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Chemical beam epitaxy

Known as: CBE (disambiguation), GS-MBE, MOMBE 
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems… 
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Papers overview

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Highly Cited
2015
Highly Cited
2015
With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon… 
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Highly Cited
2015
Highly Cited
2015
We report the structural and optical properties of a molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum… 
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Highly Cited
2007
Highly Cited
2007
GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were… 
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2004
2004
We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN… 
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2002
2002
Abstract We have investigated the origin of contrast features observed in coalesced GaP islands, deposited by chemical beam… 
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2000
2000
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated… 
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1996
1996
Boron doping concentrations ≳6×1019 cm−3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi… 
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1991
1991
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective… 
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Highly Cited
1990
Highly Cited
1990
Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging… 
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1988
1988
  • W. Tsang
  • IEEE Circuits and Devices Magazine
  • 1988
  • Corpus ID: 33617287
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is… 
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