Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… (More)
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Highly Cited
2017
Highly Cited
2017
The principles of the atomic layer deposition (ALD) method are presented emphasizing the importance of precursor and surface… (More)
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2016
2016
Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin B50 nm film of cobalt oxide… (More)
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2013
2013
The ferroelectric and electro-optical properties of LiNbO3 make it an important material for current and future applications. It… (More)
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2013
2013
The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer… (More)
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Highly Cited
2011
Highly Cited
2011
For some wafer fabrication processes in cluster tools, e.g., atomic layer deposition (ALD), wafer revisiting is required… (More)
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2011
2011
Thin film solar cells made from earth-abundant, non-toxic materials are needed to replace the current technology that uses Cu(In… (More)
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2010
2010
We report on the use of the atomic layer deposition (ALD) process for fabricating liquid core antiresonant reflecting optical… (More)
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2009
2009
We report on zinc oxide (ZnO)-based devices produced by a fast, open-air atomic layer deposition (ALD) process relying upon the… (More)
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Highly Cited
2007
Highly Cited
2007
Atomic layer deposition (ALD), originally called Atomic layer epitaxy (ALE), was developed in the 1970s by Suntola and Antson to… (More)
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2007
2007
We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic… (More)
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