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EEPROM
Known as:
EEPROM memory chip
, Electrically alterable read-only memory
, E²PROM
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EEPROM (also written E2PROM and pronounced "e-e-prom", "double-e-prom" or "e-squared-prom") stands for electrically erasable programmable read-only…
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Related topics
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49 relations
AVR Butterfly
Advanced Communications Riser
Answer to reset
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Broader (1)
Non-volatile memory
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Reliability of NiO-Based Resistive Switching Memory (ReRAM) Elements with Pillar W Bottom Electrode
A. Demolliens
,
C. Muller
,
+6 authors
D. Ielmini
IEEE International Memory Workshop
2009
Corpus ID: 29674094
As Flash memories are approaching their ultimate scaling limit, reversible resistance switching attracts considerable interest…
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2000
2000
Why Aren't Aid Organizations Better Learners?
E. Berg
2000
Corpus ID: 155621237
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
I. Kelly
,
D. Keating
International Journal of Systems Science
1998
Corpus ID: 1088130
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the…
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Review
1996
Review
1996
Arithmetic co-processors for public-key cryptography: The state of the art
D. Naccache
,
David M'Raïhi
Smart Card Research and Advanced Application…
1996
Corpus ID: 5452198
Smart-cards have the tremendous advantage, over their magnetic stripe ancestors, of being able to execute cryptographic…
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1987
1987
Reliability Comparison of Flotox and Textured-Polysilicon E2PROMs
Neal Mielke
,
A. Fazio
,
H. Liou
IEEE International Reliability Physics Symposium
1987
Corpus ID: 23971665
The leading E2PROM technologies are FLOTOX and textured polysilicon. Both store data as charge on a floating gate, and both use…
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Review
1986
Review
1986
Comparison and trends in today's dominant E2technologies
S. Lai
,
V. Dham
,
D. Guterman
International Electron Devices Meeting
1986
Corpus ID: 22882480
This paper reviews the three dominant E2technologies today, namely the two floating gate approaches of thin tunnel oxide and…
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1985
1985
Studies of thin poly Si oxides for E and E2PROM
T. Ono
,
T. Mori
,
T. Ajioka
,
T. Takayashiki
International Electron Devices Meeting
1985
Corpus ID: 33100661
Electrical conductivity of thin poly Si oxides, 400-600A thick, has been investigated. Using an annealing prior to the oxidation…
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Highly Cited
1983
Highly Cited
1983
A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
E. Suzuki
,
H. Hiraishi
,
K. Ishii
,
Y. Hayashi
IEEE Transactions on Electron Devices
1983
Corpus ID: 31589165
Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than…
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1981
1981
Reliability Aspects of a Floating Gate E2 PROM
B. Euzent
,
N. Boruta
,
J. Lee
,
C. Jenq
IEEE International Reliability Physics Symposium
1981
Corpus ID: 41116025
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown…
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Highly Cited
1980
Highly Cited
1980
A 16Kb electrically erasable nonvolatile memory
W. Johnson
,
G. Perlegos
,
A. Renninger
,
G. Kuhn
,
T. Ranganath
IEEE International Solid-State Circuits…
1980
Corpus ID: 44313709
A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons…
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