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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Related topics

Related topics

21 relations
Atomic layer epitaxyAtomic layer etchingChemical vapor depositionCombustion chemical vapor deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Hierarchical functional layers on high-capacity lithium-excess cathodes for superior lithium ion batteries
Highly Cited
2011
Highly Cited
2011
Filling Narrow Trenches by Iodine-Catalyzed CVD of Copper and Manganese on Manganese Nitride Barrier/Adhesion Layers
We present a process for the void-free filling of sub-100 nm trenches with copper or copper-manganese alloy by chemical vapor… 
Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
Highly Cited
2009
Highly Cited
2009
First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching
The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
2007
2007
Atomic Layer Deposition of Magnetic Thin Films
We report on the research effort towards the development of processes for the realization of magnetic tunnel junctions by atomic… 
Highly Cited
2006
Highly Cited
2006
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress
Highly Cited
2004
Highly Cited
2004
Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS… 
Highly Cited
2003
Highly Cited
2003
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties… 
Highly Cited
2003
Highly Cited
2003
Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)/sub 1-x/ gate stacks
We present a physical modeling of tunneling currents through ultrathin high-/spl kappa/ gate stacks, which includes an ultrathin… 
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