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Silicon on sapphire

Known as: SOS (disambiguation), Silicon-on-sapphire 
Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0… 
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Papers overview

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2012
2012
A simple, easy and relatively inexpensive liquid phase deposition (LPD) method was used to introduce nano SiO2 on sapphire… 
2009
2009
We demonstrate 50 Gbit/s modulation using four silicon microring modulators within a footprint of 500 µm2. This is the highest… 
Highly Cited
2001
Highly Cited
2001
we report on a hybrid integration approach that represents a paradigm shift from traditional optoelectronic integration and… 
2001
2001
m displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V… 
2000
2000
The next generation microprocessor assemblies will require integrated thermal management design solutions as the device density… 
1999
1999
High-density microelectronics require packaging materials and systems that provide superior thermal management and highly… 
1997
1997
A highly sensitive system based on a sapphire dielectric resonator has been developed to investigate the microwave properties of… 
1972
1972
Complementary MOS silicon-on-sapphire inverters fabricated using silicon-gate technology and 5-/spl mu/m channel-length devices… 
1967
1967
Complementary MOS circuitry offers the advantages of high-speed, low-quiescent power dissipation, and loose device parameter…