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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… Expand
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Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
The mechanism for atomic layer etching (ALE) typically consists of two sequential self-limited half-reactions—passivation and ion… Expand
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2017
2017
Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials… Expand
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2015
2015
Conventional (3D) etching in silicon is often based on the ‘Bosch’ plasma etch with alternating half-cycles of a directional… Expand
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2013
2013
BeO was investigated as the interface passivation layer (IPL) between a high-k dielectric and a III-V compound semiconductor… Expand
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2013
2013
Abstract Atomic layer etching (ALE) has been applied to the high-k dielectric patterning in complementary metal–oxide… Expand
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Highly Cited
2012
Highly Cited
2012
Abstract The possibility of fabricating a full graphene device was investigated by utilizing atomic layer etching (ALET… Expand
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2011
2011
The layers of exfoliation graphene obtained by scotch taping of highly oriented pyrolythic graphite could be controlled precisely… Expand
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2010
2010
A system and method for fast atomic layer etching (ALET), has a pulsed plasma source, a reaction chamber. Plasma source includes… Expand
Highly Cited
1996
Highly Cited
1996
An experimental system and methodology were developed to realize dry etching of single crystal silicon with monolayer accuracy… Expand
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Highly Cited
1995
Highly Cited
1995
A molecular dynamics study of 50 eV Ar+ ion bombardment of a Si(100) crystal with a monolayer of adsorbed chlorine was conducted… Expand
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