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The design, prototyping, and characterization of a radiation pattern reconfigurable antenna (RA) targeting 5G communications are… Expand Found in many terahertz (THz) and submillimeter-wave systems, GaAs Schottky diodes continue to be one of the most useful THz… Expand Reported here is an analytical methodology for modeling the Cdv/dt induced false turn-on in SiC MOSFETs. A Cdv/dt test circuit is… Expand In telecom applications, the vision for a total power conversion efficiency from the mains to the output of point-of-load (PoL… Expand The vapor--liquid--solid growth of semiconductor nanowires led to the implementation of engineered electronic and optoelectronic… Expand A modeling approach using two-dimensional device simulations is presented, which enables the extraction of parameters for the… Expand In CMOS technologies, the layout and placement of devices and substrate contacts can have significant impact on the circuit's ESD… Expand The influence of different MOS and bipolar device parameters on the switching speed of a BiCMOS buffer is described. This… Expand A direct moat isolation approach which overcomes scalability limitation of local oxidation of silicon (LOCOS) is discussed. Short… Expand In a routine evaluation of an electrically identical Schottky diode made by two manufacturers, it was discovered that the diode… Expand