Molecular beam epitaxy

Known as: ATG instability, Molecular-beam epitaxy, Thermal reactive evaporation 
Molecular beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. It was invented in the late 1960s at Bell Telephone… (More)
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Topic mentions per year

Topic mentions per year

1975-2017
05010015019752017

Papers overview

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Review
2011
Review
2011
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of… (More)
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2011
2011
Nanocrystalline Graphite Growth on Sapphire by Carbon Molecular Beam Epitaxy S. K. Jerng, D. S. Yu, Y. S. Kim, Junga Ryou… (More)
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2011
2011
Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane… (More)
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2007
2007
We have investigated the molecular-beam epitaxy MBE of InSb nanostructures on 100 GaSb substrates. We show that MBE leads to a… (More)
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2006
2006
The first GaInNAsSb solar cells are reported. The dilute nitride antimonide material, grown by molecular beam epitaxy, has a… (More)
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2002
2002
  • H Ohno
  • International Conference on Molecular Bean…
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Owing to the nonmagnetic nature of III-V compounds magnetic cooperative phenomena were not a part of the rich soil of III-V… (More)
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1990
1990
Buried heterostructure (BH) PbSnTe-PbEuSeTe lasers with a PbSnTe active layer were fabricated for the first time using a two… (More)
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1987
1987
The devices were fabricated using molecular-beam epitaxy (MBE), low-temperature processing, and germanium concentrations of 0, 6… (More)
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1986
1986
A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE… (More)
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1978
1978
A millimeter-wave receiver has been designed and built for the 60-90 GHz frequency band using GaAs mixer diodes prepared by… (More)
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