Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… (More)
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Topic mentions per year

Topic mentions per year

2006-2018
012320062018

Papers overview

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2018
2018
Atomic layer etching (ALE) typically divides the etching process into two self­limited reactions. One reaction passivates a… (More)
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Review
2017
Review
2017
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important… (More)
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Review
2015
Review
2015
Summary form only given. Controlled layer by layer material removal will be required for device fabrication in the future. Atomic… (More)
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2012
2012
The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism… (More)
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2012
2012
Conventional Deep Reactive Ion Etching (DRIE) is a plasma etch process with alternating half-cycles of 1) Si-etching with SF6 to… (More)
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2009
2009
Atomic layer etching characteristics of III–V compound materials have been investigated using a Ne neutral beam and Cl2 gas. At… (More)
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2009
2009
For the first time, a novel damage-free neutral beam-assisted atomic etching process has successfully demonstrated the removal of… (More)
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2008
2008
The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer… (More)
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2008
2008
The characteristics of 0.15 mum In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As pseudomorphic high… (More)
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2007
2007
Summary form only given. The development of robust processes for gate plasma etching to produce desired profiles and sidewall… (More)
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