Back end of line

Known as: BEOL 
The back end of line (BEOL) is the second portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) get… (More)
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Papers overview

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2016
2016
The influence of via density on the mechanical integrity of Back-End-Of-Line (BEOL) interconnects under Chip Package Interaction… (More)
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2014
2014
We introduce an approach that combines a 3” InP-DHBT transferred-substrate process with a SiGe-BiCMOS process. First, silicon and… (More)
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Highly Cited
2014
Highly Cited
2014
We present a fully integrated 14nm CMOS technology featuring finFET architecture on an SOI substrate for a diverse set of SoC… (More)
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2013
2013
The thermal resistances of thirty-nine different back end of line (BEOL) test sites consisting of four line levels and three via… (More)
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2013
2013
Vertically aligned carbon nanotubes (CNT) were fabricated using a novel CoAlcatalyst at substrate temperatures as low as 350°C… (More)
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2012
2012
Copper/low-k dielectrics are used in today's ICs to enhance electrical performance. The low-k interlayer dielectric (ILD… (More)
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2007
2007
Ultra low-k (ULK, k=2.4) dielectric has weaker mechanical properties than first generation low-k films (k=3.0). The introduction… (More)
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2006
2006
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The… (More)
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2005
2005
A surface micromachined capacitive pressure sensor was fabricated using conventional back-end of line (BEOL) processes in a… (More)
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2004
2004
CMOS back-end-of-line (BEOL) compatible MEMS resonators were fabricated via a low-temperature process flow. The exural-mode… (More)
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