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Atomic layer epitaxy

Known as: ALCVD 
Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a… 
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Related topics

Related topics

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Atomic layer depositionChemical vapor depositionElectroluminescent displayEpitaxy

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2008
2008
Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers
2002
2002
Photoluminescent ZnS:Cu phosphor films made with atomic‐layer chemical vapor deposition and thermal evaporation
Photoluminescent (PL) ZnS:Cu thin films were prepared by atomic‐layer chemical vapor deposition (ALCVD) and by thermal… 
2001
2001
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
1999
1999
Surface smoothing of GaAs microstructure by atomic layer epitaxy
We report a method to smooth the rough surface of GaAs microstructures. This method is based on the nucleation process for atomic… 
1997
1997
Thin Layer Electrochemical Studies of ZnS, ZnSe, and ZnTe Formation by Electrochemical Atomic Layer Epitaxy (ECALE)
Abstract : Thin-layer electrochemical studies of the underpotential deposition (UPD) of Zn, Te, Se, and S on polycrystalline Au… 
1994
1994
Aging studies of atomic layer epitaxy ZnS:Mn alternating‐current thin‐film electroluminescent devices
A study of the aging behavior of atomic layer epitaxy (ALE) ZnS:Mn alternating‐current thin‐film electroluminescent (ACTFEL… 
1993
1993
Hydrogen-halogen chemistry on semiconductor surfaces
1992
1992
Atomic layer epitaxy of YBaCuO for optoelectronic applications
  • R. Skogman
  • Microelectronic Processing
  • 1992
  • Corpus ID: 111050721
A MOCVD based atomic layer epitaxy process is being developed as a potential solution to the problems of film thickness and… 
1990
1990
Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
ZnS was grown on GaAs (001) substrates by a metalorganic molecular beam epitaxy (MOMBE) technique, using sequential dimethylzinc… 
1987
1987
InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy
We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The… 
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