A Novel Low Leakage-Current Ni SALICIDE Process in nMOSFETs on Si(110) Substrate


A novel low leakage-current Ni SALICIDE process in nMOSFETs on Si(110) is proposed. It is found for the first time that the anomalous off-state leakage-current (I<sub>off</sub>) in nMOSFETs on Si(110) is caused due to the inherent Ni silicide encroachment toward the channel region. Especially, &lt;110&gt; channel on Si(110) has fatal defect for CMOS… (More)


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