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Deep-level trap

Known as: Deep-level defect, Trap 
Deep-level traps or deep-level defects are a generally undesirable type of electronic defect in semiconductors. They are "deep" in the sense that the… 
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Related topics

Related topics

6 relations
Copper interconnectDoping (semiconductor)Electron holePhosphor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Effects of Localized Back-Surface Defects on Bulk and Front-Channel Conduction of Amorphous InGaZnO TFTs
This paper investigated physical mechanisms underlying the effects of localized back-surface defects (D<sub>loc</sub>) on the… 
2016
2016
A Simulation Study of Carrier Transport Affected by Local Defects in Amorphous InGaZnO Thin-Film Transistors
This paper investigates effects of local defects on performances of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) by… 
2014
2014
First-principles study on the effects of the intrinsic defects in GaAs saturable absorber
First-principles calculations are performed for the effects of the intrinsic defects in GaAs saturable absorber, using the state… 
2014
2014
Properties of deep-level defect in Cu(In, Ga)Se 2 thin films
The properties of the deep-level defect which locates at around 0.8 eV above the valence band in Cu(In, Ga)Se2 thin films with… 
2014
2014
Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4 HSi C
2013
2013
Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals
Carrier trapping in colloidal nanocrystals represents a major energy loss mechanism for excitonic states crucial to devices… 
2011
2011
Wpływ zawartości płytkich domieszek na właściwości i koncentrację głębokich centrów defektowych w monokryształach SiC. Praca doktorska = Effect shallow impurities on the properties and concentrations…
2006
2006
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors
2004
2004
A control on the photoluminescence properties in P-passivated nanocrystalline ZnO films
1998
1998
Effect of a deep-level trap on hole transport in InAlAs/InGaAs metal-semiconductor-metal photodetectors
Summary form only given. InGaAs metal-semiconductor-metal (MSM) photodetectors with interdigital electrodes are promising for… 
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