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The use of a Pt-silicide-based contact interface has greatly reduced impact-induced energy loss in comb-driven resonant… Expand Code voting provides an appropriate technology to address the secure platform problem of remote Internet voting, but it is not… Expand Abstract An abnormal gate oxide failure was found in DRAM using deep submicron technology. Contrary to the general dielectric… Expand ABSTRACT Direct simulation Monte Carlo was used to study ion and neutral transport and reaction in a low-gas-pressure highplasma… Expand A new process for tungsten gate metal oxide semiconductor (MOS) capacitors has been developed using chemical vapor deposition… Expand Formation of low resistance p+ contact was the most difficult problem for Dual(n+/p+) Polycide Interconnect by which both n… Expand The device degradation of dual-polycide-gate N/sup +//P/sup +/ CMOS polycide transistors due to the lateral diffusion of dopants… Expand The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and… Expand The lateral diffusion of dopants in a TiSi2 salicide process was studied for various BPSG reflow RTP anneals. Lateral diffusion… Expand Low-pressure chemical vapor deposition of tungsten silicide has been done and the properties of the deposited films have been… Expand