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- Publications
- Influence
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
- Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura
- Physics
- 24 February 1997
Structural analysis was performed on a purple laser diode composed of In0.20Ga0.80N (3 nm)/ In0.05Ga0.95N (6 nm) multiple quantum wells, by employing transmission electron microscopy and… Expand
Recombination dynamics of localized excitons in In 0.20 Ga 0.80 N- In 0.05 Ga 0.95 N multiple quantum wells
- Y. Narukawa, Y. Kawakami, S. Fujita, S. Fujita, S. Nakamura
- Physics
- 15 January 1997
Dynamical behavior of radiative recombination has been assessed in the ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N (2.5 nm)/ ${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N (6.0 nm)… Expand
Self-organized ZnO quantum dots on SiO2/Si substrates by metalorganic chemical vapor deposition
ZnO quantum dots (QDs) were fabricated on SiO2/Si substrates by metalorganic chemical vapor deposition. The densities and sizes of dots were investigated by atomic force microscopy. Photoluminescence… Expand
Dimensionality of excitons in laser-diode structures composed of In x Ga 1-x N multiple quantum wells
- Y. Narukawa, Y. Kawakami, S. Fujita, S. Nakamura
- Physics
- 15 April 1999
Temperature dependence of radiative and nonradiative lifetimes of localized excitons has been assessed in the laser diode structures composed of ${\mathrm{In}}_{0.20}{\mathrm{Ga}}_{0.80}\mathrm{N}$… Expand
Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys (x≃ 0.5) and Their Application to Solar-Blind Region Photodetectors
A series of single-phase wurzite MgxZn1-xO alloys from x=0 to 0.5 were successfully obtained by molecular beam epitaxial growth on sapphire substrates, resulting in artificial tuning of band gap… Expand
Confocal microphotoluminescence of InGaN-based light-emitting diodes
- K. Okamoto, A. Kaneta, +4 authors T. Mukai
- Materials Science
- 15 September 2005
Spatially resolved photoluminescence (PL) of InGaN/GaN/AlGaN-based quantum-well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber light (600 nm) was measured by… Expand
Radiative and nonradiative recombination processes in ultraviolet light-emitting diode composed of an In0.02Ga0.98N active layer
- Y. Narukawa, Shin Saijou, Y. Kawakami, S. Fujita, T. Mukai, S. Nakamura
- Physics
- 20 January 1999
Radiative and nonradiative recombination processes have been studied in ultraviolet In0.02Ga0.98N light-emitting diodes (LEDs), by employing photoinduced voltage, electroreflectance, and… Expand
Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy
A series of wurtzite MgZnO quasi-ternary alloys, which consist of wurtzite MgO∕ZnO superlattices, were grown by molecular-beam epitaxy on sapphire substrates. By changing the thicknesses of ZnO… Expand
Photoluminescence in ZnSe grown by liquid‐phase epitaxy from Zn‐Ga solution
- S. Fujita, H. Mimoto, T. Noguchi
- Physics
- 1 February 1979
Photoluminescence has been studied of epitaxial ZnSe layers grown from a pure Zn or a Zn‐Ga alloy solution on ZnSxSe1−x (0⩽x⩽1) single‐crystalline substrates. Intense blue emission bands at room… Expand
Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy GroWn ZnO Layer as a Substrate : Semiconductors
- K. Ogata, T. Kawanishi, K. Maejima, K. Sakurai, S. Fujita, S. Fujita
- Physics
- 1 July 2001
Zinc oxide (ZnO) of high quality was homoepitaxially grown by metal-organic vapor phase epitaxy (MOVPE) on molecular beam epitaxy (MBE)-grown ZnO layers after the pretreatment of the underlying… Expand