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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… 
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Related topics

Related topics

4 relations
Atomic layer depositionHigh-κ dielectricSemiconductor device fabrication

Broader (1)

Etching (microfabrication)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
New frontiers of atomic layer etching
Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or… 
2016
2016
Evaluation of atomic layer etching possibility at Lund Nano Lab
In modern electronics, device downscaling demands atomic precision control and Atomic Layer Etching (ALE) can provide this prime… 
Review
2015
Review
2015
(Invited) Atomic Layer Etching Using Thermal Reactions: Atomic Layer Deposition in Reverse
Atomic layer etching (ALE) can remove thin films with atomic layer control based on sequential, self -limiting surface reactions… 
Review
2015
Review
2015
Moving from thin films to atomic layers — Atomic layer etching
Summary form only given. Controlled layer by layer material removal will be required for device fabrication in the future. Atomic… 
2013
2013
Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching
We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential… 
2013
2013
Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices
Silicon atomic layer etching (ALET) using Cl2 is applied to remove the damaged layer on a 30 nm contact silicon surface formed by… 
2010
2010
Atomic layer etching using a pulsed plasma
A system and method for fast atomic layer etching (ALET), has a pulsed plasma source, a reaction chamber. Plasma source includes… 
2007
2007
Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas
Atomic scale etching (ASE) of poly-Si, which can give etching with atomic scale accuracy, was investigated in inductively coupled… 
2006
2006
Etching of poly-Si with atomic scale accuracy in inductively coupled Ar and He plasmas
Atomic scale etching of poly-Si, which can give atomic scale accuracy, was investigated in inductively coupled Ar and He plasmas… 
2005
2005
Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation
In this study, the etch rate and surface roughness during the Si atomic layer etching using Cl2 and Ar neutral beam were… 
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