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Dopant Activation

Dopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often… 
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Related topics

3 relations
DopantRapid thermal processingSemiconductor

Papers overview

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2017
2017
Development of a Self Aligned CMOS Process for Flash Lamp Annealed Polycrystalline Silicon TFTs
2011
2011
Modelling carrier recombination in highly phosphorus-doped industrial emitters
2010
2010
$\hbox{Ge-Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Tunneling Field-Effect Transistors
We report the fabrication and experimental investigation of Ge-SixGe1-xcore-shell nanowire (NW) tunneling field-effect… 
2009
2009
A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles
We demonstrate for the first time a fluorine incorporated band- engineered (BE) tunnel oxide (SiO 2 /HfSiO/SiO 2 ) TANOS with… 
Review
2009
Review
2009
Performance, reliability, radiation effects, and aging issues in microelectronics — from atomic-scale physics to engineering-level modeling
The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper… 
2007
2007
Impact of Preferential P-Diffusion Along the Grain Boundaries on Fine-Grained Polysilicon Solar Cells
Thin-film polysilicon solar cells are a promising low-cost alternative for bulk silicon solar cells due to their reduced material… 
2004
2004
Effect of Post Metallization Annealing for Alternative Gate Stack Devices
The effect of the post-metallization annealing of devices having HfO 2 , La 2 O 3 , or Y 2 O 3 dielectrics and poly-Si or TaN… 
2000
2000
Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate
  • L. KangY. Jeon J.C. Lee
  • Symposium on VLSI Technology. Digest of Technical…
  • 2000
  • Corpus ID: 62810790
MOSCAPs and MOSFETs of a single-layer thin HfO/sub 2/ gate dielectric with n+ polysilicon gate were fabricated and characterized… 
1992
1992
Raman and point contact current-voltage characterization of laser-induced diffusion in GaAs
Raman scattering and point contact current-voltage (PCIV) measurements were used as characterization tools of tin-diffused GaAs… 
1990
1990
Microscopic mechanism for dopant activation in hydrogenated amorphous silicon
Modele microscopique de la passivation et de l'activation du dopage dans le silicium amorphe hydrogene de types n et p… 
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