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Atomic layer epitaxy

Known as: ALCVD 
Atomic layer epitaxy (ALE) or Atomic Layer Chemical Vapor Deposition (ALCVD), now more generally called Atomic Layer Deposition (ALD), is a… 
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Papers overview

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2016
2016
We have demonstrated high-performance InAlN/ GaN MOS high-electron-mobility-transistors (MOSHEMTs) with various channel lengths… 
2014
2014
We report an atomic layer epitaxial growth of Ruddlesden-Popper (RP) thin films of SrO(SrTiO3)n (n = ∞, 2, 3, 4) by means of… 
Review
2007
Review
2007
Atomic layer deposition (ALD) has recently become the method of choice for the semiconductor industry to conformally process… 
1999
1999
We report a method to smooth the rough surface of GaAs microstructures. This method is based on the nucleation process for atomic… 
1998
1998
Nb2O5 thin films were grown by atomic layer epitaxy (ALE) in the temperature range of 150–350°C using Nb(OC2H5)5 and H2O as… 
Highly Cited
1995
Highly Cited
1995
TiN thin films were grown on soda lime glass substrates by atomic layer epitaxy. Two different chemical schemes were studied: a… 
1990
1990
ZnS was grown on GaAs (001) substrates by a metalorganic molecular beam epitaxy (MOMBE) technique, using sequential dimethylzinc… 
1987
1987
We report the first observation of stimulated emission (16 K and 77 K) in any material grown by atomic layer epitaxy (ALE). The…