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Island growth

Island growth is a physical model of deposited film growth and chemical vapor deposition. Consider a situation where atoms are being deposited onto a… 
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Related topics

Related topics

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Chemical vapor depositionEpitaxyMolecular beam epitaxySputter deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Investigations on the structural, morphological, optical and electrical properties of undoped and nanosized Zn-doped CdS thin films prepared by a simplified spray technique
CdS and Zn-doped CdS (CdS:Zn) thin films have been deposited on glass substrates by spray pyrolysis technique using a perfume… 
2009
2009
Toward metamorphic multijunction GaAsP/Si photovoltaics grown on optimized GaP/Si virtual substrates using anion-graded GaAsyP1-y buffers
Using migration enhanced epitaxy nucleation followed by molecular beam epitaxy bulk growth on pristine, intentionally offcut Si… 
2004
2004
Adsorption, initial growth and desorption kinetics of p-quaterphenyl on polycrystalline gold surfaces
2003
2003
Structural and electrical properties of polymorphic pentacene thin films
Due to its outstanding carrier transport capabilities the aromatic hydrocarbon pentacene is still one of the most promising out… 
Highly Cited
2003
Highly Cited
2003
Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
Highly Cited
2002
Highly Cited
2002
Growth and thermal properties of ultrathin cerium oxide layers on Rh( 1 1 1 )
Highly Cited
2002
Highly Cited
2002
Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is… 
1998
1998
On the diffusion of `hot' adsorbates: a non-monotonic distribution of single particle diffusion lengths for CO/Cu(111)
1996
1996
Initial growth stages of AlxGa1 − xP on epitaxial silicon
1994
1994
Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6
Surface morphological and compositional evolution during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source… 
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