Chemical-mechanical planarization

Known as: CMP, Chemical mechanical planarisation, Chemical mechanical polish 
Chemical mechanical polishing/planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be… (More)
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Topic mentions per year

Topic mentions per year

1950-2017
05019502016

Papers overview

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2011
2011
Potassium peroxymonosulfate (Oxone) was investigated as an oxidizing agent in silica based slurries for chemical mechanical… (More)
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2009
2009
Chemical Mechanical Planarization (CMP) is a vital process used in the semiconductor industry to isolate and connect individual… (More)
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2008
2008
In this article, we develop an analytical model of the relationship between the wafer/pad friction and process configuration. We… (More)
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2006
2006
  • George Calota
  • 2006
As feature size continues to decrease in microelectronics and integrated circuits, there is a greater need for global surface… (More)
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2004
2004
Chemical-mechanical planarization (CMP) is a synergistic tribological process. It occurs between a polymeric polishing pad, a… (More)
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2004
2004
Low abrasive content and much smaller mean particles of silica, alumina and ceria abrasives in new generation chemical mechanical… (More)
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2002
2002
Models based on slurry hydrodynamics, mass transport, and reaction kinetics are developed in order to predict the removal rate of… (More)
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2001
2001
Surface chemistry studies of the chemical mechanical planarization ~CMP! of copper are presented in this paper. Blanket copper… (More)
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2000
2000
We describe the chemical mechanical planarization (CMP) of copper damascene structures using an IC1400 pad and four different… (More)
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Highly Cited
2000
Highly Cited
2000
Chemical-mechanical polishing (CMP) is an enabling technique used in deep-submicron VLSI manufacturing to achieve uniformity in… (More)
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