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GgNMOS

Grounded-gate NMOS, commonly known as ggNMOS, is an electrostatic discharge (ESD) protection device used within CMOS integrated circuits (ICs). Such… 
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Related topics

Related topics

6 relations
CMOSParasitic structurePrinted circuit boardSemiconductor package

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Physics of Current Filamentation in ggNMOS Devices Under ESD Condition Revisited
This paper revisits the physics of current filamentation in grounded-gate NMOS (ggNMOS) devices and presents new physical… 
2015
2015
ESD characterization of diodes and ggMOS in Germanium FinFET technologies
Germanium as a high mobility material is a candidate to replace Silicon as channel material for future scaled FinFETs. This work… 
2013
2013
New GGNMOS I/O Cell Array for Improved Electrical Overstress Robustness
A 0.18-μm 3.3 V grounded-gate NMOS (GGNMOS) I/O cell array for timing controller (TCON) application is proposed for improving… 
2012
2012
ESD protection devices placed inside keep-out zone (KOZ) of through Silicon Via (TSV) in 3D stacked integrated circuits
Through Silicon Via (TSV) has been utilized in vertically stacking IC dice to implement real system-in-chip applications. However… 
2005
2005
AC Modeling of the ggNMOS ESD Protection Device
From AC analysis results utilizing a 2‐dimensional device simulator, we extracted an AC‐equivalent circuit of a grounded‐gate… 
2005
2005
ESD-RF co-design methodology for the state of the art RF-CMOS blocks
2003
2003
TLP analysis of 0.125 μm CMOS ESD input protection circuit
2003
2003
Investigation of thermal breakdown mechanism in 0. 13 /spl mu/m technology ggNMOS under ESD conditions
Transient device simulations reproducing conditions similar to Electro-Static Discharge (ESD) conditions have been performed for… 
2002
2002
Investigation of ESD performance in advanced CMOS technology
........................................................................................................... v Acknowledgments… 
2001
2001
ESD-Induced Circuit Performance Degradation in RFICs
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