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Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/ In0.05Ga0.95N (6 nm) multiple quantum wells, by employing transmission electron microscopy andExpand
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Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells
Dynamical behavior of radiative recombination has been assessed in the ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N (2.5 nm)/ ${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N (6.0 nm)Expand
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Self-organized ZnO quantum dots on SiO2/Si substrates by metalorganic chemical vapor deposition
ZnO quantum dots (QDs) were fabricated on SiO2/Si substrates by metalorganic chemical vapor deposition. The densities and sizes of dots were investigated by atomic force microscopy. PhotoluminescenceExpand
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Dimensionality of excitons in laser-diode structures composed of In x Ga 1-x N multiple quantum wells
Temperature dependence of radiative and nonradiative lifetimes of localized excitons has been assessed in the laser diode structures composed of ${\mathrm{In}}_{0.20}{\mathrm{Ga}}_{0.80}\mathrm{N}$Expand
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Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys (x≃ 0.5) and Their Application to Solar-Blind Region Photodetectors
A series of single-phase wurzite MgxZn1-xO alloys from x=0 to 0.5 were successfully obtained by molecular beam epitaxial growth on sapphire substrates, resulting in artificial tuning of band gapExpand
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Confocal microphotoluminescence of InGaN-based light-emitting diodes
Spatially resolved photoluminescence (PL) of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber light (600 nm) was measured byExpand
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Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
Radiative and nonradiative recombination processes have been studied in ultraviolet In0.02Ga0.98N light-emitting diodes (LEDs), by employing photoinduced voltage, electroreflectance, andExpand
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Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy
A series of wurtzite MgZnO quasi-ternary alloys, which consist of wurtzite MgO∕ZnO superlattices, were grown by molecular-beam epitaxy on sapphire substrates. By changing the thicknesses of ZnOExpand
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Photoluminescence in ZnSe grown by liquid‐phase epitaxy from Zn‐Ga solution
Photoluminescence has been studied of epitaxial ZnSe layers grown from a pure Zn or a Zn‐Ga alloy solution on ZnSxSe1−x (0⩽x⩽1) single‐crystalline substrates. Intense blue emission bands at roomExpand
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Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlyingExpand
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