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Band bending
Known as:
Band-bending
Band bending refers to the local changes in the energy offset of a semiconductor's band structure near a junction, due to space charge effects…
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Related topics
Related topics
12 relations
Anderson's rule
Depletion region
Doping (semiconductor)
Electronic band structure
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Papers overview
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2019
2019
Learning to measure resistance noise demystifies the ubiquitous 1/f excess noise
J. Izpura
2019
Corpus ID: 119412303
To study resistance noise (DeltaR) by a spectrum analyzer we must convert this noise into a noise voltage (DeltaV) at the reach…
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2017
2017
Analysis of electrical and thermal stress effects on PCBM:P3HT solar cells by photocurrent and impedance spectroscopy modeling
Lorenzo Torto
,
A. Rizzo
,
+5 authors
S. Gevorgyan
IEEE International Reliability Physics Symposium
2017
Corpus ID: 27011697
We investigated the effects of electrical stress and thermal storage by means of photocurrent, Impedance Spectroscopy and Open…
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2017
2017
Intrinsic Fermi Level and Charged Intrinsic Defects Density in Doped Semiconductors from the Band offsets of MIS Device Interfaces
D. R. K. Chanana
2017
Corpus ID: 189808485
Intrinsic Fermi level and charged intrinsic defect density in doped semiconductors has been calculated by a new method proposed…
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2013
2013
Growth and Characterization of ZnO Nanocrystals
L. Ericsson
2013
Corpus ID: 53680676
The understanding of surfaces of materials is of crucial importance to all of us. Considering nanocrystals (NCs), that have a…
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2013
2013
Surface Electronic Structure of BaZr 1x Y x O 3-δ by Soft-X-Ray Spectroscopy
T. Higuchi
,
F. Iguchi
,
+5 authors
H. Yugami
2013
Corpus ID: 96458672
Tohru Higuchi, Fumitada Iguchi, Yuki Nagao, Noriko Sata, Yi-Sheng Liu, Per-Anders Glans, Jinghua Guo and Hiroo Yugami 1…
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2012
2012
MEBT2 PHYSICS DESIGN FOR THE C-ADS LINAC
Zhen Guo
,
H. Geng
,
Jingyu Tang
,
Zhi-Hui Li
2012
Corpus ID: 110100906
The C-ADS linac is composed of two parallel injectors and a main linac, a section of Medium Energy Beam Transport (MEBT2) is…
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2004
2004
Control of surface morphology in photoelectrochemical etching of GaN
Bo-Zhong Yang
,
P. Fay
2004
Corpus ID: 138506583
Several mechanisms for morphology control in PEC etching have been investigated. The dependence of surface morphology on…
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2003
2003
CdTe Back Contact: Response to Copper Addition and Out-Diffusion
C. Jenkins
,
A. Pudov
,
M. Gloeckler
,
S. Demtsu
,
T. Nagle
,
A. Fahrenbruch
2003
Corpus ID: 138995968
The back-contact barrier of CdTe solar cells plays an important role in cell operation, and it is substantially altered by both…
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1997
1997
Impact Of Trench Sidewall Interface Trap In Shallow Trench Isolation On Junction Leakage Current Characteristics For Sub-0.25 /spl mu/m CMOS Devices
Inaba
,
Takahashi
,
Okayama
,
Yagishita
,
Matsuoka
,
Ishiuchi
Symposium on VLSI Technology
1997
Corpus ID: 40798295
A methodology of direct characterization of interface traps in trench sidewall in STI structure is presented for the first time…
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1987
1987
Semiconductor materials for liquid electrolyte solar cells
B. Scrosati
1987
Corpus ID: 62836260
Abstract