Skip to search formSkip to main contentSkip to account menu

Back end of line

Known as: BEOL 
The back end of line (BEOL) is the second portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) get… 
Wikipedia (opens in a new tab)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
The trend of increasing digital system performance by downscaling the device size poses daunting challenges in system design due… 
Review
2007
Review
2007
This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the… 
2006
2006
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The… 
Review
2006
Review
2006
A novel Cu-Mn alloy has been developed to self-form a diffusion barrier layer at metal/dielectric interface without depositing a… 
Highly Cited
2005
Highly Cited
2005
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization… 
Highly Cited
2004
Highly Cited
2004
Programmable metallization cell (PMC) memory utilizes electrochemical control of nanoscale quantities of metal in thin films of… 
2004
2004
This paper describes the fabrication process of a fully working 6T-SRAM cell of 0.314/spl mu/m/sup 2/ build with tall triple gate… 
2002
2002
Low voltage operation in sub-0.25 /spl mu/m requirements mean that the simultaneous integration of all components on a single… 
Highly Cited
2001
Highly Cited
2001
35 nm gate length CMOS devices with oxynitride gate dielectric and Ni SALICIDE have been fabricated to study the feasibility of…