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Front end of line

Known as: FEOL, Front-end-of-line 
The front-end-of-line (FEOL) is the first portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) are… 
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Related topics

Related topics

12 relations
Back end of lineCMOSChemical-mechanical planarizationIntegrated circuit

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2019
2019
Robust alignment mark design for DRAM using a holistic computational approach
In advanced DRAM fabrication, wafer alignment is a key enabler to meet on-product overlay performance requirement. Due to the… 
2018
2018
Factor Analysis of Plasma-Induced Damage in Bulk FinFET Technology
In this letter, factor analysis is employed to investigate the hidden dependencies and correlations of plasma-induced damage with… 
2015
2015
Automatic obfuscated cell layout for trusted split-foundry design
We present split-cellTK, a tool that automates the obfuscation of split-foundry layout, in which an untrusted foundry fabricates… 
2015
2015
Beyond the Interconnections: Split Manufacturing in RF Designs
With the globalization of the integrated circuit (IC) design flow of chip fabrication, intellectual property (IP) piracy is… 
2013
2013
Effect of TSV presence on FEOL yield and reliability
In this work we evaluate the impact of TSV processing and proximity on transistor performance and reliability by monitoring key… 
2010
2010
Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies
At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic… 
2009
2009
Via first approach optimisation for Through Silicon Via applications
Through Silicon Via (TSV) is a very attractive solution for 3D stacking. Currently the main technique in industrial TSV processes… 
2009
2009
Polysilicon interconnections (FEOL): Fabrication and characterization
Three dimensional silicon integration technologies are gaining considerable attention as the traditional CMOS scaling becoming… 
2007
2007
Carbon / high-k Trench Capacitor for the 40nm DRAM Generation
Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application… 
2001
2001
Front-end-of-line process development using 193-nm lithography
It is expected that 193nm lithography will be introduced in front-end-of-line processing for all critical layers at the 100nm… 
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