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Back end of line
Known as:
BEOL
The back end of line (BEOL) is the second portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) get…
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Related topics
Related topics
13 relations
Alpha 21064
Chemical vapor deposition
Chemical-mechanical planarization
Copper interconnect
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Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2019
Highly Cited
2019
Back-End-of-Line Compatible Transistors for Monolithic 3-D Integration
S. Datta
,
S. Dutta
,
B. Grisafe
,
Jeff Smith
,
S. Srinivasa
,
H. Ye
IEEE Micro
2019
Corpus ID: 207972022
The manufacturers of high-performance logic have been ardent champions of Moore's Law, which has resulted in exponential increase…
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Highly Cited
2013
Highly Cited
2013
Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric
T. Frank
,
S. Moreau
,
+7 authors
G. Poupon
Microelectronics and reliability
2013
Corpus ID: 22010881
Highly Cited
2012
Highly Cited
2012
22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL
Shreesh Narasimha
,
Paul Chang
,
+52 authors
P. Agnello
International Electron Devices Meeting
2012
Corpus ID: 27884515
We present a fully-integrated SOI CMOS 22nm technology for a diverse array of high-performance applications including server…
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Highly Cited
2011
Highly Cited
2011
3D copper TSV integration, testing and reliability
M. Farooq
,
T. Graves-abe
,
+16 authors
S. Iyer
International Electron Devices Meeting
2011
Corpus ID: 42496282
Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and…
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Highly Cited
2009
Highly Cited
2009
Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions
B. Sierawski
,
J. Pellish
,
+14 authors
C. Seidleck
IEEE Transactions on Nuclear Science
2009
Corpus ID: 21088791
Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported…
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Highly Cited
2006
Highly Cited
2006
A Logic Diagnosis Methodology for Improved Localization and Extraction of Accurate Defect Behavior
R. Desineni
,
O. Poku
,
R. D. Blanton
IEEE International Test Conference
2006
Corpus ID: 19055920
DIAGNOSIX is a comprehensive fault diagnosis methodology for characterizing failures in digital ICs. Using limited layout…
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2006
2006
Back-End-Of-Line Poly-Sige Disk Resonators
E. Quevy
,
Á. San Paulo
,
E. Basol
,
R. Howe
,
T. King
,
J. Bokor
19th IEEE International Conference on Micro…
2006
Corpus ID: 2669485
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The…
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Highly Cited
2006
Highly Cited
2006
3-D Silicon Integration and Silicon Packaging Technology Using Silicon Through-Vias
J. Knickerbocker
,
C. S. Patel
,
+8 authors
J. Cotte
IEEE Journal of Solid-State Circuits
2006
Corpus ID: 23756044
System-on-Chip (SOC) and System-on-Package (SOP) technologies each have advantages depending on application needs. As system…
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Highly Cited
2005
Highly Cited
2005
Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)
Anna W. Topol
,
D. La Tulipe
,
+24 authors
M. Ieong
IEEE InternationalElectron Devices Meeting…
2005
Corpus ID: 6795183
We present solutions to the key process technology challenges of three-dimensional (3D) integrated circuits (ICs) that enable…
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Highly Cited
2005
Highly Cited
2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
W. Lee
,
A. Waite
,
+76 authors
N. Kepler
IEEE InternationalElectron Devices Meeting…
2005
Corpus ID: 22372112
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization…
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