Direct evidence of gate oxide thickness increase in tungsten polycide processes

Abstract

The increase of the effective gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide were analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and… (More)

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