Anthony Lochtefeld

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Magnetic information storage density has increased at the rate of 60% per year for the past seven years. There is wide agreement that continuation of this trend beyond the physical limits of the continuous thin-film media currently used will likely require a transition to discrete, lithographically defined magnetic pillars. Interference lithography ~IL!(More)
High quality GaAs epilayers grown by metal-organic chemical vapor deposition are demonstrated on a SiO2-patterned silicon substrate using aspect ratio trapping technique, whereby threading dislocations from lattice mismatch are largely reduced via trapping in SiO2 trenches during growth. A depletion-mode metal-oxide-semiconductor field-effect transistor(More)
An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell’s theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and(More)
This paper presents the characterization and analysis of a 16.8%-efficient 18 um silicon solar cell on steel substrate. Photoluminescence (PL) is used to monitor the solar cell’s fabrication step by step, and a correlation between PL intensity and implied open circuit voltage is established. PL images yield spatially resolved maps of key electrical(More)
We report on performance and scalability for strained Si CMOS devices with Lgate down to 25nm, 1.2nm nitrided oxide and NiSi. Good control of short channel effects was achieved. NiSi was found to be superior to CoSi2 for strained Si devices. Electron mobility enhancement resulted in significant Idsat improvement for long channel NMOS. Due to high doping and(More)
Inverse modeling of state-of-the-art NMOSFETs is used to investigate electron transport models and in particular to extract the effective velocity of electron injection from source to channel. It is found that this velocity is less than 50% of the maximum possible velocity, i.e. the thermal velocity of electrons in the source. Based on the Landauer(More)
Nitza M. Basoco, David Berman, Aleksandr Bernshteyn, Carl G. Chen, Alexei A. Erchak, Maya S. Farhoud, Juan Ferrera, Darío Gil, Yaowu Hao, Jeffrey T. Hastings, Min-ha Hwang, Keith M. Jackson, M. Jalal Khan, Paul T. Konkola, Michael H. Lim, Anthony J. Lochtefeld, Mitchell W. Meinhold, Rajesh Menon, Euclid E. Moon, Thomas E. Murphy, David G. Pflug, Kevin P.(More)