Reliability Aspects of a Floating Gate E2 PROM

  title={Reliability Aspects of a Floating Gate E2 PROM},
  author={Bruce Euzent and N. V. Boruta and Ji Hee Lee and Ching S. Jenq},
  journal={19th International Reliability Physics Symposium},
  • B. Euzent, N. Boruta, C. Jenq
  • Published 7 April 1981
  • Computer Science
  • 19th International Reliability Physics Symposium
This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown that Fowler-Nordheim tunneling used for programming does not affect data retention. Erase/write cycling has been shown to degrade device margins by only a small amount and is easily guardbanded. Erase/write cycling does contribute to a significant portion of the observed failure rate due to oxide breakdown under high field operation. Defect related charge loss has… 
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