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EEPROM

Known as: EEPROM memory chip, Electrically alterable read-only memory, E²PROM 
EEPROM (also written E2PROM and pronounced "e-e-prom", "double-e-prom" or "e-squared-prom") stands for electrically erasable programmable read-only… 
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Related topics

Related topics

49 relations
AVR ButterflyAdvanced Communications RiserAnswer to resetAnt Attack

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
High-Efficiency Differential RF Front-End for a Gen2 RFID Tag
This brief proposes the analysis and design of a high-efficiency differential radio-frequency (RF) front-end for electronic… 
Highly Cited
2004
Highly Cited
2004
An approach to security and privacy of RFID system for supply chain
Radio frequency identification (RFID) is expected to become pervasive and ubiquitous, as it can be embedded into everyday items… 
2003
2003
A complete model of E2PROM memory cells for circuit simulations
E/sup 2/PROM memory devices are widely used in embedded applications. For an efficient design flow, a correct modeling of these… 
2000
2000
Why Aren't Aid Organizations Better Learners?
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the… 
1997
1997
Flight-Determined Subsonic Longitudinal Stability and Control Derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) With Thrust Vectoring
The subsonic longitudinal stability and control derivatives of the F-18 High Angle of Attack Research Vehicle (HARV) are… 
Highly Cited
1991
Highly Cited
1991
Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on Si 
Highly Cited
1983
Highly Cited
1983
A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than… 
1981
1981
Reliability Aspects of a Floating Gate E2 PROM
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown… 
Highly Cited
1980
Highly Cited
1980
A 16Kb electrically erasable nonvolatile memory
A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons… 
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