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Atomic layer deposition

Known as: ALD 
Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. ALD is… 
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Papers overview

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2010
2010
We demonstrate that LaLuO3 films can be grown epitaxially on sulfur-passivated GaAs(111)A substrates by atomic layer deposition… 
Review
2009
Review
2009
All-solid-state 3D integrated batteries can reach the energy storage capacity required for future wireless devices by exploiting… 
2009
2009
Mirrors consisting of Al2O3 and Ta2O5 (∼2 nm film thickness) nanolaminates for hard x-ray wavelengths were produced by atomic… 
2008
2008
This article describes a two-silane, chemical vapor deposition (CVD) approach to creating hydrophobic (or even superhydrophobic… 
Highly Cited
2007
Highly Cited
2007
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length… 
Highly Cited
2007
Highly Cited
2007
Low-temperature growth of self-organized ZnO nanorods on Si substrate is achieved using anodic aluminum oxide and atomic layer… 
2006
2006
In the search for a chemical sensing strategy to monitor atomic layer deposition (ALD) processes suitable for real-time… 
2002
2002
We present a transient Boltzmann equation based transport and reaction model for atomic layer deposition (ALD) at the feature… 
1998
1998
Optical superlattice Er:LiNbO3 was fabricated by inducing a periodic ferroelectric domain structure into the crystal during the… 
Highly Cited
1997
Highly Cited
1997
Basic electronics introduction to vapour-phase epitaxy MOCVD ALE CBE precursor chemistry general classes synthesis purification…