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Hot-carrier injection
Known as:
Hot carrier
, Hot carriers injection
, Hot-carrier cell
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Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to…
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Related topics
Related topics
15 relations
Charge trap flash
EPROM
Electromigration
Electron hole
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Strong Visible‐Light Absorption and Hot‐Carrier Injection in TiO2/SrRuO3 Heterostructures
Sungki Lee
,
B. Apgar
,
L. Martin
2013
Corpus ID: 98642734
Correlated electron oxides prove a diverse landscape of exotic materials' phenomena and properties. One example of such a…
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Review
2012
Review
2012
Optical spectroscopy of graphene: From the far infrared to the ultraviolet
K. Mak
,
L. Ju
,
Feng Wang
,
T. Heinz
2012
Corpus ID: 52066056
Review
2008
Review
2008
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
G. Meneghesso
,
G. Verzellesi
,
+5 authors
E. Zanoni
IEEE transactions on device and materials…
2008
Corpus ID: 22079382
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests…
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Review
2005
Review
2005
Review on high-k dielectrics reliability issues
G. Ribes
,
J. Mitard
,
+5 authors
Gerard Ghibaudo
IEEE transactions on device and materials…
2005
Corpus ID: 14776980
High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the…
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Highly Cited
2005
Highly Cited
2005
Impact ionization MOS (I-MOS)-Part I: device and circuit simulations
K. Gopalakrishnan
,
P. Griffin
,
J. Plummer
IEEE Transactions on Electron Devices
2005
Corpus ID: 40260157
One of the fundamental problems in the continued scaling of transistors is the 60 mV/dec room temperature limit in the…
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Highly Cited
2003
Highly Cited
2003
Magnetically engineered spintronic sensors and memory
S. Parkin
,
Xin Jiang
,
C. Kaiser
,
A. Panchula
,
K. Roche
,
M. Samant
Proceedings of the IEEE
2003
Corpus ID: 61238789
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just…
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Highly Cited
2000
Highly Cited
2000
NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B. Eitan
,
Paolo Pavan
,
Ilan Bloom
,
E. Aloni
,
Aviv Frommer
,
D. Finzi
IEEE Electron Device Letters
2000
Corpus ID: 25401524
This paper presents a novel flash memory cell based on localized charge trapping in a dielectric layer and on a new read…
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Highly Cited
1985
Highly Cited
1985
Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
Chenming Hu
,
S. Tam
,
Fu-Chieh Hsu
,
P. Ko
,
T. Chan
,
K. Terrill
IEEE Transactions on Electron Devices
1985
Corpus ID: 32220433
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies…
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Highly Cited
1985
Highly Cited
1985
Hot-electron and hole-emission effects in short n-channel MOSFET's
K. Hofmann
,
C. Werner
,
W. Weber
,
G. Dorda
IEEE Transactions on Electron Devices
1985
Corpus ID: 3132539
This paper presents a comparison of hot-carrier degradation experiments with simulations of hot electron and hole emission into…
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Review
1976
Review
1976
A review of anomalous resistivity for the ionosphere
K. Papadopoulos
1976
Corpus ID: 33870101
This is a general review of anomalous resistivity with emphasis on its applicability in space and more specifically on…
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