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Chemical beam epitaxy
Known as:
CBE (disambiguation)
, GS-MBE
, MOMBE
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Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems…
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Related topics
Related topics
6 relations
Crystal structure
Epitaxy
Evaporation
Molecular beam epitaxy
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Single-crystal erbium chloride silicate nanowires as a Si-compatible light emission material in communication wavelength
A. Pan
,
L. Yin
,
+5 authors
C. Ning
2011
Corpus ID: 15279371
We report on the first synthesis and structural characterizations of a new Erbium (Er) compound, the erbium chloride silicate…
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2008
2008
Chloride-based Silicon Carbide CVD
H. Pedersen
2008
Corpus ID: 137312220
Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down…
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Highly Cited
2007
Highly Cited
2007
GaP/GaAsP/GaP core–multishell nanowire heterostructures on (111) silicon
P. Mohseni
,
C. Maunders
,
G. Botton
,
R. LaPierre
2007
Corpus ID: 49471909
GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were…
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2005
2005
Erbium–Silicon–Oxide crystalline films prepared by MOMBE
K. Masaki
,
H. Isshiki
,
T. Kimura
2005
Corpus ID: 16628281
2004
2004
Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures
M. Manfra
,
K. Baldwin
,
A. Sergent
,
R. Molnar
,
J. Caissie
2004
Corpus ID: 123408853
We report on the transport properties of a tunable two-dimensional electron gas (2DEG) confined at the lower interface of a GaN…
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1998
1998
Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers
J. Boo
,
S. Ustin
,
W. Ho
1998
Corpus ID: 3774449
1995
1995
GROWTH OF ALN BY METALORGANIC MOLECULAR BEAM EPITAXY
J. MacKenzie
,
C. Abernathy
,
+4 authors
R. Wilson
1995
Corpus ID: 14092382
Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane…
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1993
1993
High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors
L. Lunardi
,
S. Chandrasekhar
,
R. Hamm
IEEE Electron Device Letters
1993
Corpus ID: 27326787
p-n-p InP/InGaAs heterojunction bipolar transistors (HBTs) are reported for the first time. The transistors, grown by metal…
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1991
1991
Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy
W. Tsang
,
Lin Yang
,
Ming C. Wu
,
Young-Kai Chen
1991
Corpus ID: 1497811
Selective area epitaxy and growth over patterned substrate using chemical beam epitaxy (CBE) were investigated. Truly selective…
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1987
1987
InP/In0.53Ga0.47As heterojunction phototransistors grown by chemical beam epitaxy
J. Campbell
,
Won-Tien Tsang
,
G. Qua
IEEE Electron Device Letters
1987
Corpus ID: 31201097
We describe InP/In0.53Ga0.47As heterojunction phototransistors (HPT's) grown by chemical beam epitaxy (CBE). These devices…
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