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Polycide

Polycide is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the… 
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3 relations
SalicideTransistor

Broader (1)

Semiconductor device fabrication

Papers overview

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2005
2005
Lifetime study for a poly fuse in a 0.35 /spl mu/m polycide CMOS process
Poly fuses are used as the base element for one time programmable cells in a standard CMOS process. Using a defined programming… 
2002
2002
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon
1997
1997
Direct simulation Monte Carlo of inductively coupled plasma and comparison with experiments
ABSTRACT Direct simulation Monte Carlo was used to study ion and neutral transport and reaction in a low-gas-pressure highplasma… 
1997
1997
A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process
A new process for tungsten gate metal oxide semiconductor (MOS) capacitors has been developed using chemical vapor deposition… 
1997
1997
0.25/spl mu/m W-polycide Dual Gate And Buried Metal On Diffusion Layer (BMD) Technology For DRAM-embedded Logic Devices
A 0.25pm logic process technology, which is suitable for high-speed, low-voltage operation, logic and DRAM integration in one… 
1992
1992
Dual (n+/p+) Polycide Interconnect Technology using poly-Si/WSiZ/poly-Si Structure and Post B+ Implantation
Formation of low resistance p+ contact was the most difficult problem for Dual(n+/p+) Polycide Interconnect by which both n… 
1991
1991
Technology limitations for N/sup +//P/sup +/ polycide gate CMOS due to lateral dopant diffusion in silicide/polysilicon layers
The device degradation of dual-polycide-gate N/sup +//P/sup +/ CMOS polycide transistors due to the lateral diffusion of dopants… 
1991
1991
Direct evidence of gate oxide thickness increase in tungsten polycide processes
The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and… 
1989
1989
Avoiding Lateral Diffusion of Dopants in n+/p+ Polycide Gates
The lateral diffusion of dopants in a TiSi2 salicide process was studied for various BPSG reflow RTP anneals. Lateral diffusion… 
1983
1983
Electromigration Failure in Thin Film Silicides and Polysilicon/Silicide (Polycide) Structures
Thin film conductor stripes (150 nm thick), of silicides of tantalum and tungsten deposited on to thermal oxide as well as… 
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