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Renormalization and the Kosterlitz-Thouless transition in a two-dimensional superconductor
The nonlinear I-V characteristics of thin high-sheet-resistance Hg-Xe alloy films are examined within the context of the Kosterlitz-Thouless theory of the superconducting transition. In the regime
Electrostatic modification of novel materials
Application of the field-effect transistor principle to novel materials to achieve electrostatic doping is a relatively new research area. It may provide the opportunity to bring about modifications
Phase diagram of electrostatically doped SrTiO3.
The surprising results are, with increasing carrier concentration, an apparent carrier-density dependent conductor-insulator transition, a regime of the anomalous Hall effect, suggesting magnetic ordering, and finally the appearance of superconductivity.
Thickness-Magnetic Field Phase Diagram at the Superconductor-Insulator Transition in 2D
The superconductor-insulator transition in ultrathin films of amorphous Bi has been tuned by changing both film thickness and magnetic field on the same set of films. A thickness\char21{}magnetic
In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X
This work finds that the accumulated charge in the cuprate is due to the depletion of oxygen from specific sites in its unit cell, and shows that interfacing correlated oxides with ionic liquids enables a delicate control of oxygen content, paving the way to novel electrochemical concepts in future oxide electronics.
Magnetic-field-induced superconducting state in Zn nanowires driven in the normal state by an electric current.
Four-terminal resistance measurements have been carried out on Zn nanowires formed using electron-beam lithography, which revealed either negative magnetoresistance near T_{c} or high-magnetic-field-enhanced critical currents.
Stabilization of superconductivity by magnetic field in out-of-equilibrium nanowires
A systematic study has been carried out on the previously reported "magnetic-field-induced superconductivity" of Zn nanowires. By varying parameters such as magnetic field orientation and wire