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Back end of line

Known as: BEOL 
The back end of line (BEOL) is the second portion of IC fabrication where the individual devices (transistors, capacitors, resistors, etc.) get… Expand
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Papers overview

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Highly Cited
2013
Highly Cited
2013
Abstract In this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies. First part… Expand
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Highly Cited
2012
Highly Cited
2012
We present a fully-integrated SOI CMOS 22nm technology for a diverse array of high-performance applications including server… Expand
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Highly Cited
2011
Highly Cited
2011
In this paper key design issues and considerations of a low-cost 3-D Cu-TSV technology are investigated. The impact of TSV on… Expand
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Highly Cited
2011
Highly Cited
2011
Node-agnostic Cu TSVs integrated with high-K/metal gate and embedded DRAM were used in functional 3D modules. Thermal cycling and… Expand
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Highly Cited
2009
Highly Cited
2009
  • C. Lin, S. Kang, +11 authors L. Tran
  • IEEE International Electron Devices Meeting (IEDM…
  • 2009
  • Corpus ID: 16949158
This paper reports a 45nm spin-transfer-torque (STT) MRAM embedded into a standard CMOS logic platform that employs low-power (LP… Expand
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Highly Cited
2009
Highly Cited
2009
Direct ionization from low energy protons is shown to cause upsets in a 65-nm bulk CMOS SRAM, consistent with results reported… Expand
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Highly Cited
2006
Highly Cited
2006
DIAGNOSIX is a comprehensive fault diagnosis methodology for characterizing failures in digital ICs. Using limited layout… Expand
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2006
2006
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The… Expand
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Highly Cited
2006
Highly Cited
2006
System-on-Chip (SOC) and System-on-Package (SOP) technologies each have advantages depending on application needs. As system… Expand
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Highly Cited
2005
Highly Cited
2005
We present solutions to the key process technology challenges of three-dimensional (3D) integrated circuits (ICs) that enable… Expand
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