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- Publications
- Influence
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
- G. Meneghesso, G. Verzellesi, +5 authors E. Zanoni
- Materials Science
- IEEE Transactions on Device and Materials…
- 10 June 2008
Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure… Expand
Surface-related drain current dispersion effects in AlGaN-GaN HEMTs
- G. Meneghesso, G. Verzellesi, +5 authors E. Zanoni
- Chemistry
- IEEE Transactions on Electron Devices
- 27 September 2004
Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects characterized by time constants in the… Expand
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
- D. Bisi, M. Meneghini, +6 authors E. Zanoni
- Materials Science
- IEEE Transactions on Electron Devices
- 5 September 2013
This paper critically investigates the advantages and limitations of the current-transient methods used for the study of the deep levels in GaN-based high-electron mobility transistors (HEMTs), by… Expand
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
- M. Meneghini, A. Tazzoli, G. Mura, G. Meneghesso, E. Zanoni
- Materials Science
- IEEE Transactions on Electron Devices
- 2010
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting diodes (LEDs). A number of reliability tests are presented, and specific degradation mechanisms of… Expand
A Review on the Reliability of GaN-Based LEDs
- M. Meneghini, L. Trevisanello, G. Meneghesso, E. Zanoni
- Materials Science
- IEEE Transactions on Device and Materials…
- 10 June 2008
We review the degradation mechanisms that limit the reliability of GaN-based light-emitting diodes (LEDs). We propose a set of specific experiments, which is aimed at separately analyzing the… Expand
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
- M. Faqir, G. Verzellesi, G. Meneghesso, E. Zanoni, F. Fantini
- Materials Science
- IEEE Transactions on Electron Devices
- 17 June 2008
High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparing experimental data with numerical device simulations. Under power- and OFF-state conditions, 150-h… Expand
Reliability issues of Gallium Nitride High Electron Mobility Transistors
- G. Meneghesso, M. Meneghini, +4 authors E. Zanoni
- Materials Science
- 1 February 2010
In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs),… Expand
Anomalous Kink Effect in GaN High Electron Mobility Transistors
- G. Meneghesso, F. Zanon, M. Uren, E. Zanoni
- Materials Science
- IEEE Electron Device Letters
- 1 February 2009
An anomalous kink effect has been observed in the room-temperature drain current ID versus drain voltage V DS characteristics of GaN high electron mobility transistors. The kink is originated by a… Expand
Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMTs induced by hot-electrons
- C. Canali, P. Cova, +4 authors E. Zanoni
- Engineering
- Proceedings of IEEE International Reliability…
- 4 April 1995
New failure mechanisms induced by hot-electrons in AlGaAs/InGaAs pseudomorphic HEMTs have been identified by means of accelerated testing of commercial devices from four different suppliers.… Expand
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
- G. Verzellesi, D. Saguatti, +4 authors E. Zanoni
- Physics
- 15 August 2013
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms taken into… Expand