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Rapid thermal processing
Known as:
RTP
, Rapid thermal anneal
, RTA
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Rapid Thermal Processing (RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (over 1,000 °C) on a…
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Related topics
Related topics
10 relations
Dopant
Dopant Activation
Furnace anneal
Ion implantation
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Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal
Lanxiang Wang
,
S. Su
,
+10 authors
Y. Yeo
IEEE Electron Device Letters
2012
Corpus ID: 24714161
AGe<sub>0.976</sub>Sn<sub>0.024</sub> n<sup>+</sup>/p diode was formed using phosphorus ion (P<sup>+</sup>) implant and rapid…
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2008
2008
Increased Open Circuit Voltage in Cu(In, Ga)S2 Based Solar Cells Prepared by Rapid Thermal Processing of Metal Precursors
S. Merdes
,
R. Kaigawa
,
+6 authors
S. Schmidt
2008
Corpus ID: 107685445
In this work, we present the progress made in Cu(In,Ga)S2 based solar cells prepared from sputtered metals subsequently…
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2007
2007
Rapid Thermal Annealing and Hydrogen Passivation of Polycrystalline Silicon Thin-Film Solar Cells on Low-Temperature Glass
Mason L. Terry
,
D. Inns
,
A. Aberle
2007
Corpus ID: 55182383
The changes in open-circuit voltage ( V o c ), short-circuit current density ( J s c ), and internal quantum efficiency (IQE…
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2006
2006
Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals
R. Camillo-Castillo
,
M. Law
,
+4 authors
S. Mccoy
2006
Corpus ID: 860458
The substantial reductions in anneal times, such as in flash-assist rapid thermal processing (fRTP), place considerably more…
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2005
2005
Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing
B. Salem
,
V. Aimez
,
D. Morris
,
A. Turala
,
P. Régrény
,
M. Gendry
2005
Corpus ID: 67795941
Low-energy (18 keV) phosphorus ion implantation and rapid thermal annealing at 650 °C for 120 s were used to create point defects…
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1999
1999
THERMAL MODEL OF RAPID THERMAL PROCESSING SYSTEMS
J. Urban
,
Werner Blersch
,
S. Paul
1999
Corpus ID: 18644220
Continuously shrinking device parameters and the enlargement of wafer diameters in semiconductor industry require best…
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1999
1999
Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
P. Thompson
,
K. Hobart
,
+8 authors
A. Seabaugh
1999
Corpus ID: 28569140
Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature, with peak-to-valley…
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1998
1998
Effective Passivation of the Low Resistivity Silicon Surface by a Rapid Thermal Oxide/PECVD Silicon Nitride Stack and Its Application to Passivated Rear and Bifacial Si Solar Cells
A. Rohatgi
,
S. Narasimha
,
D. Ruby
1998
Corpus ID: 16132283
Presented at the 2nd World Conference on Photovoltaic Solar Energy Conversion; Vienna, Austria; July 6-10, 1998.
1994
1994
The application of computational simulation to design optimization of an axisymmetric rapid thermal processing system
P. Spence
,
W. Winters
,
R. Kee
,
A. Kermani
1994
Corpus ID: 57155914
We are developing and applying computational models to guide the development of a rapid-thermal-processing system. This work…
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Highly Cited
1993
Highly Cited
1993
Rapid thermal processing : science and technology
R. Fair
1993
Corpus ID: 106466100
1. Rapid Thermal Processing - A Justification 2. Rapid Thermal Processing - Based Epitaxy 3. Rapid Thermal Growth and Processing…
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