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Status and prospects for SiC power MOSFETs
SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current statusExpand
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Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
Practical design of high-voltage SiC Schottky rectifiers requires an understanding of the device physics that affect the key performance parameters. Forward characteristics of SiC Schottky rectifiersExpand
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SiC power Schottky and PiN diodes
The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kVExpand
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Low-Temperature Grown III-V Materials
A new kind of semiconductor composite material is demonstrated with a dispersion of semimetallic particles with properties common to high
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GHz bandwidth GaAs light-emitting diodes
Double-heterostructure GaAs/GaAlAs light-emitting diodes (LEDs) have been fabricated with the emitter regions beryllium doped to 2×1019 and 7×1019 cm−3. The 7×1019 cm−3 doped emitters have anExpand
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The Kondo Effect in an Artificial Quantum Dot Molecule
Double quantum dots provide an ideal model system for studying interactions between localized impurity spins. We report on the transport properties of a series-coupled double quantum dot as electronsExpand
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Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad‐band optoelectronic terahertz beam system, we have generated and detected freely propagating,Expand
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Holographic optical coherence imaging of tumor spheroids
We present depth-resolved coherence-domain images of living tissue using a dynamic holographic semiconductor film. An AlGaAs photorefractive quantum-well device is used in an adaptive interferometerExpand
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High-power narrow-band terahertz generation using large-aperture photoconductors
Large-aperture biased photoconductive emitters which can generate high-power narrow-band terahertz (THz) radiation are developed. These emitters avoid saturation at high fluence excitation andExpand
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Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires.
Quantum phase slips have received much attention due to their relevance to superfluids in reduced dimensions and to models of cosmic string production in the early universe. Their establishment inExpand
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