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Chemical beam epitaxy

Known as: CBE (disambiguation), GS-MBE, MOMBE 
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems… 
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Papers overview

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2018
2018
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned… 
Highly Cited
2015
Highly Cited
2015
With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon… 
Highly Cited
2009
Highly Cited
2009
Abstract-We report Al<sub>2</sub>O<sub>3</sub>Zln<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs having both self-aligned in situ Mo… 
Highly Cited
2007
Highly Cited
2007
GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were… 
2004
2004
We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN… 
1996
1996
Boron doping concentrations ≳6×1019 cm−3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi… 
1991
1991
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective… 
Highly Cited
1990
Highly Cited
1990
Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging… 
1988
1988
  • W. Tsang
  • IEEE Circuits and Devices Magazine
  • 1988
  • Corpus ID: 33617287
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is…