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EEPROM
Known as:
EEPROM memory chip
, Electrically alterable read-only memory
, E²PROM
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EEPROM (also written E2PROM and pronounced "e-e-prom", "double-e-prom" or "e-squared-prom") stands for electrically erasable programmable read-only…
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Related topics
Related topics
49 relations
AVR Butterfly
Advanced Communications Riser
Answer to reset
Ant Attack
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Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
An approach to security and privacy of RFID system for supply chain
Xingxin Gao
,
Zhe Xiang
,
Hao Wang
,
Jun Shen
,
Jian Huang
,
Song Song
IEEE International Conference on E-Commerce…
2004
Corpus ID: 15916460
Radio frequency identification (RFID) is expected to become pervasive and ubiquitous, as it can be embedded into everyday items…
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2003
2003
A complete model of E2PROM memory cells for circuit simulations
P. Pavan
,
L. Larcher
,
M. Cuozzo
,
P. Zuliani
,
A. Conte
IEEE Trans. Comput. Aided Des. Integr. Circuits…
2003
Corpus ID: 8711709
E/sup 2/PROM memory devices are widely used in embedded applications. For an efficient design flow, a correct modeling of these…
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2000
2000
Why Aren't Aid Organizations Better Learners?
E. Berg
2000
Corpus ID: 155621237
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
I. Kelly
,
D. Keating
International Journal of Systems Science
1998
Corpus ID: 1088130
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the…
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1997
1997
Flight-Determined Subsonic Longitudinal Stability and Control Derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) With Thrust Vectoring
K. Iliff
,
K. Wang
1997
Corpus ID: 109422168
The subsonic longitudinal stability and control derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) are…
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Review
1986
Review
1986
Comparison and trends in today's dominant E2technologies
S. Lai
,
V. Dham
,
D. Guterman
International Electron Devices Meeting
1986
Corpus ID: 22882480
This paper reviews the three dominant E2technologies today, namely the two floating gate approaches of thin tunnel oxide and…
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Highly Cited
1983
Highly Cited
1983
A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
E. Suzuki
,
H. Hiraishi
,
K. Ishii
,
Y. Hayashi
IEEE Transactions on Electron Devices
1983
Corpus ID: 31589165
Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than…
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1981
1981
Reliability Aspects of a Floating Gate E2 PROM
B. Euzent
,
N. Boruta
,
J. Lee
,
C. Jenq
IEEE International Reliability Physics Symposium
1981
Corpus ID: 41116025
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown…
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1981
1981
A high density floating-gate EEPROM cell
J. Yeargain
,
C. Kuo
International Electron Devices Meeting
1981
Corpus ID: 35780115
An electrically erasable PROM cell is described which is implemented in a N-channel double polysilicon gate process. The cell is…
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Highly Cited
1980
Highly Cited
1980
A 16Kb electrically erasable nonvolatile memory
W. Johnson
,
G. Perlegos
,
A. Renninger
,
G. Kuhn
,
T. Ranganath
IEEE International Solid-State Circuits…
1980
Corpus ID: 44313709
A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons…
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