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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Papers overview

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Highly Cited
2012
Highly Cited
2012
This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO<sub>2</sub… 
Highly Cited
2011
Highly Cited
2011
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric are demonstrated. A… 
Highly Cited
2010
Highly Cited
2010
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
2009
2009
The performance and reliability of ZrO<inf>2</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs are shown to be improved by… 
2008
2008
A new simple method combining hot-wire CVD and pulsed liquid injection of metal-organic precursor solutions was developed for… 
Highly Cited
2008
Highly Cited
2008
Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
Highly Cited
2004
Highly Cited
2004
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS… 
2004
2004
Threshold voltage instability is a critical problem for high-K dielectric implementation. This problem is much more serious for… 
Highly Cited
2003
Highly Cited
2003
Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties…