Skip to search formSkip to main contentSkip to account menu

Band bending

Known as: Band-bending 
Band bending refers to the local changes in the energy offset of a semiconductor's band structure near a junction, due to space charge effects… 
Wikipedia (opens in a new tab)

Related topics

Related topics

12 relations
Anderson's ruleDepletion regionDoping (semiconductor)Electronic band structure

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Ti nanoparticles decorated ZnO nanowires heterostructure: photocurrent and photoluminescence properties
In this work, we have investigated the effect of Ti nanoparticles (NPs) decoration on the photoluminescence (PL) and… 
Review
2013
Review
2013
Quantum confinement in oxide quantum wells
Quantum wells created from nanostructured transition metal oxides offer unique possibilities for creating and manipulating… 
2009
2009
Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers
The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have… 
2008
2008
Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs
Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the ballistic transport regime have been performed… 
2008
2008
Influence of the front contact barrier height on the Indium Tin Oxide/ hydrogenated p-doped amorphous silicon heterojunction solar cells
Highly Cited
2007
Highly Cited
2007
Ordered Vacancy Compounds and Nanotube Formation in CuInSe2-CdS Core-Shell Nanowires
CuInSe2 related materials-based heterojunction diodes have received much attention, owing to their highest power conversion… 
2005
2005
Surface recombination currents in "Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs
Surface recombination effects are studied in non-passivated non-self-aligned and self-aligned NpN InP-GaAsSb-InP double… 
2004
2004
The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices
2003
2003
Passivation and reconstruction-dependent electron accumulation at sulphur treated InAs( 0 0 1 ) surfaces
1996
1996
Atomic‐scale structure and electronic properties of GaN/GaAs superlattices
We have investigated the atomic‐scale structure and electronic properties of GaN/GaAs superlattices produced by nitridation of a… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)