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Atomic layer deposition
Known as:
ALD
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is…
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Related topics
Related topics
21 relations
Atomic layer epitaxy
Atomic layer etching
Chemical vapor deposition
Combustion chemical vapor deposition
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces
Jun Wang
,
Seyyed Sadegh Mottaghian
,
M. Baroughi
IEEE Transactions on Electron Devices
2012
Corpus ID: 8951146
This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO<sub>2</sub…
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Highly Cited
2011
Highly Cited
2011
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
Min Xu
,
Runsheng Wang
,
P. D. Ye
IEEE Electron Device Letters
2011
Corpus ID: 24729507
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric are demonstrated. A…
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Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
N. Sanford
,
P. Blanchard
,
+6 authors
S. George
2010
Corpus ID: 55303148
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN…
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2009
2009
InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack
J. Huang
,
N. Goel
,
+11 authors
R. Jammy
International Electron Devices Meeting
2009
Corpus ID: 33156156
The performance and reliability of ZrO<inf>2</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs are shown to be improved by…
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2008
2008
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
A. Abrutis
,
V. Plaušinaitienė
,
+7 authors
J. Siegel
2008
Corpus ID: 95534491
A new simple method combining hot-wire CVD and pulsed liquid injection of metal-organic precursor solutions was developed for…
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Highly Cited
2008
Highly Cited
2008
High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts
Jia Feng
,
G. Thareja
,
+7 authors
J. Plummer
IEEE Electron Device Letters
2008
Corpus ID: 38771496
Rapid melt growth was used to fabricate gate-all-around germanium-on-insulator (GeOI) p-MOSFETs with plasma-nitrided Ge surface…
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Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Yanqing Wu
,
Y. Xuan
,
T. Shen
,
P. Ye
,
Z. Cheng
,
Anthony Lochtefeld
2007
Corpus ID: 120643563
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length…
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Highly Cited
2004
Highly Cited
2004
Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
C. O. Chui
,
Hyoungsub Kim
,
P. McIntyre
,
K. Saraswat
IEEE Electron Device Letters
2004
Corpus ID: 38408577
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS…
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2004
2004
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack
H. Tseng
,
C. Capasso
,
+15 authors
B. White
IEDM Technical Digest. IEEE International…
2004
Corpus ID: 44566015
Threshold voltage instability is a critical problem for high-K dielectric implementation. This problem is much more serious for…
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Highly Cited
2003
Highly Cited
2003
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
J. F. Conley
,
Y. Ono
,
D. Tweet
,
W. Zhuang
,
R. Solanki
2003
Corpus ID: 6830946
Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties…
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