Polycide

Polycide is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the… (More)
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SalicideTransistor

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Semiconductor device fabrication

Papers overview

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2014
2014
Polycide contact interface to suppress squegging in micromechanical resoswitches
The use of a Pt-silicide-based contact interface has greatly reduced impact-induced energy loss in comb-driven resonant… (More)
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2005
2005
Lifetime study for a poly fuse in a 0.35 /spl mu/m polycide CMOS process
Poly fuses are used as the base element for one time programmable cells in a standard CMOS process. Using a defined programming… (More)
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1996
1996
Low voltage operation of sub-quarter micron W-polycide dual gate CMOS with non-uniformly doped channel
A 0.25 /spl mu/m W-polycide dual gate CMOS has been newly developed for a logic in DRAM under low voltage operation. A novel gate… (More)
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1991
1991
Direct evidence of gate oxide thickness increase in tungsten polycide processes
The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and… (More)
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1991
1991
Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layers
The device degradation of dual-polycide-gate N/sup +//P/sup +/ CMOS polycide transistors due to the lateral diffusion of dopants… (More)
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1990
1990
Gate oxide integrity and hot-carrier degradation of TaSi2P+ polycide gate MOSFETs
In this contribution we report on boron doped TaSi2/polySi gates which provide low sheet resistance, the appropriate p… (More)
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1987
1987
Improvement of dielectric strength of TiSix-polycide-gate system by using rapidly nitrided oxides
We discuss two approaches to improve the dielectric strength of TiSix-polycide-gate systems which have a 100-nm-thick poly-Si and… (More)
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1987
1987
Electromigration of silicon and phosphorus in tantalum polycide interconnections
TaSi2/n+-poly-Si interconnections of integrated circuits were investigated after high direct current density stress at elevated… (More)
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1983
1983
Electrical characterization of the polycide sidewall profile
An electrical method for characterizing the polycide (i.e., silicide on top of poly-Si) side wall profile is presented. It is… (More)
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1983
1983
Electromigration Failure in Thin Film Silicides and Polysilicon/Silicide (Polycide) Structures
Thin film conductor stripes (150 nm thick), of silicides of tantalum and tungsten deposited on to thermal oxide as well as… (More)
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