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Atomic layer epitaxy

Known as: ALCVD 
Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a… Expand
Wikipedia

Papers overview

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2016
2016
We have demonstrated high-performance InAlN/ GaN MOS high-electron-mobility-transistors (MOSHEMTs) with various channel lengths… Expand
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Review
2007
Review
2007
Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process… Expand
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2007
2007
We present a method that uses patterned self-assembled monolayers (SAMs) of alkanethiolates on silver as templates to fabricate… Expand
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2006
2006
Abstract This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the… Expand
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2001
2001
Abstract The crystallisation behaviour of ZrO2 thin films on Si(0 0 1) wafers, deposited either by ALCVD or by evaporation, was… Expand
1998
1998
Nb2O5 thin films were grown by atomic layer epitaxy (ALE) in the temperature range of 150–350°C using Nb(OC2H5)5 and H2O as… Expand
1997
1997
Abstract : Thin-layer electrochemical studies of the underpotential deposition (UPD) of Zn, Te, Se, and S on polycrystalline Au… Expand
Highly Cited
1997
Highly Cited
1997
Ta2O5 thin films have been deposited in atomic layer epitaxy process from Ta(OC2H5)5 and H2O. A quartz crystalline mass-sensor… Expand
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Highly Cited
1995
Highly Cited
1995
TiN thin films were grown on soda lime glass substrates by atomic layer epitaxy. Two different chemical schemes were studied: a… Expand
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1987
1987
We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The… Expand