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EEPROM

Known as: EEPROM memory chip, Electrically alterable read-only memory, E²PROM 
EEPROM (also written E2PROM and pronounced "e-e-prom", "double-e-prom" or "e-squared-prom") stands for electrically erasable programmable read-only… 
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Related topics

Related topics

49 relations
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Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2003
2003
A complete model of E2PROM memory cells for circuit simulations
E/sup 2/PROM memory devices are widely used in embedded applications. For an efficient design flow, a correct modeling of these… 
1998
1998
Faster learning of control parameters through sharing experiences of autonomous mobile robots
This paper describes a learning algorithm for small autonomous mobile robots based on sets of fuzzy automata. The task of the… 
1993
1993
Sweep Strategies for a Sensory-driven, Behavior-based Vacuum Cleaning Agent
In the Machine Intelligence Laboratory, University of Florida, we have built a small autonomous robot and programmed it to… 
Highly Cited
1991
Highly Cited
1991
Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films
Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on Si 
1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this… 
1987
1987
Reliability Comparison of Flotox and Textured-Polysilicon E2PROMs
The leading E2PROM technologies are FLOTOX and textured polysilicon. Both store data as charge on a floating gate, and both use… 
Review
1986
Review
1986
Comparison and trends in today's dominant E2technologies
This paper reviews the three dominant E2technologies today, namely the two floating gate approaches of thin tunnel oxide and… 
1985
1985
Studies of thin poly Si oxides for E and E2PROM
Electrical conductivity of thin poly Si oxides, 400-600A thick, has been investigated. Using an annealing prior to the oxidation… 
Highly Cited
1983
Highly Cited
1983
A low-voltage alterable EEPROM with metal&#8212;oxide-nitride&#8212;oxide&#8212;semiconductor (MONOS) structures
Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than… 
1981
1981
Reliability Aspects of a Floating Gate E2 PROM
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown… 
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