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We have demonstrated high-performance InAlN/ GaN MOS high-electron-mobility-transistors (MOSHEMTs) with various channel lengths… Expand Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process… Expand We present a method that uses patterned self-assembled monolayers (SAMs) of alkanethiolates on silver as templates to fabricate… Expand Abstract This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the… Expand Abstract The crystallisation behaviour of ZrO2 thin films on Si(0 0 1) wafers, deposited either by ALCVD or by evaporation, was… Expand Nb2O5 thin films were grown by atomic layer epitaxy (ALE) in the temperature range of 150–350°C using Nb(OC2H5)5 and H2O as… Expand Abstract : Thin-layer electrochemical studies of the underpotential deposition (UPD) of Zn, Te, Se, and S on polycrystalline Au… Expand Ta2O5 thin films have been deposited in atomic layer epitaxy process from Ta(OC2H5)5 and H2O. A quartz crystalline mass-sensor… Expand TiN thin films were grown on soda lime glass substrates by atomic layer epitaxy. Two different chemical schemes were studied: a… Expand We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The… Expand