Polycide

Polycide is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the… (More)
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2014
2014
The use of a Pt-silicide-based contact interface has greatly reduced impact-induced energy loss in comb-driven resonant… (More)
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2005
2005
Poly fuses are used as the base element for one time programmable cells in a standard CMOS process. Using a defined programming… (More)
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1996
1996
A 0.25 /spl mu/m W-polycide dual gate CMOS has been newly developed for a logic in DRAM under low voltage operation. A novel gate… (More)
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1991
1991
The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and… (More)
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1991
1991
The device degradation of dual-polycide-gate N/sup +//P/sup +/ CMOS polycide transistors due to the lateral diffusion of dopants… (More)
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1990
1990
In this contribution we report on boron doped TaSi2/polySi gates which provide low sheet resistance, the appropriate p… (More)
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1987
1987
We discuss two approaches to improve the dielectric strength of TiSix-polycide-gate systems which have a 100-nm-thick poly-Si and… (More)
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1987
1987
TaSi2/n+-poly-Si interconnections of integrated circuits were investigated after high direct current density stress at elevated… (More)
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1983
1983
An electrical method for characterizing the polycide (i.e., silicide on top of poly-Si) side wall profile is presented. It is… (More)
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1983
1983
Thin film conductor stripes (150 nm thick), of silicides of tantalum and tungsten deposited on to thermal oxide as well as… (More)
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