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Magnetic information storage density has increased at the rate of 60% per year for the past seven years. There is wide agreement that continuation of this trend beyond the physical limits of the continuous thin-film media currently used will likely require a transition to discrete, lithographically defined magnetic pillars. Interference lithography ͑IL͒(More)
An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell's theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and(More)
—This paper presents the characterization and analysis of a 16.8%-efficient 18 um silicon solar cell on steel substrate. Photoluminescence (PL) is used to monitor the solar cell's fabrication step by step, and a correlation between PL intensity and implied open circuit voltage is established. PL images yield spatially resolved maps of key electrical(More)
MOSFET scaling and performance has progressed rapidly in recent years, with physical gate lengths for electrostatically sound devices reaching 30 nm or below: near the prospective scaling limits for traditional bulk MOSFETs. This work investigates several key issues for this "end of roadmap" regime. Focus is on understanding the limitations to carrier(More)
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