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Furnace anneal
Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect…
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Dopant
Ion implantation
Rapid thermal processing
Semiconductor
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2015
2015
Nanocalorimetry study of the evolution of melting characteristics of single layer silver alkanethiolate lamella: Fast heating/cooling and electrical annealing
Z. Ye
,
L. D. L. Rama
,
Liang Hu
,
M. Efremov
,
L. Allen
2015
Corpus ID: 14304618
2014
2014
Improved Channel Hot-Carrier Reliability in $p$ -FinFETs With Replacement Metal Gate by a Nitrogen Postdeposition Anneal Process
M. Cho
,
H. Arimura
,
+7 authors
G. Groeseneken
IEEE transactions on device and materials…
2014
Corpus ID: 24526308
Channel hot-carrier (CHC) reliability in p-FinFET devices is studied related to the postdeposition anneal (PDA) process. Clearly…
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2012
2012
A study on electric properties for pulse laser annealing of ITO film after wet etching
C. J. Lee
,
H. K. Lin
,
+4 authors
J. Huang
2012
Corpus ID: 55986435
2005
2005
Density-controlled carbon nanotubes
Cheng-Hang Hsu
,
Chia-Fu Chen
,
Chien-Chung Chen
,
Shih-Yu Chan
2005
Corpus ID: 59038691
2002
2002
Electronic structure of carbon-free silicon oxynitride films grown using an organic precursor hexamethyl-disilazane
A. Chainani
,
S. Nema
,
P. Kikani
,
P. I. John
2002
Corpus ID: 55236117
Silicon oxynitride films are grown by plasma-enhanced chemical vapour deposition on single-crystal Si(100) and textured Si solar…
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2001
2001
Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol-gel process
Li-Chun Chang
,
Dai-Ying Lee
,
C. Ho
,
B. Chiou
2001
Corpus ID: 64672461
2000
2000
Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate
L. Kang
,
Y. Jeon
,
+5 authors
J.C. Lee
Symposium on VLSI Technology. Digest of Technical…
2000
Corpus ID: 62810790
MOSCAPs and MOSFETs of a single-layer thin HfO/sub 2/ gate dielectric with n+ polysilicon gate were fabricated and characterized…
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1999
1999
Stress relief of tetrahedral amorphous carbon films by post- deposition thermal annealing
B. Tay
,
Xuetao Shi
,
+4 authors
J. R. Shi
1999
Corpus ID: 20280286
1997
1997
An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs
Yamamoto
,
Ogura
,
Saito
,
Uwasawa
,
Tatsumi
,
Mogami
Symposium on VLSI Technology
1997
Corpus ID: 45961872
Ultrathin gate dielectrics are important to realize high performance and low-voltage operation CMOS devices. An advanced…
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1990
1990
Investigations of Irradiation-Anneal-Reirradiation (IAR) properties trends of RPV welds
J. Hawthorne
,
A. Hiser
1990
Corpus ID: 136565364
Notch ductility, fracture toughness and tensile property trends of two high copper content, submerged arc welds with 288{degree}C…
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