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Molecular beam epitaxy
Known as:
ATG instability
, Molecular-beam epitaxy
, Thermal reactive evaporation
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Molecular beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. It was invented in the late 1960s at Bell Telephone…
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Related topics
Related topics
25 relations
Chemical beam epitaxy
Chemical vapor deposition
Epitaxial wafer
Epitaxy
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2006
Highly Cited
2006
In-polar InN grown by plasma-assisted molecular beam epitaxy
C. Gallinat
,
G. Koblmüller
,
+4 authors
H. Shen
2006
Corpus ID: 123007663
We study the effect of different deposition conditions on the properties of In-polar InN grown by plasma-assisted molecular beam…
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2004
2004
Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
T. Ive
,
O. Brandt
,
M. Ramsteiner
,
M. Giehler
,
H. Kostial
,
K. Ploog
2004
Corpus ID: 122399397
We study the impact of different buffer layers and growth conditions on the properties of InN layers grown on 6H–SiC(0001) by…
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Highly Cited
2003
Highly Cited
2003
Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
Zhengmao Ye
,
J. Campbell
,
Zhonghui Chen
,
Eui-Tae Kim
,
A. Madhukar
2003
Corpus ID: 123018163
We report noise characteristics, carrier capture probability, and photoconductive gain of InAs quantum-dot infrared…
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Highly Cited
2003
Highly Cited
2003
Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
P. Kratzer
,
E. Penev
,
M. Scheffler
2003
Corpus ID: 73700625
1995
1995
GROWTH OF ALN BY METALORGANIC MOLECULAR BEAM EPITAXY
J. MacKenzie
,
C. Abernathy
,
+4 authors
R. Wilson
1995
Corpus ID: 14092382
Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane…
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Highly Cited
1991
Highly Cited
1991
375‐GHz‐bandwidth photoconductive detector
Y. Chen
,
S. Williamson
,
T. Brock
,
F. Smith
,
A. Calawa
1991
Corpus ID: 45244843
We report the development of a new, integrable photoconductive detector, based on low‐temperature‐grown GaAs, that has a response…
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1991
1991
A COMBINED MOLECULAR-BEAM EPITAXY AND SCANNING TUNNELING MICROSCOPY SYSTEM
B. Orr
,
C. W. Snyder
,
M. Johnson
1991
Corpus ID: 55842701
A combined molecular‐beam epitaxy and scanning tunneling microscopy system has been constructed. The design has been optimized…
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Highly Cited
1990
Highly Cited
1990
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
M. Melloch
,
N. Ōtsuka
,
J. Woodall
,
A. C. Warren
,
J. Freeouf
1990
Corpus ID: 96007064
We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250…
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Highly Cited
1983
Highly Cited
1983
High‐quality ZnSe thin films grown by molecular beam epitaxy
T. Yao
,
M. Ogura
,
Seiji Matsuoka
,
T. Morishita
1983
Corpus ID: 205227521
High‐quality, nominally undoped, low‐resistivity ZnSe thin films are grown by molecular beam epitaxy (MBE). The MBE ZnSe shows…
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1976
1976
Planar isolated GaAs devices produced by molecular beam epitaxy
W. C. Ballamy
,
A. Cho
IEEE Transactions on Electron Devices
1976
Corpus ID: 29895122
This paper reports the fabrication of low parasitic capacitance planar beam-leaded structures by means of a novel new technology…
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