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Magnetic information storage density has increased at the rate of 60% per year for the past seven years. There is wide agreement that continuation of this trend beyond the physical limits of the continuous thin-film media currently used will likely require a transition to discrete, lithographically defined magnetic pillars. Interference lithography ͑IL͒(More)
An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell's theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and(More)
—This paper presents the characterization and analysis of a 16.8%-efficient 18 um silicon solar cell on steel substrate. Photoluminescence (PL) is used to monitor the solar cell's fabrication step by step, and a correlation between PL intensity and implied open circuit voltage is established. PL images yield spatially resolved maps of key electrical(More)
MOSFET scaling and performance has progressed rapidly in recent years, with physical gate lengths for electrostatically sound devices reaching 30 nm or below: near the prospective scaling limits for traditional bulk MOSFETs. This work investigates several key issues for this "end of roadmap" regime. Focus is on understanding the limitations to carrier(More)
We report on performance and scalability for strained Si CMOS devices with Lgate down to 25nm, 1.2nm nitrided oxide and NiSi. Good control of short channel effects was achieved. NiSi was found to be superior to CoSi 2 for strained Si devices. Electron mobility enhancement resulted in significant Idsat improvement for long channel NMOS. Due to high doping(More)
The Nanostructures Laboratory (NSL) at MIT develops techniques for fabricating surface structures with feature sizes in the range from nanometers to micrometers and uses these structures in a variety of research projects. The NSL includes facilities for lithography (photo, interferometric, electron-beam, and x-ray), etching (chemical, plasma and(More)
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