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Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure…
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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects characterized by time constants in the…
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Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by…
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A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of…
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A Review on the Reliability of GaN-Based LEDs
We review the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (LEDs). We propose a set of specific experiments, which is aimed at separately analyzing the…
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Editorial
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Reliability issues of Gallium Nitride High Electron Mobility Transistors
In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs),…
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Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparing experimental data with numerical device simulations. Under power- and OFF-state conditions, 150-h…
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Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence…
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Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been identified by means of accelerated testing of commercial devices from four different suppliers.…
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