Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 238,281,298 papers from all fields of science
Search
Sign In
Create Free Account
Atomic layer epitaxy
Known as:
ALCVD
Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a…
Expand
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
5 relations
Atomic layer deposition
Chemical vapor deposition
Electroluminescent display
Epitaxy
Expand
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2005
2005
Thin films of ZnO and ZnMnO by atomic layer epitaxy
A. Wójcik
,
K. Kopalko
,
+11 authors
M. Phillips
2005
Corpus ID: 116349145
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese…
Expand
2003
2003
Comparaison de procédés de dépôt de couches minces semiconductrices à partir de précurseurs organométalliques : cas des réacteurs à flux alternes en phase vapeur (ALCVD) et réacteur plasma diode hors…
Frédérique Donsanti
2003
Corpus ID: 92631523
2003
2003
Growth and Critical Layer Thickness Determination of Indium Gallium Nitride Films Grown on Gallium Nitride
C. A. Parker
2003
Corpus ID: 135909899
Many of the physical properties between strained epilayers and relaxed epilayers can be different. A critical layer thickness…
Expand
1999
1999
Surface smoothing of GaAs microstructure by atomic layer epitaxy
S. Hirose
,
A. Yoshida
,
M. Yamaura
,
H. Munekata
1999
Corpus ID: 55292512
We report a method to smooth the rough surface of GaAs microstructures. This method is based on the nucleation process for atomic…
Expand
1997
1997
Thin Layer Electrochemical Studies of ZnS, ZnSe, and ZnTe Formation by Electrochemical Atomic Layer Epitaxy (ECALE)
L. Colletti
,
Sajan Thomas
,
Elvin M. Wilmer
,
J. Stickney
1997
Corpus ID: 93624989
Abstract : Thin-layer electrochemical studies of the underpotential deposition (UPD) of Zn, Te, Se, and S on polycrystalline Au…
Expand
1996
1996
Growth and characterization of thin film electroluminescent devices fabricated using atomic layer epitaxy
W. Kong
1996
Corpus ID: 137347779
Growth and Characterization of Thin Film Electroluminescent Devices Fabricated Using Atomic Layer Epitaxy
1994
1994
Aging studies of atomic layer epitaxy ZnS:Mn alternating‐current thin‐film electroluminescent devices
A. Abu-Dayah
,
J. Wager
1994
Corpus ID: 53067782
A study of the aging behavior of atomic layer epitaxy (ALE) ZnS:Mn alternating‐current thin‐film electroluminescent (ACTFEL…
Expand
1993
1993
Atomic Layer Epitaxy of Boron Nitride
M. A. Khan
1993
Corpus ID: 47846432
Abstract : This document summarizes the work performed under the Phase I project aimed at developing the wide bandgap nitrides…
Expand
1993
1993
Evidence for Space Charge in Atomic Layer Epitaxy ZnS:Mn Alternating- Current Thin-Film Electroluminescent Devices,
A. Douglas
,
J. Wager
,
D. Morton
,
J. Koh
,
C. Høgh
1993
Corpus ID: 46159475
Electrical and optical measurements of ZnS:Mn alternating‐current thin‐film electroluminescent (ACTFEL) devices grown by atomic…
Expand
1989
1989
Using Molecular-Beam Epitaxy to Fabricate Quantum-Well Devices
W. Goodhue
1989
Corpus ID: 7847135
Recent advances in thin-film crystal-g:rowth techniques such as molecular-beam epitaxy (MBE) have enabled the fabrication of…
Expand