Charge trap flash

Charge Trap Flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. The technology differs from the… (More)
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Topic mentions per year

Topic mentions per year

2005-2017
05101520052017

Papers overview

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2017
2017
Three-dimensional (3D) flash memory is emerging as an attractive solution to overcome the scaling bottleneck in sub-20 nanometer… (More)
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2013
2013
ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile… (More)
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2013
2013
Charge-trap Flash memory has been successfully productized in high volume for several technology generations. Two-bits-per-cell… (More)
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Review
2013
Review
2013
Technology scaling challenges for flash memory beyond 30 nm exacerbated as device fundamental limits are fast approaching… (More)
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Review
2009
Review
2009
This paper reviews recent advances in Charge Trap Flash (CTF) memories. CTFs are predicted to replace the traditional floating… (More)
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2009
2009
The simultaneous improvement in the erase and retention characteristics in a TANOS (TaN-Al<sub>2</sub>O<sub>3</sub>-Si<sub>3</sub… (More)
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2008
2008
The performance and reliability of charge trap flash with single and bi-layer Si-rich and N-rich nitride as the storage node is… (More)
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2006
2006
A new type of memory, paired FinFET charge trap memory is reported. It consists of two split silicon fins and insulator between… (More)
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2006
2006
Demands for the high-density non-volatile memory products have been growing explosively. For further scaling of flash memory… (More)
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2005
2005
We report the impact of high work-function (/spl Phi//sub M/) metal gate and high-K dielectrics on memory properties of NAND type… (More)
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