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Doping (semiconductor)

Known as: Doping, Chemical doping, Semiconductor doping 
In semiconductor production, doping intentionally introduces impurities into an extremely pure intrinsic semiconductor for the purpose of modulating… 
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Papers overview

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Highly Cited
2004
Highly Cited
2004
The high-temperature ferromagnetism in Co-doped ZnO samples fabricated by the standard solid-state reaction method is reported… 
Highly Cited
2004
Highly Cited
2004
We demonstrate a bulk process for the synthesis of Y-junction carbon nanotubes using Ti-doped Fe catalysts. It is shown that the… 
Highly Cited
2003
Highly Cited
2003
A novel scheme for all-optical serial-to-parallel conversion is proposed for label recognition of ultrafast burst optical packets… 
Highly Cited
2002
Highly Cited
2002
(0001)-oriented aluminum-doped zinc oxide films were prepared using a magnetron sputtering technique. High-resolution… 
Highly Cited
2002
Highly Cited
2002
Single-crystalline nanoribbons were used as substrates for the epitaxial growth of different functional thin films deposited by… 
Highly Cited
2000
Highly Cited
2000
The role of the inversion-layer centroid in a double-gate metal-oxide-semiconductor field-effect-transistor (DGMOSFET) has been… 
Highly Cited
1999
Highly Cited
1999
Changes in the optical absorption and the formation of point defects in three types of synthetic SiO2 glasses, wet (OH content… 
Highly Cited
1998
Highly Cited
1998
  • J. HeymanRoland KerstingKarl Unterrainer
  • 1998
  • Corpus ID: 121729945
We report time-domain measurements of electron intersubband oscillations in quantum wells. We use an interferometric technique to… 
Highly Cited
1993
Highly Cited
1993
It is a long‐standing puzzle that ZnSe is difficult to dope p type, while ZnTe—which is very similar to ZnSe—is very easily doped… 
Highly Cited
1985
Highly Cited
1985
Des particules spheroidales monodispersees de zircone et de zircone stabilisee par Y 2 O 3 , d'un diametre moyen de 0,2 μm, ont…