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Doping (semiconductor)

Known as: Doping, Chemical doping, Semiconductor doping 
In semiconductor production, doping intentionally introduces impurities into an extremely pure intrinsic semiconductor for the purpose of modulating… 
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Related topics

Related topics

50 relations
Acceptor (semiconductors)Arrayed waveguide gratingBand bendingBismuth selenide

Broader (1)

Semiconductor device fabrication

Papers overview

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Highly Cited
2009
Highly Cited
2009
Phosphine-Oxide-Containing Bipolar Host Material for Blue Electrophosphorescent Devices
We report highly efficient blue electrophosphorescent organic light-emitting diodes (OLEDs) incorporating a bipolar host, 2,7-bis… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
1998
Highly Cited
1998
Dynamic spectral power equalization using micro-opto-mechanics
We present a voltage-controlled spectral attenuator for gain shaping and power equalization in wavelength division multiplexed… 
Highly Cited
1986
Highly Cited
1986
Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
We report enhancement- and depletion-mode p-channel modulation-doped field-effect transistors (FET's) in Si. Si/GexSi1… 
Highly Cited
1986
Highly Cited
1986
Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors
The physics of minority-carrier injection into polysilicon-contacted emitters has been studied through a series of experiments… 
Highly Cited
1985
Highly Cited
1985
Polymer Films on Electrodes XVI . In Situ Ellipsometric Measurements of Polybipyrazine, Polyaniline, and Polyvinylferrocene Films
Ellipsometry was used to study the electrodeposition of polymer films formed by oxidation of bipyrazine, polyvinylferrocene, and… 
Highly Cited
1981
Highly Cited
1981
Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys I . Defect Structure of Undoped and Copper Doped
Undoped crystals were subjected to high temperature equilibration at temperatures ranging from 400° to 655°C in various Hg… 
Highly Cited
1979
Highly Cited
1979
Bipolar transistor design for optimized power-delay logic circuits
This design optimization scheme provides a procedure for tailoring the impurity doping profile of the transistor so that the… 
Review
1975
Review
1975
Device physics of integrated injection logic
After a brief review of relevant device parameters, characterizing the inversely operating multicollector n-p-n transistor and… 
Highly Cited
1970
Highly Cited
1970
Microwave properties of Schottky-barrier field-effect transistors
The microwave properties of silicon Schottky-barrier field-effect transistor(MESFET'S) with a gate-length of one micrometer are… 
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