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Epitaxial wafer

Known as: Epi wafer, Epi-wafer, Epiwafer 
An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use… 
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Related topics

Related topics

6 relations
EpitaxyMolecular beam epitaxySemiconductorSolar cell

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2010
2010
A free-space method for measurement of complex permittivity of double-layer dielectric materials at microwave frequencies
Two methods for the calculation of complex permittivity of double-layer dielectric materials measured by a spot-focusing free… 
2010
2010
Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors
In this work newly developed 4" GaSb substrates are investigated for their suitability in the epitaxial growth of type II InAs… 
2009
2009
Ultra-low on-resistance LDMOS implementation in 0.13µm CD and BiCD process technologies for analog power IC's
Toshiba's 5th generation BiCD/CD-0.13 is a new process platform for analog power applications based on 0.13µm CMOS technology… 
2009
2009
Effect of oxide aperture on the performance of 850 nm vertical-cavity surface-emitting lasers
2009
2009
Study of devices leakage of 45nm node with different SRAM layouts using an advanced e-beam inspection systems
In this study, a nickel silicide (NiSi) wafer and a WCMP wafer were used. We captured bright voltage contract (BVC) defects at N… 
2006
2006
Economy of Scale Effects for Large Wafer Fabs
  • O. Rose
  • Proceedings of the Winter Simulation Conference
  • 2006
  • Corpus ID: 32524586
In this paper, we present the results of a simulation study for semiconductor wafer fabrication facilities (wafer fabs) where we… 
2005
2005
Use of excimer laser test system for studying haze growth
With the use of 193nm lithography, haze growth has increased and become a critical issue for photomask suppliers and wafer fabs… 
2004
2004
Crosstalk improvement technology applicable to 0.14/spl mu/m CMOS image sensor
For pixel crosstalk improvement, modified logic technology with thin epi wafer thickness, thin backend process thickness and air… 
2004
2004
Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs
The Aerial Image Measurement System (AIMS)* for 193 nm lithography emulation has been brought into operation successfully… 
1991
1991
Emissivity of silicon wafers during rapid thermal processing
The emissivity of silicon wafers was measured for two specfic conditions. Firstly the emissivity of silicon wafers below 700 C… 
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