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Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration
Abstract The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order toExpand
Epitaxial silicon devices for dosimetry applications
A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n+-p junction surrounded by a guard-ring structure implanted on an epitaxialExpand
Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide
The annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLExpand
Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon
Silicon samples of n-type have been implanted at room temperature with 5.6-MeV Si-28 ions to a dose of 2 x 10(8) cm(-2) and then annealed at temperatures from 100 to 380 degreesC. Both isothermal aExpand
Ion implantation range distributions in silicon carbide
The first to fourth order distribution moments, Rp, ΔRp, γ, and β, of 152 single energy 1H, 2H, 7Li, 11B, 14N, 16O, 27Al, 31P, 69Ga, and 75As implantations into silicon carbide (SiC) have beenExpand
Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide
Using deep level transient spectroscopy (DLTS), we have studied the energy position and thermal stability of deep levels in nitrogen doped 4H-SiC epitaxial layers after 1.2 MeV proton implantation ...
The influence of ion flux on defect production in MeV proton‐irradiated silicon
The production of stable vacancy‐related point defects in silicon irradiated with 1.3 MeV protons has been studied as a function of ion flux (protons s−1 cm−2), while keeping the total fluenceExpand
Identification of oxygen and zinc vacancy optical signals in ZnO
Photoluminescence spectroscopy has been used to study single crystalline ZnO samples systematically annealed in inert, Zn-rich and O-rich atmospheres. A striking correlation is observed between theExpand
Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations
Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defectsExpand
Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si
Deep-level transient spectroscopy studies of electronic defect levels in 7-MeV proton-irradiated n-type float-zone Si with a doping of (3-5)x10(12) cm(-3) and oxygen content of similarExpand
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