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Magnetic Domain-Wall Racetrack Memory
The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Handbook of magnetism and advanced magnetic materials
VOLUME 1: Fundamentals and Theory Part 1: Electron Theory of Magnetism Density Functional Theory of Magnetism Hubbard Model Dynamical Mean Field Theory of Itinerant Electron Magnetism Quantum Monte
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
Sputter-deposited polycrystalline MTJs grown on an amorphous underlayer, but with highly oriented MgO tunnel barriers and CoFe electrodes, exhibit TMR values of up to ∼220% at room temperature and ∼300% at low temperatures, which will accelerate the development of new families of spintronic devices.
Chiral spin torque at magnetic domain walls.
An internal effective magnetic field arises from a Dzyaloshinskii-Moriya interaction at the Co/Pt interfaces and, in concert with spin Hall currents, drives the domain walls in lock-step along the nanowire.
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile
Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been
Domain-wall velocities of up to 750 m s(-1) driven by exchange-coupling torque in synthetic antiferromagnets.
It is shown that nanosecond-long current pulses can move domain walls in synthetic antiferromagnetic racetracks that have almost zero net magnetization, allowing for densely packed yet highly efficient domain-wall-based spintronics.
Current-Controlled Magnetic Domain-Wall Nanowire Shift Register
Using permalloy nanowires, the successive creation, motion, and detection of domain walls are achieved by using sequences of properly timed, nanosecond-long, spin-polarized current pulses.
Magnetically engineered spintronic sensors and memory
The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of
Role of transparency of platinum–ferromagnet interfaces in determining the intrinsic magnitude of the spin Hall effect
The spin Hall effect induces spin currents in nonmagnetic layers, which can control the magnetization of neighbouring ferromagnets. The transparency of the interface is shown to strongly influence