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Chemical beam epitaxy
Known as:
CBE (disambiguation)
, GS-MBE
, MOMBE
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Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems…
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Related topics
Related topics
6 relations
Crystal structure
Epitaxy
Evaporation
Molecular beam epitaxy
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces
Joon Sue Lee
,
Sukgeun Choi
,
+15 authors
C. Palmstrøm
PHYSICAL REVIEW MATERIALS
2018
Corpus ID: 119092333
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1D) channels using patterned…
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Highly Cited
2015
Highly Cited
2015
A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction
Jonathan P. Mailoa
,
Colin D. Bailie
,
+5 authors
T. Buonassisi
2015
Corpus ID: 108771599
With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon…
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Highly Cited
2009
Highly Cited
2009
$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
U. Singisetti
,
M. Wistey
,
+13 authors
Yong-ju Lee
IEEE Electron Device Letters
2009
Corpus ID: 44422911
Abstract-We report Al<sub>2</sub>O<sub>3</sub>Zln<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs having both self-aligned in situ Mo…
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Highly Cited
2007
Highly Cited
2007
GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon
P. Mohseni
,
C. Maunders
,
G. Botton
,
R. LaPierre
2007
Corpus ID: 49471909
GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were…
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2005
2005
Erbium–Silicon–Oxide crystalline films prepared by MOMBE
K. Masaki
,
H. Isshiki
,
T. Kimura
2005
Corpus ID: 16628281
2004
2004
Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures
M. Manfra
,
K. Baldwin
,
A. Sergent
,
R. Molnar
,
J. Caissie
2004
Corpus ID: 123408853
We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN…
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1996
1996
Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6
Hyungjun Kim
,
G. Glass
,
+4 authors
J. Greene
1996
Corpus ID: 93418293
Boron doping concentrations ≳6×1019 cm−3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi…
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1991
1991
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
W. Tsang
,
Lin Yang
,
Ming C. Wu
,
Young-Kai Chen
1991
Corpus ID: 1497811
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective…
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Highly Cited
1990
Highly Cited
1990
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
T. Lyon
,
J. Woodall
,
M. Goorsky
,
P. Kirchner
1990
Corpus ID: 1408749
Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging…
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1988
1988
Chemical beam epitaxy
W. Tsang
IEEE Circuits and Devices Magazine
1988
Corpus ID: 33617287
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is…
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