Dopant Activation

Dopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often… (More)
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2016
2016
Achieving very high concentrations of electrically active dopants is essential for minimizing parasitic resistances in advanced… (More)
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2016
2016
Germanium n+/p junctions with high phosphorus dopant activation (>1020 cm-3) and minimal dopant diffusion were achieved by P… (More)
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2015
2015
Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to… (More)
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2014
2014
We report room temperature p-type acceptor formation in Ge from B and C implant damage up to a level of 120Ω/□ or 1E19/cm3. For n… (More)
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2013
2013
The effects of anneal sequences (ms anneal followed by spike anneal vs. spike anneal followed by ms anneal) were explored… (More)
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2012
2012
Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those… (More)
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2011
2011
  • Yao-Jen Lee
  • 11th International Workshop on Junction…
  • 2011
Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those… (More)
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2009
2009
For the first time, CMOS TFTs of 65nm channel length have been demonstrated by using a novel microwave dopant activation… (More)
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2008
2008
Significant non-uniform 'time at temperature' or Dt variation is observed across a horizontal furnace load in diffusion batch… (More)
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2006
2006
A major area of research for integrated electronic systems is the development of systems on glass or plastic. These alternative… (More)
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