Salicide

The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and… (More)
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Papers overview

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2009
2009
The two steps RTP program for 32nm NiPt silicide formation process has been evaluated to improve source-drain resistance (Rsd… (More)
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2002
2002
A novel nickel self-aligned silicide (SALICIDE) process technology has been developed for CMOS devices with physical gate length… (More)
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2001
2001
A novel substrate-triggered technique, as comparing to the traditional gate-driven technique, is proposed to effectively improve… (More)
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2001
2001
35 nm gate length CMOS devices with oxynitride gate dielectric and Ni SALICIDE have been fabricated to study the feasibility of… (More)
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1999
1999
Recently, to realize a high performance deca-nano scaled MOSFET, we reported a new MOSFET fabrication process named the "2-step… (More)
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1997
1997
A novel programmable element has been developed and evaluated for state of the art CMOS processes. This element is based on… (More)
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1996
1996
The fundamental issues for extension of a Ti salicide process to 0.1 /spl mu/m gate length CMOS technologies are presented for… (More)
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1991
1991
A submicrometer CMOS technology with MOSFET structures consisting of a TiN-strapped polysilicon gate electrode and self-aligned… (More)
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1989
1989
A reverse short-channel effect on threshold voltage caused by the self-aligned silicide process in submicrometer MOSFETs is… (More)
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1989
1989
The isolation integrity of various gate-spacer thicknesses in 15-20- mu m-wide MOS devices with and without titanium salicide is… (More)
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