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Atomic layer deposition
Known as:
ALD
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is…
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Related topics
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21 relations
Atomic layer epitaxy
Atomic layer etching
Chemical vapor deposition
Combustion chemical vapor deposition
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2010
2010
Heteroepitaxy of single-crystal LaLuO3 on GaAs(111)A by atomic layer deposition
Yiqun Liu
,
Min Xu
,
Jaeyeong Heo
,
P. Ye
,
R. Gordon
2010
Corpus ID: 120410353
We demonstrate that LaLuO3 films can be grown epitaxially on sulfur-passivated GaAs(111)A substrates by atomic layer deposition…
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Review
2009
Review
2009
Atomic Layer Deposition for All-Solid-State 3D-Integrated Batteries
Hcm Harm Knoops
,
Me Merijn Donders
,
Sanden van de Mcm
,
Phl Peter Notten
,
W. E. Kessels
2009
Corpus ID: 60771882
All-solid-state 3D integrated batteries can reach the energy storage capacity required for future wireless devices by exploiting…
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2009
2009
All dielectric hard x-ray mirror by atomic layer deposition
A. Szeghalmi
,
S. Senz
,
M. Bretschneider
,
U. Gösele
,
M. Knez
2009
Corpus ID: 119944846
Mirrors consisting of Al2O3 and Ta2O5 (∼2 nm film thickness) nanolaminates for hard x-ray wavelengths were produced by atomic…
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2008
2008
Two-silane chemical vapor deposition treatment of polymer (nylon) and oxide surfaces that yields hydrophobic (and superhydrophobic), abrasion-resistant thin films
G. Saini
,
K. Sautter
,
F. Hild
,
Jerry L. Pauley
,
M. Linford
2008
Corpus ID: 51827861
This article describes a two-silane, chemical vapor deposition (CVD) approach to creating hydrophobic (or even superhydrophobic…
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Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Yanqing Wu
,
Y. Xuan
,
T. Shen
,
P. Ye
,
Z. Cheng
,
Anthony Lochtefeld
2007
Corpus ID: 120643563
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length…
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Highly Cited
2007
Highly Cited
2007
Low-temperature growth of ZnO nanorods in anodic aluminum oxide on Si substrate by atomic layer deposition
Ching-Jung Yang
,
S. Wang
,
S. Liang
,
Yung‐Huang Chang
,
Chih Chen
,
J. Shieh
2007
Corpus ID: 123170699
Low-temperature growth of self-organized ZnO nanorods on Si substrate is achieved using anodic aluminum oxide and atomic layer…
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2006
2006
Real-time observation and optimization of tungsten atomic layer deposition process cycle
W. Lei
,
L. Henn-Lecordier
,
M. Anderle
,
G. Rubloff
,
M. Barozzi
,
M. Bersani
2006
Corpus ID: 62793979
In the search for a chemical sensing strategy to monitor atomic layer deposition (ALD) processes suitable for real-time…
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2002
2002
Modeling and simulation of atomic layer deposition at the feature scale
M. Gobbert
,
V. Prasad
,
T. Cale
2002
Corpus ID: 12255520
We present a transient Boltzmann equation based transport and reaction model for atomic layer deposition (ALD) at the feature…
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1998
1998
Visible dual-wavelength light generation in optical superlattice Er : LiNbO3 through upconversion and quasi-phase-matched frequency doubling
Jian-Jun Zheng
,
Yan-qing Lu
,
+5 authors
Zu-Yan Xu
1998
Corpus ID: 123025204
Optical superlattice Er:LiNbO3 was fabricated by inducing a periodic ferroelectric domain structure into the crystal during the…
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Highly Cited
1997
Highly Cited
1997
CVD of Compound Semiconductors: Precursor Synthesis, Development and Applications
A. C. Jones
,
P. O’Brien
1997
Corpus ID: 92780724
Basic electronics introduction to vapour-phase epitaxy MOCVD ALE CBE precursor chemistry general classes synthesis purification…
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