Dopant

Known as: Dopants, Dopant atom, Doping agent 
A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) to alter the… (More)
Wikipedia

Topic mentions per year

Topic mentions per year

1969-2017
010020030019692017

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
A successful detection of the stealthy dopant-level circuit (trojan), proposed by Becker et al. at CHES 2013 (LNCS 8086:197–214… (More)
  • figure 1
  • table 1
  • figure 2
  • table 2
  • figure 4
Is this relevant?
Highly Cited
2013
Highly Cited
2013
In recent years, hardware Trojans have drawn the attention of governments and industry as well as the scientific community. One… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
Highly Cited
2011
Highly Cited
2011
The need for reliable models that take into account the nonlinear kinetics of dopants is nowadays of paramount importance… (More)
  • figure 1
  • table I
  • figure 2
  • figure 3
  • figure 5
Is this relevant?
Highly Cited
2009
Highly Cited
2009
A mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Is this relevant?
Highly Cited
2005
Highly Cited
2005
In nanoscale CMOS circuits the random dopant fluctuations (RDF) cause significant threshold voltage (Vt) variations in… (More)
  • figure 1
  • figure 3
  • figure 2
  • figure 4
  • figure 5
Is this relevant?
Highly Cited
2004
Highly Cited
2004
A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed… (More)
  • table 1
Is this relevant?
2003
2003
We discuss an approach for the modelling of random dopant fluctuations based on the impedance field method that has been recently… (More)
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 4
Is this relevant?
Highly Cited
2001
Highly Cited
2001
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on… (More)
  • figure 3
  • figure 1
  • figure 2
  • figure 6
  • figure 4
Is this relevant?
Highly Cited
1999
Highly Cited
1999
This paper presents a new 3D Monte Carlo approach for modeling random dopant fluctuation effects in MOSFETs. The method takes… (More)
  • figure 4
  • figure 5
  • figure 6
  • figure 3
Is this relevant?
Highly Cited
1997
Highly Cited
1997
This paper addresses the numerical requirements for device modeling of statistical dopant fluctuations in MOS transistors. It is… (More)
  • figure 1
  • figure 2
  • figure 3.20
  • figure 4
  • figure 5
Is this relevant?