A 16Kb electrically erasable nonvolatile memory

@article{Johnson1980A1E,
  title={A 16Kb electrically erasable nonvolatile memory},
  author={W. Johnson and G. Perlegos and A. Renninger and G. Kuhn and T. Ranganath},
  journal={1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers},
  year={1980},
  volume={XXIII},
  pages={152-153}
}
  • W. Johnson, G. Perlegos, +2 authors T. Ranganath
  • Published 1980
  • Materials Science
  • 1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
  • A16K(2K×8) bit electrically-erasable nonvolatile memory (E2PROM) employing oxides less than 200 Å thick through which electrons tunnel toward or away from a floating polysilicon gate, will be covered. 
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