Skip to search formSkip to main contentSkip to account menu
You are currently offline. Some features of the site may not work correctly.

Chemical beam epitaxy

Known as: CBE (disambiguation), GS-MBE, MOMBE 
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems… 
Wikipedia

Related topics

Related topics

6 relations
Crystal structureEpitaxyEvaporationMolecular beam epitaxy
Expand

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2015
Highly Cited
2015
A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction
With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon… 
  • figure 1
  • figure 2
  • figure 3
Highly Cited
2015
Highly Cited
2015
Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene
We report the structural and optical properties of a molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum… 
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
Highly Cited
2007
Highly Cited
2007
GaP/GaAsP/GaP core multishell nanowire heterostructures on (111) silicon
GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were… 
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
2004
2004
Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures
We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN… 
  • figure 1
  • figure 2
  • figure 3
  • figure 4
2002
2002
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
Abstract We have investigated the origin of contrast features observed in coalesced GaP islands, deposited by chemical beam… 
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
2000
2000
High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated… 
  • table I
  • figure 2
  • figure 3
  • figure 4
  • figure 5
1996
1996
Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6
Boron doping concentrations ≳6×1019 cm−3 were found to increase Si(001) growth rates RSi at low temperatures while decreasing RSi… 
  • figure 2
  • figure 1
1991
1991
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective… 
  • figure 3
  • figure 4
Highly Cited
1990
Highly Cited
1990
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
Epitaxial layers of GaAs have been grown by metalorganic molecular beam epitaxy (MOMBE) with atomic carbon concentrations ranging… 
  • table 1
  • figure 2
  • figure 3
1988
1988
Chemical beam epitaxy
  • W. Tsang
  • IEEE Circuits and Devices Magazine
  • 1988
  • Corpus ID: 33617287
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is… 
  • figure 1
  • figure 2
  • figure 4
  • figure 5
  • figure 7
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy, Terms of Service, and Dataset License
ACCEPT & CONTINUE