• Publications
  • Influence
Thin film deposition of Cu2O and application for solar cells
Abstract Deposition conditions of cuprous oxide (Cu2O) thin films on glass substrates and nitrogen doping into Cu2O were studied by using reactive radio-frequency magnetron sputtering method. TheExpand
  • 315
  • 4
Role of surface electronic structure in thin film molecular ordering.
We show that the orientation of pentacene molecules is controlled by the electronic structure of the surface on which they are deposited. We suggest that the near-Fermi level density of states aboveExpand
  • 99
  • 1
  • PDF
Na-induced variations in the structural, optical, and electrical properties of Cu(In,Ga)Se2 thin films
The systematic variations in the structural, optical, and electrical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with Na doping level were investigated. Precise control of the NaExpand
  • 123
  • 1
  • PDF
CIGS solar cell with MBE-grown ZnS buffer layer
Abstract Cu(In 0.52 Ga 0.48 )Se 2 solar cell performance with an MBE-grown ZnS buffer layer was studied. It was found that cell performance with the ZnS buffer layer was inferior compared to thatExpand
  • 107
  • 1
Thickness study of Al:ZnO film for application as a window layer in Cu(In1−xGax)Se2 thin film solar cell
Structural, electrical and optical properties of Al doped ZnO (Al:ZnO) thin film of various thicknesses, grown by radio-frequency magnetron sputtering system were studied in relation to theExpand
  • 68
  • 1
Ellipsometric study of an organic template effect : H2Pc/PTCDA
Abstract A key prerequisite for fabricating opto-electronic devices with organic molecules is to control the molecular growth mode. In this work we present an ellipsometric study of the templatingExpand
  • 23
  • 1
  • PDF
Time-Resolved Microphotoluminescence Study of Cu(In,Ga)Se2
The carrier recombination processes in Cu(In1-x,Gax)Se2 (CIGS) thin films were investigated by time-resolved microscopic-photoluminescence (µ-PL) measurement at room temperature. For films with x =Expand
  • 19
  • 1
Impurities removal process for high-purity silica production from diatomite
Abstract This study presents a novel chemical process for the extraction of high purity silica from diatomite. The process involves leaching of raw diatomite with acid prior to alkali extraction,Expand
  • 5
  • 1
Energy band bending induced charge accumulation at fullerene/bathocuproine heterojunction interface
The electronic properties of fullerene (C60)/bathocuproine (BCP)/Ag heterostructures were studied as a function of the BCP layer thickness by photoemission spectroscopy. For the thin BCP layer, theExpand
  • 24
  • 1