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Doping (semiconductor)

Known as: Doping, Chemical doping, Semiconductor doping 
In semiconductor production, doping intentionally introduces impurities into an extremely pure intrinsic semiconductor for the purpose of modulating… 
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Papers overview

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Highly Cited
2004
Highly Cited
2004
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Spiro-FPA, a novel blue emitter, in which two identical anthracene luminophores are linked orthogonally around a spirobifluorene… 
Highly Cited
1998
Highly Cited
1998
A wide range (y = 0.05-0.33) of Co-doped LiCo y Mn 2-y O 4 spinels were synthesized and electrochemically characterized. These Co… 
Highly Cited
1998
Highly Cited
1998
This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS… 
Highly Cited
1997
Highly Cited
1997
We have studied polyaniline and polyethylenedioxythiophene transparent electrodes for use as hole-injecting anodes in polymer… 
Highly Cited
1997
Highly Cited
1997
Impurity-free vacancy disordering (IFVD) using SiO/sub 2/ and SrF/sub 2/ dielectric caps to induce selective quantum-well (QW… 
Highly Cited
1994
Highly Cited
1994
Sol-gel-derived glasses have emerged as a new class of materials wells suited for the immobilization of biomolecules. As a… 
Highly Cited
1985
Highly Cited
1985
Ellipsometry was used to study the electrodeposition of polymer films formed by oxidation of bipyrazine, polyvinylferrocene, and… 
Highly Cited
1983
Highly Cited
1983
We present a theoretical calculation, within a continuum electron-phonon-coupled model, of the optical absorption due to polarons… 
Highly Cited
1970
Highly Cited
1970
The microwave properties of silicon Schottky-barrier field-effect transistor(MESFET'S) with a gate-length of one micrometer are…