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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Related topics

Related topics

21 relations
Atomic layer epitaxyAtomic layer etchingChemical vapor depositionCombustion chemical vapor deposition

Papers overview

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Highly Cited
2012
Highly Cited
2012
Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces
This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO<sub>2</sub… 
Highly Cited
2011
Highly Cited
2011
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric are demonstrated. A… 
Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
2009
2009
InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack
The performance and reliability of ZrO<inf>2</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs are shown to be improved by… 
2008
2008
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
A new simple method combining hot-wire CVD and pulsed liquid injection of metal-organic precursor solutions was developed for… 
Highly Cited
2008
Highly Cited
2008
High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
Highly Cited
2004
Highly Cited
2004
Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS… 
2004
2004
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack
Threshold voltage instability is a critical problem for high-K dielectric implementation. This problem is much more serious for… 
Highly Cited
2003
Highly Cited
2003
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties… 
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