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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… 
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Related topics

Related topics

4 relations
Atomic layer depositionHigh-κ dielectricSemiconductor device fabrication

Broader (1)

Etching (microfabrication)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
New frontiers of atomic layer etching
Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or… 
2018
2018
Consequences of atomic layer etching on wafer scale uniformity in inductively coupled plasmas
Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a… 
Review
2015
Review
2015
(Invited) Atomic Layer Etching Using Thermal Reactions: Atomic Layer Deposition in Reverse
Atomic layer etching (ALE) can remove thin films with atomic layer control based on sequential, self -limiting surface reactions… 
2013
2013
Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance
A damaged layer remains on silicon substrates after high-aspect-ratio contact (HARC) etching when using a fluorocarbon gas… 
2013
2013
Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices
Silicon atomic layer etching (ALET) using Cl2 is applied to remove the damaged layer on a 30 nm contact silicon surface formed by… 
2013
2013
Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching
We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential… 
2010
2010
Atomic layer etching using a pulsed plasma
A system and method for fast atomic layer etching (ALET), has a pulsed plasma source, a reaction chamber. Plasma source includes… 
2006
2006
Etching of poly-Si with atomic scale accuracy in inductively coupled Ar and He plasmas
Atomic scale etching of poly-Si, which can give atomic scale accuracy, was investigated in inductively coupled Ar and He plasmas… 
2005
2005
Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation
In this study, the etch rate and surface roughness during the Si atomic layer etching using Cl2 and Ar neutral beam were… 
1995
1995
Surface Reactions in Atomic Layer Etching
塩素によるSiエッチングの表面反応素過程を水素と酸素の脱離反応と比較しながら,表面吸着構造モデルを用いて説明する。Si原子層エッチングにおいて原子層のエッチング速度だけでなく,原子スケールで平坦なエッチング表面を得るためには,表面ステップからのSi… 
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