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Phosphor
Known as:
Phosphors
, Phosphur
A phosphor, most generally, is a substance that exhibits the phenomenon of luminescence. Somewhat confusingly, this includes both phosphorescent…
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Related topics
Related topics
50 relations
ADM-3A
Addressing scheme
Aluminized screen
Aperture grille
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication
Chang-Mi Lee
,
Chong Zhang
,
+7 authors
S. Denbaars
2015
Corpus ID: 28702239
We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was…
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2015
2015
The in fl uence of boric acid on improved persistent luminescence and thermal oxidation resistance of SrAl 2 O 4 : Eu 2 þ
Songhak Yoon
,
J. Bierwagen
,
+5 authors
S. Pokrant
2015
Corpus ID: 73559055
Persistent luminescence of SrAl2O4:Eu has attracted considerable attention due to their high initial brightness, long-lasting…
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2012
2012
Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy
Shun-Feng Li
,
Xue Wang
,
+13 authors
A. Hangleiter
2012
Corpus ID: 59426988
Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned…
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2012
2012
Breast Epithelial Antigens
R. Ceriani
Springer US
2012
Corpus ID: 34021304
D. H. Wreschner, I. Tsarfa1!' M. Hareuveni, J. Zaretsky, N. 1. Smorodinsky, M. Weiss Z S. Zriha~ M. Burstei~ J. Horev, P4 Kotkes…
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2003
2003
Pico Power - Lighting Lives with LEDs
S. Craine
,
W. Lawrance
,
D. Irvine-Halliday
2003
Corpus ID: 8200876
In the past 5 years, high brightness LEDs has begun to penetrate the lighting market. High brightness LEDs are attractive due to…
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1999
1999
AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding
R. Horng
,
D. Wuu
,
+5 authors
K. Lin
1999
Corpus ID: 121056106
An AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO2/Si mirror substrate has been fabricated using wafer bonding. The bonded…
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1997
1997
Co-combustion of E+E waste plastics in the TAMARA test plant
J. Vehlow
,
T. Wanke
,
B. Bergfeldt
,
F. Mark
1997
Corpus ID: 55931881
The co-combustion of different amounts of various plastic fractions of electrical and electronic (E+E) waste together with…
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1991
1991
Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy
Z. Sobiesierski
,
D. Woolf
,
D. Westwood
,
R. H. Williams
1991
Corpus ID: 39902790
Photoluminescence measurements have been used to characterize Si‐doped GaAs layers, ranging in thickness from 1.1–8.1 μm, grown…
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1967
1967
Die Phosphatbestimmung mit elektrischer Endpunktanzeige und ihre Anwendung zur Analyse organischer Substanzen. II
B. Griepink
,
J. Slanina
1967
Corpus ID: 98254896
ZusammenfassungNach Untersuchungen über die Einflüsse der Temperatur, organischer Lösungsmittel, und des Carbonatgehalts der L…
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1957
1957
Konzentration und Turnover der Adenosinund Guanosinphosphate sowie anderer säurelöslicher Phosphorverbindungen in Taubenerythrocyten
E. Gerlach
,
A. Fleckenstein
,
K. J. Freundt
Pflugers Archiv fur die gesamte Physiologie des…
1957
Corpus ID: 20229444
Die Erythrocyten yon V6geln stellen einen in mehrfacher I-Iinsicht bemerkenswerten Zell-Typ dar: Sie besitzen im Gegensatz zu den…
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