Chemical beam epitaxy

Known as: CBE (disambiguation), GS-MBE, MOMBE 
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems… (More)
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2014
2014
Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam… (More)
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2011
2011
Among all known semiconductors, bulk InSb has the highest electron mobility of 77000 cm 3V 1 3 s , along with a sizable hole… (More)
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2010
2010
Hetero-epitaxy of GaAs films on Ge were grown by the chemical beam epitaxy (CBE) technique for super-high-efficiency multi… (More)
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2010
2010
Three infrared active defects in GaAsN grown by chemical beam epitaxy (CBE) are identified as N-H related defects which are… (More)
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2010
2010
Minority-carrier lifetime (electron) in p-type GaAsN film is improved by chemical beam epitaxy (CBE) and thermal annealing… (More)
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2009
2009
Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases, particularly for high vapor… (More)
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2005
2005
GaInNAs films for the ultra high-efficiency (>40%) 4-junction tandem space solar cells ((Al)GaInP/GaAs/ GaInNAs/Ge) have been… (More)
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2004
2004
KAWACHI, M. : ‘Silica-based planar lightwave circuit technologies’. hoc. 17th European Conf. on Optical Communication, 8th Int… (More)
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2002
2002
We have investigated the origin of contrast features observed in coalesced GaP islands, deposited by chemical beam epitaxy on… (More)
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1988
1988
Chemical beam epitaxy (CBE), an offshoot of molecular-beam epitaxy (MBE) and metalorganic chemical vapor deposition (MO-CVD), is… (More)
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