Skip to search formSkip to main contentSkip to account menu

Chemical beam epitaxy

Known as: CBE (disambiguation), GS-MBE, MOMBE 
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems… 
Wikipedia (opens in a new tab)

Related topics

Related topics

6 relations
Crystal structureEpitaxyEvaporationMolecular beam epitaxy

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Influence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBE
InN epilayers were prepared on c-GaN/sapphire substrates by plasma-assisted metal-organic molecular beam epitaxy using N2 and… 
Highly Cited
2009
Highly Cited
2009
$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
Abstract-We report Al<sub>2</sub>O<sub>3</sub>Zln<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs having both self-aligned in situ Mo… 
2008
2008
Chloride-based Silicon Carbide CVD
Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down… 
2005
2005
Erbium–Silicon–Oxide crystalline films prepared by MOMBE
2001
2001
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW
We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy… 
1998
1998
Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers
Review
1995
Review
1995
Heteroepitaxy of lattice-matched compound semiconductors on silicon
The heteroepitaxial overgrowth of silicon by nearly lattice‐matched compound semiconductors is reviewed in the context of the… 
1993
1993
High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors
p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal… 
1991
1991
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective… 
1987
1987
InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions (SAGM-APD's) have been… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)