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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Papers overview

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Highly Cited
2015
Highly Cited
2015
For the successful commercialization of organic–inorganic halide perovskite solar cells, it is necessary to ensure their… 
Highly Cited
2010
Highly Cited
2010
Al-doped ZnO (AZO) films of ∼100 nm thickness with various Al doping were prepared at 150 °C by atomic layer deposition on quartz… 
Highly Cited
2010
Highly Cited
2010
Ultrathin atomic layer deposition (ALD) coatings were found to enhance the performance of lithium-ion batteries (LIBs). Previous… 
Review
2009
Review
2009
In this paper recent work on the application of in situ spectroscopic ellipsometry (SE) during thin film synthesis by atomic… 
Highly Cited
2008
Highly Cited
2008
The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied… 
Highly Cited
2008
Highly Cited
2008
The authors present a new method for preparing thin films of SnO2 by atomic layer deposition (ALD) using alternating exposures to… 
Highly Cited
2007
Highly Cited
2007
Sorption and diffusion of precursors through polymer layers were considered as limitations to the successful implementation of a… 
Highly Cited
2006
Highly Cited
2006
Thin Al2O3 films of different thicknesses (10–40nm) were deposited by plasma-assisted atomic layer deposition on substrates of… 
Review
2003
Review
2003
Atomic layer deposition (ALD) has been studied for several decades now, but the interest in ALD of metal and nitride thin films…