A 16Kb electrically erasable nonvolatile memory
@article{Johnson1980A1E,
title={A 16Kb electrically erasable nonvolatile memory},
author={W. Johnson and G. Perlegos and A. Renninger and G. Kuhn and T. Ranganath},
journal={1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers},
year={1980},
volume={XXIII},
pages={152-153}
}A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons tunnel toward or away from a floating polysilicon gate, will be covered.
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