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High-κ dielectric
Known as:
High-k dielectric
, High-k
, High-k Metals
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The term high-κ dielectric refers to a material with a high dielectric constant κ (as compared to silicon dioxide). High-κ dielectrics are used in…
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16 relations
Antenna effect
Apple A7
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Broader (1)
Electronic engineering
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates
J. Moon
,
D. Curtis
,
+9 authors
D. Gaskill
IEEE Electron Device Letters
2009
Corpus ID: 27018931
We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect…
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Highly Cited
2008
Highly Cited
2008
A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
S. Natarajan
,
M. Armstrong
,
+40 authors
K. Zhang
IEEE International Electron Devices Meeting
2008
Corpus ID: 27551897
A 32 nm generation logic technology is described incorporating 2nd-generation high-k + metal-gate technology, 193 nm immersion…
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Highly Cited
2006
Highly Cited
2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
J. Goldberger
,
A. Hochbaum
,
R. Fan
,
P. Yang
2006
Corpus ID: 11642569
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub…
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Review
2006
Review
2006
Overview and status of metal S/D Schottky-barrier MOSFET technology
J. Larson
,
J. Snyder
IEEE Transactions on Electron Devices
2006
Corpus ID: 1516723
In this paper, the metal source/drain (S/D) Schottky-barrier (SB) MOSFET technology is reviewed. The technology offers several…
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Review
2005
Review
2005
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
Thomas Skotnicki
,
J. Hutchby
,
Tsu-Jae King
,
H.-S. Philip Wong
,
Frederic Boeuf
IEEE Circuits and Devices Magazine
2005
Corpus ID: 6389553
The rapid cadence of metal-oxide semiconductor field-effect transistor (MOSFET) scaling, as seen in the new 2003 International…
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Highly Cited
2004
Highly Cited
2004
Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor
H. Ng
,
Jie Han
,
Toshishige Yamada
,
P. Nguyen
,
Yi P. Chen
,
M. Meyyappan
2004
Corpus ID: 18315211
Harnessing the potential of single crystal inorganic nanowires for practical advanced nanoscale applications requires not only…
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Highly Cited
2004
Highly Cited
2004
Magneto-dielectrics in electromagnetics: concept and applications
Hossein Mosallaei
,
Kamal Sarabandi
IEEE Transactions on Antennas and Propagation
2004
Corpus ID: 868217
In this paper, the unique features of periodic magneto-dielectric meta-materials in electromagnetics are addressed. These…
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Highly Cited
2004
Highly Cited
2004
Optical Waveguide Theory and Numerical Modelling
Belgium Proceedings
,
P. Bienstman
,
+158 authors
J. Marti
2004
Corpus ID: 51778756
Efficient coupling into and out of photonic crystal (PhC) circuits is one of the main challenges to achieve reliable micro-scale…
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Highly Cited
2004
Highly Cited
2004
Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
Wenjuan Zhu
,
Jin-Ping Han
,
T. Ma
IEEE Transactions on Electron Devices
2004
Corpus ID: 44350455
Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs with HfO/sub 2/ as the gate dielectric have…
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Highly Cited
2004
Highly Cited
2004
All jet-printed polymer thin-film transistor active-matrix backplanes
A. Arias
,
S. Ready
,
+9 authors
B. Ong
2004
Corpus ID: 123645770
Thin-film transistor (TFT) backplanes fabricated by using jet printing as the only patterning method are reported. Additive and…
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