A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures

@article{Suzuki1983ALA,
  title={A low-voltage alterable EEPROM with metal\&\#8212;oxide-nitride\&\#8212;oxide\&\#8212;semiconductor (MONOS) structures},
  author={Eiichi Suzuki and Hisato Hiraishi and K. Ishii and Yutaka Hayashi},
  journal={IEEE Transactions on Electron Devices},
  year={1983},
  volume={30},
  pages={122-128}
}
Theoretical and experimental investigations to obtain lower voltage electrically erasable and programmable ROM's (EEPROM's) than conventional devices have been performed. The scaled-down metal-oxide-nitride-oxide-semiconductor (MONOS) structure is proposed to realize an extremely low-voltage programmable device. The proposed scaled-down MONOS devices enjoy several advantages over MNOS devices, e.g., enlargement of the memory window, elimination of degradation phenomena, and drastic improvement… 
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