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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… (More)
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Topic mentions per year

Topic mentions per year

2006-2018
012320062018

Related topics

Related topics

4 relations
Atomic layer depositionHigh-κ dielectric

Broader (2)

Etching (microfabrication)Semiconductor device fabrication

Related mentions per year

Related mentions per year

1940-2018
19401960198020002020
Atomic layer etching
Semiconductor device fabrication
Etching (microfabrication)
High-κ dielectric
Atomic layer deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas
Atomic layer etching (ALE) typically divides the etching process into two self­limited reactions. One reaction passivates a… (More)
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Review
2017
Review
2017
Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important… (More)
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Review
2015
Review
2015
Moving from thin films to atomic layers — Atomic layer etching
Summary form only given. Controlled layer by layer material removal will be required for device fabrication in the future. Atomic… (More)
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2012
2012
Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas
The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism… (More)
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2012
2012
Concept of Spatially-divided Deep Reactive Ion Etching of Si using oxide atomic layer deposition in the passivation cycle
Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to… (More)
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2009
2009
Atomic layer etching of III–V compound materials using a low angle forward reflected Ne neutral beam
Atomic layer etching characteristics of III–V compound materials have been investigated using a Ne neutral beam and Cl2 gas. At… (More)
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2009
2009
A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs
For the first time, a novel damage-free neutral beam-assisted atomic etching process has successfully demonstrated the removal of… (More)
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2008
2008
Plasma atomic layer etching using conventional plasma equipment
The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer… (More)
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2008
2008
Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT utilizing Ne-based atomic layer etching
The characteristics of 0.15 mum In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As pseudomorphic high… (More)
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2007
2007
Recipes for Plasma Atomic Layer Etching
Summary form only given. The development of robust processes for gate plasma etching to produce desired profiles and sidewall… (More)
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