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Epitaxy

Known as: Epitaxial growth, Heteroepitaxy, LPE 
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. The overlayer is called an epitaxial film or epitaxial layer… 
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Related topics

Related topics

38 relations
Atomic layer epitaxyBismuth tellurideCMOSCharge-coupled device

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Decoupling graphene from SiC(0001) via oxidation
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the ``buffer layer''), while relatively… 
Highly Cited
2007
Highly Cited
2007
Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate
The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using… 
Highly Cited
2006
Highly Cited
2006
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET… 
Highly Cited
2002
Highly Cited
2002
Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study
The temperature-dependent phase coexistence between crystalline phases in heteroepitaxial films of MnAs on GaAs is studied. The… 
Highly Cited
2001
Highly Cited
2001
Strain effects on exciton resonance energies of ZnO epitaxial layers
Magnitudes of strain in ZnO epitaxial layers grown on sapphire(0001) substrates under various growth conditions were… 
Highly Cited
1999
Highly Cited
1999
Two-dimensional photonic bandgap defect laser
We form a new type of optical microcavity using 2D photonic crystals embedded in a half wavelength thick waveguide. Modes… 
Highly Cited
1999
Highly Cited
1999
Titanium oxide films grown on Mo(110)
Highly Cited
1990
Highly Cited
1990
Mechanical stresses in (sub)monolayer epitaxial films.
Etude des contraintes dans des couches minces de Ge croissant sur Si(001), in situ et en temps reel. Du fait de l'accommodation… 
Highly Cited
1981
Highly Cited
1981
Al on GaAs(110) interface: Possibility of adatom cluster formation
A reexamination of the experimental data and previous electronic-structure calculations on the prototype Schottky system Al/GaAs… 
Highly Cited
1980
Highly Cited
1980
Control of gate—Drain avalanche in GaAs MESFET's
The onset of gate-drain avalanche imposes an important fundamental constraint on the drain voltage swing, and hence, on the… 
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