Reliability Aspects of a Floating Gate E2 PROM
@article{Euzent1981ReliabilityAO, title={Reliability Aspects of a Floating Gate E2 PROM}, author={B. Euzent and N. Boruta and J. Lee and C. Jenq}, journal={19th International Reliability Physics Symposium}, year={1981}, pages={11-16} }
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown that Fowler-Nordheim tunneling used for programming does not affect data retention. Erase/write cycling has been shown to degrade device margins by only a small amount and is easily guardbanded. Erase/write cycling does contribute to a significant portion of the observed failure rate due to oxide breakdown under high field operation. Defect related charge loss has… CONTINUE READING
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