• DOI:10.1109/IRPS.1981.362965
Corpus ID: 41116025

Reliability Aspects of a Floating Gate E2 PROM

@article{Euzent1981ReliabilityAO,
  title={Reliability Aspects of a Floating Gate E2 PROM},
  author={B. Euzent and N. Boruta and J. Lee and C. Jenq},
  journal={19th International Reliability Physics Symposium},
  year={1981},
  pages={11-16}
}

B. Euzent, N. Boruta, +1 author C. Jenq

Published 1981

Computer Science, Medicine

19th International Reliability Physics Symposium

This paper has discussed a number of E2PROM failure mechanisms for both erase/write cycling and data retention. It has been shown that Fowler-Nordheim tunneling used for programming does not affect data retention. Erase/write cycling has been shown to degrade device margins by only a small amount and is easily guardbanded. Erase/write cycling does contribute to a significant portion of the observed failure rate due to oxide breakdown under high field operation. Defect related charge loss has… CONTINUE READING

View on IEEE

doi.org

Save to Library

Create Alert

Cite

Launch Research Feed