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Polycide

Polycide is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the… Expand
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Related topics

Related topics

3 relations
SalicideTransistor

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Polycide contact interface to suppress squegging in micromechanical resoswitches
The use of a Pt-silicide-based contact interface has greatly reduced impact-induced energy loss in comb-driven resonant… Expand
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2008
2008
CAPTCHA-based Code Voting
Code voting provides an appropriate technology to address the secure platform problem of remote Internet voting, but it is not… Expand
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2002
2002
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon
Abstract An abnormal gate oxide failure was found in DRAM using deep submicron technology. Contrary to the general dielectric… Expand
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1997
1997
Direct simulation Monte Carlo of inductively coupled plasma and comparison with experiments
ABSTRACT Direct simulation Monte Carlo was used to study ion and neutral transport and reaction in a low-gas-pressure highplasma… Expand
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1997
1997
A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process
A new process for tungsten gate metal oxide semiconductor (MOS) capacitors has been developed using chemical vapor deposition… Expand
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1992
1992
Dual (n+/p+) Polycide Interconnect Technology using poly-Si/WSiZ/poly-Si Structure and Post B+ Implantation
Formation of low resistance p+ contact was the most difficult problem for Dual(n+/p+) Polycide Interconnect by which both n… Expand
1991
1991
Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layers
The device degradation of dual-polycide-gate N/sup +//P/sup +/ CMOS polycide transistors due to the lateral diffusion of dopants… Expand
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1991
1991
Direct evidence of gate oxide thickness increase in tungsten polycide processes
The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and… Expand
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1989
1989
Avoiding Lateral Diffusion of Dopants in n+/p+ Polycide Gates
  • D. Amm, D. Levy, +4 authors G. Goltz
  • ESSDERC '89: 19th European Solid State Device…
  • 1989
    • Corpus ID: 36421257
The lateral diffusion of dopants in a TiSi2 salicide process was studied for various BPSG reflow RTP anneals. Lateral diffusion… Expand
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Highly Cited
1983
Highly Cited
1983
Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections
Low-pressure chemical vapor deposition of tungsten silicide has been done and the properties of the deposited films have been… Expand
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