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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Related topics

Related topics

21 relations
Atomic layer epitaxyAtomic layer etchingChemical vapor depositionCombustion chemical vapor deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Hierarchical functional layers on high-capacity lithium-excess cathodes for superior lithium ion batteries
Highly Cited
2012
Highly Cited
2012
Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces
This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO<sub>2</sub… 
Highly Cited
2011
Highly Cited
2011
GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric
GaSb inversion-mode PMOSFETs with atomic-layer-deposited (ALD) Al<sub>2</sub>O<sub>3</sub> as gate dielectric are demonstrated. A… 
Highly Cited
2010
Highly Cited
2010
Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN… 
2010
2010
Ultrathin HfON Trapping Layer for Charge-Trap Memory Made by Atomic Layer Deposition
Charge storage characteristics of a hafnium oxynitride (HfON) charge-trapping layer prepared by atomic layer deposition in a… 
2009
2009
InGaAs MOSFET performance and reliability improvement by simultaneous reduction of oxide and interface charge in ALD (La)AlOx/ZrO2 gate stack
The performance and reliability of ZrO<inf>2</inf>/In<inf>0.53</inf>Ga<inf>0.47</inf>As MOSFETs are shown to be improved by… 
Highly Cited
2009
Highly Cited
2009
First experimental demonstration of 100 nm inversion-mode InGaAs FinFET through damage-free sidewall etching
The first well-behaved inversion-mode InGaAs FinFET with gate length down to 100 nm with ALD Al2O3 as gate dielectric has been… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
Highly Cited
2004
Highly Cited
2004
Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate
In this letter, we present the use of atomic layer deposition (ALD) for high-/spl kappa/ gate dielectric formation in Ge MOS… 
Highly Cited
2003
Highly Cited
2003
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
Thin HfO2 films have been deposited on silicon via atomic layer deposition using anhydrous hafnium nitrate [Hf(NO3)4]. Properties… 
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