A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures

@article{Suzuki1983ALA,
  title={A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures},
  author={E. Suzuki and H. Hiraishi and K. Ishii and Y. Hayashi},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={122-128}
}
  • E. Suzuki, H. Hiraishi, +1 author Y. Hayashi
  • Published 1983
  • Physics
  • IEEE Transactions on Electron Devices
  • Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than conventional devices have been performed. The scaled-down metal-oxide-nitride-oxide-semiconductor (MONOS) structure is proposed to realize an extremely low-voltage programmable device. The proposed scaled-down MONOS devices enjoy several advantages over MNOS devices, e.g., enlargement of the memory window, elimination of degradation phenomena, and drastic improvement… CONTINUE READING
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