Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 228,397,754 papers from all fields of science
Search
Sign In
Create Free Account
Epitaxy
Known as:
Epitaxial growth
, Heteroepitaxy
, LPE
Expand
Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. The overlayer is called an epitaxial film or epitaxial layer…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
38 relations
Atomic layer epitaxy
Bismuth telluride
CMOS
Charge-coupled device
Expand
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies
L. Biedermann
,
M. Bolen
,
M. Capano
,
D. Zemlyanov
,
R. Reifenberger
2009
Corpus ID: 45049712
Highly Cited
2003
Highly Cited
2003
Ferroelectric epitaxial nanocrystals obtained by a self-patterning method
I. Szafraniak
,
C. Harnagea
,
R. Scholz
,
S. Bhattacharyya
,
D. Hesse
,
M. Alexe
2003
Corpus ID: 55041760
Lead zirconate titanate nanoislands were obtained by a self-patterning method making use of the instability of ultrathin films…
Expand
Highly Cited
2001
Highly Cited
2001
Ge Self-Diffusion in Epitaxial Si1xGex Layers
J. Fage-Pedersen
,
J. L. Hansen
,
A. Larsen
,
N. Zangenberg
2001
Corpus ID: 119740029
Highly Cited
1999
Highly Cited
1999
Effect of the electrode layer on the polydomain structure of epitaxial PbZr0.2Ti0.8O3 thin films
S. Alpay
,
V. Nagarajan
,
+4 authors
A. Roytburd
1999
Corpus ID: 14906789
PbZr0.2Ti0.8O3(PZT) thin films with and without La0.5Sr0.5CoO3(LSCO) electrodes were grown epitaxially on (001) SrTiO3 at 650 °C…
Expand
Highly Cited
1997
Highly Cited
1997
The structure of Pt-aggregates on a supported thin aluminum oxide film in comparison with unsupported alumina: a transmission electron microscopy study
M. Klimenkov
,
S. Nepijko
,
H. Kuhlenbeck
,
M. Bäumer
,
R. Schlögl
,
H. Freund
1997
Corpus ID: 95409933
Highly Cited
1991
Highly Cited
1991
Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
E. Yablonovitch
,
T. Sands
,
+5 authors
John C. C. Fan
1991
Corpus ID: 16081431
Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of…
Expand
Highly Cited
1990
Highly Cited
1990
Mechanical stresses in (sub)monolayer epitaxial films.
Schell-Sorokin Aj
,
Tromp Rm
1990
Corpus ID: 204006099
Etude des contraintes dans des couches minces de Ge croissant sur Si(001), in situ et en temps reel. Du fait de l'accommodation…
Expand
Highly Cited
1988
Highly Cited
1988
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
Paul R. Berger
,
Kevin H. Chang
,
P. Bhattacharya
,
Jasprit Singh
,
K. Bajaj
1988
Corpus ID: 98015932
Theoretical and experimental studies are presented to understand the initial stages of growth of InGaAs on GaAs. Thermodynamic…
Expand
Highly Cited
1981
Highly Cited
1981
Al on GaAs(110) interface: Possibility of adatom cluster formation
A. Zunger
1981
Corpus ID: 119566048
A reexamination of the experimental data and previous electronic-structure calculations on the prototype Schottky system Al/GaAs…
Expand
Highly Cited
1980
Highly Cited
1980
Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te system
T. Harman
1980
Corpus ID: 55532599
Liquidus isotherms for the Hg1−xCdxTe primary phase field in the Te-rich corner of the Hg-Cd-Te ternary system have been…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE