisano
SPIE Micro + Nano Materials, Devices, and…
2001
Corpus ID: 55808818
Due to the inherently non-uniform etching effects in the standard DRIE (Deep Reactive Ion Etch) process, a new technique has been…
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2000
2000
Deep reactive ion etching for lateral field emission devices
V. Milanovic
,
L. Doherty
,
+5 authors
K. Pister
IEEE Electron Device Letters
2000
Corpus ID: 30308470
The authors describe the design, fabrication and testing of lateral field emission diodes utilizing the deep reactive ion etch…
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