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Epitaxy
Known as:
Epitaxial growth
, Heteroepitaxy
, LPE
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Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. The overlayer is called an epitaxial film or epitaxial layer…
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Related topics
Related topics
38 relations
Atomic layer epitaxy
Bismuth telluride
CMOS
Charge-coupled device
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2006
Highly Cited
2006
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
W. Huang
,
T. Khan
,
T. Chow
IEEE International Symposium on Power…
2006
Corpus ID: 21284119
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET…
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Highly Cited
2004
Highly Cited
2004
Synthesis of copper sulfide nanorod arrays on molecular templates
G. Mao
,
W. Dong
,
D. Kurth
,
H. Möhwald
2004
Corpus ID: 7274484
We investigate the making of semiconductor nanorods using well-defined molecular templates. The films are characterized by AFM…
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Highly Cited
2003
Highly Cited
2003
Ferroelectric epitaxial nanocrystals obtained by a self-patterning method
I. Szafraniak
,
C. Harnagea
,
R. Scholz
,
S. Bhattacharyya
,
D. Hesse
,
M. Alexe
2003
Corpus ID: 55041760
Lead zirconate titanate nanoislands were obtained by a self-patterning method making use of the instability of ultrathin films…
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Highly Cited
2003
Highly Cited
2003
Ferromagnetism in Mn-doped GaAs due to substitutional-interstitial complexes
P. Mahadevan
,
A. Zunger
2003
Corpus ID: 115140623
While most calculations on the properties of the ferromagnetic semiconductor GaAs:Mn have focused on isolated Mn substituting the…
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Highly Cited
2002
Highly Cited
2002
Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
M. Ramsteiner
,
H. Hao
,
+6 authors
K. Ploog
2002
Corpus ID: 56444167
The spin injection into GaAs has been studied for the ferromagnetic metal MnAs. Evidence for preferential minority-spin injection…
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Highly Cited
2001
Highly Cited
2001
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
M. Lee
,
C. Leitz
,
+6 authors
D. Antoniadis
2001
Corpus ID: 16544388
We have fabricated strained Ge channel p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) on Si0.3Ge0.7…
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Highly Cited
1999
Highly Cited
1999
Observation of light propagation in photonic crystal optical waveguides with bends
T. Baba
,
N. Fukaya
,
J. Yonekura
1999
Corpus ID: 56021649
We observed the light propagation in 2-D photonic crystal waveguides with bends, which were composed of densely-packed holes…
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Highly Cited
1990
Highly Cited
1990
Mechanical stresses in (sub)monolayer epitaxial films.
Schell-Sorokin Aj
,
Tromp Rm
1990
Corpus ID: 204006099
Etude des contraintes dans des couches minces de Ge croissant sur Si(001), in situ et en temps reel. Du fait de l'accommodation…
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Highly Cited
1988
Highly Cited
1988
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Paul R. Berger
,
Kevin H. Chang
,
P. Bhattacharya
,
Jasprit Singh
,
K. Bajaj
1988
Corpus ID: 98015932
Theoretical and experimental studies are presented to understand the initial stages of growth of InGaAs on GaAs. Thermodynamic…
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Highly Cited
1983
Highly Cited
1983
The COMFET—A new high conductance MOS-gated device
J. P. Russell
,
A. Goodman
,
L. Goodman
,
J. Neilson
IEEE Electron Device Letters
1983
Corpus ID: 37850113
A new MOS gate-controlled power switch with a very low on-resistance is described. The fabrication process is similar to that of…
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