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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… 
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Related topics

Related topics

4 relations
Atomic layer depositionHigh-κ dielectricSemiconductor device fabrication

Broader (1)

Etching (microfabrication)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2019
2019
Isotropic atomic layer etching of ZnO using acetylacetone and O2 plasma (Conference Presentation)
The continuous driving force from the semiconductor industry for realizing smaller features and device structures with higher… 
2016
2016
Evaluation of atomic layer etching possibility at Lund Nano Lab
In modern electronics, device downscaling demands atomic precision control and Atomic Layer Etching (ALE) can provide this prime… 
Review
2015
Review
2015
(Invited) Atomic Layer Etching Using Thermal Reactions: Atomic Layer Deposition in Reverse
Atomic layer etching (ALE) can remove thin films with atomic layer control based on sequential, self -limiting surface reactions… 
2013
2013
Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching
We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential… 
2013
2013
Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices
Silicon atomic layer etching (ALET) using Cl2 is applied to remove the damaged layer on a 30 nm contact silicon surface formed by… 
2012
2012
Atomic layer etching using metastables formed from an inert gas
Substrate processing systems and methods for etching an atomic layer are disclosed. The methods and systems are configured to… 
2012
2012
Atomic layer etching method of graphene
PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control… 
2010
2010
Atomic layer etching using a pulsed plasma
A system and method for fast atomic layer etching (ALET), has a pulsed plasma source, a reaction chamber. Plasma source includes… 
2010
2010
Atomic layer by pulsed plasma etching
The present invention provides a fast atom layer etching (an ALET) system and method, the system includes a pulsed plasma source… 
2005
2005
Surface Roughness Variation during Si Atomic Layer Etching by Chlorine Adsorption Followed by an Ar Neutral Beam Irradiation
In this study, the etch rate and surface roughness during the Si atomic layer etching using Cl2 and Ar neutral beam were… 
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