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Atomic layer etching

Atomic layer etching is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical… Expand
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Papers overview

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2017
2017
Atomic layer etching (ALE) could be an important next-generation etching technique, applicable to various semiconductor materials… Expand
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2017
2017
The atomic layer etching (ALE) of ZnO thin films was demonstrated using sequential, self-limiting thermal reactions with hydrogen… Expand
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2017
2017
Current (and future) microelectronics fabrication requirements place unprecedented demands on the fidelity of plasma etching. As… Expand
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2015
2015
Conventional (3D) etching in silicon is often based on the ‘Bosch’ plasma etch with alternating half-cycles of a directional… Expand
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2015
2015
The atomic layer etching (ALEt) of HfO2 was performed using sequential, self-limiting thermal reactions with tin(II… Expand
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2013
2013
BeO was investigated as the interface passivation layer (IPL) between a high-k dielectric and a III-V compound semiconductor… Expand
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2012
2012
Abstract The possibility of fabricating a full graphene device was investigated by utilizing atomic layer etching (ALET… Expand
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2011
2011
The layers of exfoliation graphene obtained by scotch taping of highly oriented pyrolythic graphite could be controlled precisely… Expand
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1996
1996
An experimental system and methodology were developed to realize dry etching of single crystal silicon with monolayer accuracy… Expand
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1995
1995
A molecular dynamics study of 50 eV Ar+ ion bombardment of a Si(100) crystal with a monolayer of adsorbed chlorine was conducted… Expand
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